C. E. Stutz

3.1k citations

130 papers · 2.5k indexed · h-index 26

Atomic and Molecular Physics, and Optics top 1%
- Semiconductor Quantum Structures and Devices 96
- Quantum and electron transport phenomena 49
- Semiconductor materials and interfaces 15
Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 18
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 54
- Advanced Semiconductor Detectors and Materials 20
- Semiconductor Lasers and Optical Devices 13
- Advancements in Semiconductor Devices and Circuit Design 13
Electronic, Optical and Magnetic Materials top 10%
Materials Chemistry top 5%

Co-authors: K. R. Evans M. O. Manasreh D. C. Look J. R. Sizelove P. W. Yu H. J. Lü W. J. Schaff L.F. Eastman
Cited by: Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering
Journals: Physical review. B, Condensed matter (31 papers)Applied Physics Letters (24 papers)Journal of Applied Physics (16 papers)
Partner nations: United States France Australia

In The Last Decade

C. E. Stutz

122 papers receiving 2.5k citations

Peers

Countries citing papers authored by C. E. Stutz

Since Specialization

Citations

This map shows the geographic impact of C. E. Stutz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. E. Stutz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. E. Stutz more than expected).

Fields of papers citing papers by C. E. Stutz

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. E. Stutz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. E. Stutz. The network helps show where C. E. Stutz may publish in the future.

