C. H. Chern

463 total citations
15 papers, 310 citations indexed

About

C. H. Chern is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, C. H. Chern has authored 15 papers receiving a total of 310 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in C. H. Chern's work include Semiconductor Quantum Structures and Devices (7 papers), Silicon Nanostructures and Photoluminescence (7 papers) and Photonic and Optical Devices (6 papers). C. H. Chern is often cited by papers focused on Semiconductor Quantum Structures and Devices (7 papers), Silicon Nanostructures and Photoluminescence (7 papers) and Photonic and Optical Devices (6 papers). C. H. Chern collaborates with scholars based in United States, Taiwan and United Kingdom. C. H. Chern's co-authors include R. P. G. Karunasiri, Fu-Lung Hsueh, K. L. Wang, Chih-Chang Lin, F.-W. Yao, H.C. Tuan, Kevin J. Chen, Jialong Yu, Gang Bai and Yih‐Jyh Lin and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

C. H. Chern

14 papers receiving 301 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C. H. Chern United States	9	267	112	97	71	40	15	310
R. Oberhuber Germany	5	279 1.0×	93 0.8×	105 1.1×	60 0.8×	66 1.6×	11	362
A. F. Basile Canada	10	282 1.1×	136 1.2×	100 1.0×	48 0.7×	52 1.3×	30	318
D.B. Slater United States	11	261 1.0×	146 1.3×	135 1.4×	60 0.8×	55 1.4×	23	349
Hans Rohdin United States	11	345 1.3×	202 1.8×	105 1.1×	35 0.5×	23 0.6×	26	371
Masaaki Tomizawa Japan	10	307 1.1×	196 1.8×	96 1.0×	48 0.7×	62 1.6×	27	389
D. Wheeler United States	8	178 0.7×	84 0.8×	87 0.9×	67 0.9×	44 1.1×	9	215
L. Witkowski United States	11	371 1.4×	203 1.8×	165 1.7×	71 1.0×	52 1.3×	28	427
Manabu Arai Japan	11	282 1.1×	68 0.6×	85 0.9×	45 0.6×	38 0.9×	35	312
Mitsuhiro Kushibe Japan	11	354 1.3×	164 1.5×	37 0.4×	42 0.6×	40 1.0×	32	376

Countries citing papers authored by C. H. Chern

Since Specialization

Citations

This map shows the geographic impact of C. H. Chern's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. H. Chern with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. H. Chern more than expected).

Fields of papers citing papers by C. H. Chern

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. H. Chern. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. H. Chern. The network helps show where C. H. Chern may publish in the future.

Co-authorship network of co-authors of C. H. Chern

This figure shows the co-authorship network connecting the top 25 collaborators of C. H. Chern. A scholar is included among the top collaborators of C. H. Chern based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. H. Chern. C. H. Chern is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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15 of 15 papers shown

Tang, Gaofei, Risheng Su, F.-W. Yao, et al.. (2018). High-Capacitance-Density ${p}$ -GaN Gate Capacitors for High-Frequency Power Integration. IEEE Electron Device Letters. 39(9). 1362–1365. 34 indexed citations

Tang, Gaofei, Zhaofu Zhang, Jiabei He, et al.. (2018). High-speed, high-reliability GaN power device with integrated gate driver. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 76–79. 66 indexed citations

Chern, C. H., et al.. (2014). 8.4 A 28Gb/s 1pJ/b shared-inductor optical receiver with 56% chip-area reduction in 28nm CMOS. 144–145. 47 indexed citations

Chung, Shyh‐Jong, et al.. (2012). A 2.7GHz 3.9mW Mesh-BJT LC-VCO with −204dBc/Hz FOM in 65nm CMOS. 1–4. 5 indexed citations

Alavi, M., Steve Jacobs, Shamsuddin Ahmed, C. H. Chern, & Peter K. McGregor. (1997). Effect Of MOS Device Scaling On Process Induced Gate Charging. 7–10. 23 indexed citations

Bai, Gang, et al.. (1994). Strain relief of metastable GeSi layers on Si(100). Journal of Applied Physics. 75(9). 4475–4481. 21 indexed citations

Glaser, E. R., T. A. Kennedy, D. J. Godbey, et al.. (1993). Photoluminescence and optically detected magnetic resonance of Si/Si1−xGexstrained-layer superlattices grown by molecular-beam epitaxy. Physical review. B, Condensed matter. 47(3). 1305–1315. 22 indexed citations

Chern, C. H., et al.. (1992). Resonant magnetotunneling of GexSi1−x resonant tunneling structures grown at extremely low temperature by molecular-beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(2). 937–939. 8 indexed citations

Khorram, S., C. H. Chern, & K. L. Wang. (1991). Measurement of Valence Band Offset in Strained Ge_xSi_1−x/Si Heterojunctions. MRS Proceedings. 220. 7 indexed citations

10.

Bai, Gang, et al.. (1991). Wet Oxidation of Epitaxial Ge_.36Si_.64 on (100)Si. MRS Proceedings. 220. 8 indexed citations

11.

Chern, C. H., K. L. Wang, Gang Bai, & M.−A. Nicolet. (1991). Very Thick Coherently Strained Ge_xSi_1−x Layers Grown in a Narrow Temperature Window. MRS Proceedings. 220. 6 indexed citations

12.

Karunasiri, R. P. G., et al.. (1989). Si/Ge(x)Si(1-x)/Si resonant tunneling diode doped by thermal boron source. Journal of Vacuum Science and Technology. 7. 327–331.

13.

Wang, K.L., et al.. (1989). Resonant tunneling of variously strained Si/GexSi1−x/Si heterostructures. Superlattices and Microstructures. 5(2). 201–206. 26 indexed citations

14.

Karunasiri, R. P. G., et al.. (1989). Si/GexSi1−x/Si resonant tunneling diode doped by thermal boron source. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 7(2). 327–331. 14 indexed citations

15.

Karunasiri, R. P. G., et al.. (1989). Hole transport through minibands of a symmetrically strained GexSi1−x/Si superlattice. Applied Physics Letters. 54(16). 1564–1566. 23 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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