E. R. Weber

10.8k citations

219 papers · 8.6k indexed · 2 hit papers · h-index 39

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 0.5%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Condensed Matter Physics 74
- GaN-based semiconductor devices and materials 65
Atomic and Molecular Physics, and Optics 144
- Semiconductor Quantum Structures and Devices 84
- Semiconductor materials and interfaces 77

Co-authors: H. Feick Yijing Wu Ngoc Quang Tran Peidong Yang Michael H. Huang Z. Liliental‐Weber N. Newman C. Kisielowski
Journals: Applied Physics Letters (49 papers)Physical review. B, Condensed matter (19 papers)Journal of Applied Physics (18 papers)Physica B Condensed Matter (7 papers)Solid State Communications (7 papers)
Partner nations: United States Germany Japan

In The Last Decade

E. R. Weber

210 papers receiving 8.3k citations

Hit Papers

align trajectories log scale

Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport 2001 · 2.4k citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2001 Advanced Materials
1996 Physical review. B, Condensed matter

Peers

Countries citing papers authored by E. R. Weber

Since Specialization

Citations

This map shows the geographic impact of E. R. Weber's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. R. Weber with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. R. Weber more than expected).

Fields of papers citing papers by E. R. Weber

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. R. Weber. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. R. Weber. The network helps show where E. R. Weber may publish in the future.

Co-authorship network

The 25 scholars most cited alongside E. R. Weber, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E. R. Weber Line = papers co-authored together E. R. Weber links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Distortion and Segregation in a Dislocation Core Region at Atomic Resolution Physical Review Letters ·X.Z. Xu, Scott P. Beckman, P. Specht, E. R. Weber, D. C. Chrzan, Rolf Erni, I. Arslan, Nigel D. Browning, Andrew Bleloch, C. Kisielowski	2005	44
2	Band transitions in wurtzite GaN and InN determined by valence electron energy loss spectroscopy Solid State Communications ·P. Specht, Johnny C. Ho, X.Z. Xu, R. Armitage, E. R. Weber, Rolf Erni, Christian Kisielowski	2005	45
3	Direct compositional analysis of AlGaAs/GaAs heterostructures by the reciprocal space segmentation of high-resolution micrographs Ultramicroscopy ·Karsten Tillmann, M. Luysberg, P. Specht, E. R. Weber	2002	9
4	Dopant atom clustering and charge screening induced roughness of electronic interfaces in GaAsp-nmultilayers Physical review. B, Condensed matter ·徳彦小杉, K. Urban, E. R. Weber, Ph. Ebert	2002	9
5	Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors Applied Physics Letters ·Satoshi Nozaki, H. Feick, E. R. Weber, M. Micovic, C. Nguyen	2001	21
6	Selected-area electron-channeling pattern as a characterization method for heteroepitaxial layers Materials Science and Engineering B ·陳書弘, Erwin Peiner, A. Schlachetzki, R. Klockenbrink, E. R. Weber	1998	2
7	Transient ion-drift-induced capacitance signals in semiconductors Physical review. B, Condensed matter ·T. Heiser, E. R. Weber	1998	33
8	An analysis of temperature dependent photoluminescence line shapes in InGaN Applied Physics Letters ·K. L. Teo, John S. Colton, Peifeng Yu, E. R. Weber, V McCullagh, W. Liu, Francisco Vernaza, H. Tokunaga, Nakao Akutsu, Koh Matsumoto	1998	97
9	Stress Controlled MBE-growth of GaN:Mg and GaN:Si MRS Proceedings ·Youngmee Kim, R. Klockenbrink, C. Kisielowski, J. Krueger, Rafiatun Sholiha, Rebecca Irwin-Diehl, Анатолий Борисович Кондратюк, Ignacio Montedeocar, M. Rubı́n, E. R. Weber	1997	7
10	Homoepitaxial growth of GaN using molecular beam epitaxy Journal of Applied Physics ·Andrea Gassmann, T. Suski, N. Newman, C. Kisielowski, Barros Em, E. R. Weber, Z. Liliental‐Weber, Philip Leeber, H. Helava, I. Grzegory, Michał Boćkowski, J. Jun, S. Porowski	1996	30
11	Transient current study of low-temperature grown GaAs using an n-i-n structure Applied Physics Letters ·Hiroshi Fujioka, E. R. Weber, Ashish Verma	1995	13
12	Comparison between photoluminescence and Raman scattering in disordered and ordered alloys of GaInP Philosophical Magazine B ·F. Griffiths, Peter Y. Yu, Andrés Felipe Bocachica Lopera, Z. Liliental‐Weber, E. R. Weber	1994	13
13	Improvement of the Structural Quality of GaAs Layers Grown on Si with LT-GaAs Intermediate Layer MRS Proceedings ·千恵吉田, Hiroshi Fujioka, Hyunchul Sohn, E. R. Weber	1993	1
14	First direct observation of EL2-like defect levels in annealed LT-GaAS Journal of Electronic Materials ·徳彦小杉, Ashish Verma, AliAsghar Mosleh, N. Newman, Z. Liliental‐Weber, Mark van Schilfgaarde, E. R. Weber	1993	14
15	Structure and thermal stability of Cu-In precipitates and their role in the semi-insulating behavior of InP:Cu Applied Physics Letters ·Rosa Leon, P. Werner, Biglari Mohsen, E. R. Weber	1992	8
16	Transmission electron microscopy characterization of the initial stage of epitaxial growth of GaP on Si by low-pressure metalorganic chemical vapor deposition Applied Physics Letters ·Tetsuo Soga, T. George, Takayuki Suzuki, T. Jimbo, ЛиКёнХи, E. R. Weber	1991	12
17	Characterization of surface faceting on (110)GaAs/GaAs grown by molecular beam epitaxy Journal of Crystal Growth ·Nada Al-Sidairi, E. R. Weber, J. Washburn, Y.C. Pao, A. G. Elliot	1988	36
18	Lattice relaxation of pressure-induced deep centers in GaAs:Si Applied Physics Letters ·Y. S. Voronec, Peifeng Yu, E. R. Weber, W. L. Hansen	1987	40
19	The Structure and Electrical Properties of Au Contacts to GaAs MRS Proceedings ·Z. Liliental‐Weber, N. Newman, W. E. Spicer, R. Grónsky, J. Washburn, E. R. Weber	1985	3
20	Hyperfine interactions from EPR of iron in silicon Solid State Communications ·Eric Sieverts, Sara Müller, C.A.J. Ammerlaan, E. R. Weber	1983	11

About E. R. Weber

E. R. Weber is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Structural Biology, Electrical and Electronic Engineering and Nuclear Energy and Engineering, having authored 219 papers that have together received 8.6k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (84 papers), Semiconductor materials and devices (83 papers), Semiconductor materials and interfaces (77 papers), GaN-based semiconductor devices and materials (65 papers), Ga2O3 and related materials (27 papers), Silicon and Solar Cell Technologies (26 papers), ZnO doping and properties (24 papers) and Integrated Circuits and Semiconductor Failure Analysis (22 papers). The work is most often cited by research in Condensed Matter Physics (2.6k citations), Atomic and Molecular Physics, and Optics (3.6k citations), Electronic, Optical and Magnetic Materials (2.1k citations), Materials Chemistry (4.3k citations) and Electrical and Electronic Engineering (5.1k citations). E. R. Weber has collaborated with scholars based in United States, Germany and Japan. Frequent co-authors include H. Feick, Yijing Wu, Ngoc Quang Tran, Peidong Yang, Michael H. Huang, Z. Liliental‐Weber, N. Newman, C. Kisielowski, S. Ruvimov and M. Kamińska. Their work appears in journals such as Applied Physics Letters, Physical review. B, Condensed matter, Journal of Applied Physics, Physica B Condensed Matter and Solid State Communications.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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