Co-authorship network

The 25 scholars most cited alongside C. E. Stutz, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. E. Stutz Line = papers co-authored together C. E. Stutz links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Tunable stoichiometry of SiO x - BaTiO y - BO z fabricated by multitarget pulsed laser deposition Journal of Nanophotonics ·John G. Jones,Jonathan T. Goldstein,Steven R. Smith,B. Rus,Lawrence Grazulis,Gilles Mouëllic,Neil R. Murphy,Gregory Kozlowski,Rachel Jakubiak,C. E. Stutz	2015	3
2	Introduction to the Special Issue on THz Materials, Devices, and Applications IEEE Journal of Selected Topics in Quantum Electronics ·Yu‐Jie Ding,Qing Hu,Martín Koch,C. E. Stutz	2008	6
3	Surface charge accumulation of InN films grown by molecular-beam epitaxy Applied Physics Letters ·H. J. Lü,W. J. Schaff,L.F. Eastman,C. E. Stutz	2003	247
4	Observation of free and bound excitons associated with the two-dimensional electron gas in modulation-doped heterostructures Physical review. B, Condensed matter ·D. C. Reynolds,D. C. Look,B. Jogai,C. E. Stutz	1994	2
5	Deep traps in molecular-beam-epitaxial GaAs grown at low temperatures Journal of Applied Physics ·D. C. Look,Z.-Q. Fang,Hideki Yamamoto,J. R. Sizelove,M. G. Mier,C. E. Stutz	1994	27
6	Resonant coupling of orbital angular momentum components in the barrier with analogous components in the well in InxGa1−xAs-GaAs quantum wells Applied Physics Letters ·D. C. Reynolds,B. Jogai,P. W. Yu,K. R. Evans,C. E. Stutz	1994	4
7	Radiative recombination at theAlxGa1−xAs-GaAs heterostructure interface by two-dimensional excitons Physical review. B, Condensed matter ·D. C. Reynolds,D. C. Look,B. Jogai,P. W. Yu,K. R. Evans,C. E. Stutz,Jeffrey Kucinski	1994	9
8	0.8-eV photoluminescence of GaAs grown by molecular-beam epitaxy at low temperatures Physical review. B, Condensed matter ·P. W. Yu,G. D. Robinson,J. R. Sizelove,C. E. Stutz	1994	36
9	Electrochemical capacitance-voltage analysis of delta-doped pseudomorphic high electron mobility transistor material Applied Physics Letters ·C. E. Stutz,B. Jogai,D. C. Look,J. M. Ballingall,T. J. Rogers	1994	9
10	Electrical properties of molecular beam epitaxial GaAs grown at 300–450°C Journal of Electronic Materials ·D. C. Look,G. D. Robinson,J. R. Sizelove,C. E. Stutz	1993	14
11	GaAs/sub x/Sb/sub 1-x//In/sub y/Al/sub 1-y/As p-channel heterostructure FETs with high transconductance and low gate leakage current IEEE Electron Device Letters ·N. Christou,Tatsiana Ushakova,C. E. Stutz	1993	6
12	Effects of heat treatment on the 0.8 eV photoluminescence emission in GaAs grown by molecular beam epitaxy at low temperatures Journal of Electronic Materials ·P. W. Yu,C. E. Stutz	1993	13
13	Incorporation rate variation at heterointerfaces during III–V molecular beam epitaxy Applied Surface Science ·K. R. Evans,C. E. Stutz,展行鳥越,弘幸小野村	1992	6
14	Low-temperature characterization of high-current-gain graded-emitter AlGaAs/GaAs narrow-base heterojunction bipolar transistor IEEE Electron Device Letters ·K. Ikossi‐Anastasiou,實入澤,K. R. Evans,C. E. Stutz	1992	14
15	Anomalous behavior of cyclotron resonance in GaAs/Al0.28Ga0.72As high-electron-mobility transistor structures Physical review. B, Condensed matter ·M. O. Manasreh,G Stevan,K. R. Evans,C. E. Stutz	1991	11
16	Surface and interface free-carrier depletion in GaAs molecular beam epitaxial layers: Demonstration of high interface charge Applied Physics Letters ·D. C. Look,C. E. Stutz,K. R. Evans	1990	16
17	Electrical and structural study of partially relaxed Ga0.92In0.08As(p+)/ GaAs(n) diodes Journal of Applied Physics ·Isha N Kedia,C. R. Wie,K. R. Evans,C. E. Stutz	1990	10
18	New Equivalent-Circuit Model for Resonant Tunneling Diodes E. R. Brown,C. D. Parker,T. C. L. G. Sollner,C.I. Huang,C. E. Stutz	1989	1
19	Raman scattering studies of reactive ion-etched MBE IEEE Journal of Quantum Electronics ·P.T. Branagan,Howard E. Jackson,A Revil,T. D. Mantéi,Aurel Septian Kurniawan,C. E. Stutz,K. R. Evans,Lawrence Master	1989	5
20	Extrinsic contributions to photoreflectance ofAlxGa1−xAs/GaAs quantum wells: An investigation of the ‘‘donor-related’’ feature Physical review. B, Condensed matter ·W. M. Theis,G. D. Sanders,K. R. Evans,L.L. Liou,В. В. Киселев,K. K. Bajaj,C. E. Stutz,Robert Jones,Yia‐Chung Chang	1989	8

About C. E. Stutz

C. E. Stutz is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Electrical and Electronic Engineering, having authored 130 papers that have together received 2.5k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (96 papers), Semiconductor materials and devices (54 papers), Quantum and electron transport phenomena (49 papers), Advanced Semiconductor Detectors and Materials (20 papers), GaN-based semiconductor devices and materials (18 papers), Semiconductor materials and interfaces (15 papers), Semiconductor Lasers and Optical Devices (13 papers) and Advancements in Semiconductor Devices and Circuit Design (13 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (1.8k citations), Condensed Matter Physics (650 citations) and Electrical and Electronic Engineering (1.6k citations). C. E. Stutz has collaborated with scholars based in United States, France and Australia. Frequent co-authors include K. R. Evans, M. O. Manasreh, D. C. Look, J. R. Sizelove, D. C. Look, K. R. Evans, P. W. Yu, H. J. Lü, W. J. Schaff and L.F. Eastman. Their work appears in journals such as Physical review. B, Condensed matter, Applied Physics Letters, Journal of Applied Physics, Journal of Electronic Materials and Superlattices and Microstructures.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact