H. Feick

13.4k total citations · 2 hit papers
48 papers, 11.2k citations indexed

About

H. Feick is a scholar working on Electrical and Electronic Engineering, Nuclear and High Energy Physics and Condensed Matter Physics. According to data from OpenAlex, H. Feick has authored 48 papers receiving a total of 11.2k indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 18 papers in Nuclear and High Energy Physics and 16 papers in Condensed Matter Physics. Recurrent topics in H. Feick's work include Particle Detector Development and Performance (18 papers), Silicon and Solar Cell Technologies (17 papers) and GaN-based semiconductor devices and materials (16 papers). H. Feick is often cited by papers focused on Particle Detector Development and Performance (18 papers), Silicon and Solar Cell Technologies (17 papers) and GaN-based semiconductor devices and materials (16 papers). H. Feick collaborates with scholars based in United States, Germany and Switzerland. H. Feick's co-authors include Michael H. Huang, Peidong Yang, Eicke R. Weber, Yiying Wu, Richard E. Russo, Samuel S. Mao, Haoquan Yan, Hannes Kind, E. R. Weber and Yijing Wu and has published in prestigious journals such as Science, Physical Review Letters and Advanced Materials.

In The Last Decade

H. Feick

47 papers receiving 11.0k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Room-Temperature Ultraviolet Nanowire Nanolasers

2001 8.0k citations Michael H. Huang, Samuel S. Mao et al. Science profile →
Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport

2001 2.4k citations Michael H. Huang, Yijing Wu et al. Advanced Materials profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
H. Feick United States	18	9.1k	6.7k	3.6k	2.5k	922	48	11.2k
C. H. A. Huan Singapore	50	6.1k 0.7×	5.0k 0.7×	1.6k 0.4×	1.2k 0.5×	458 0.5×	261	8.7k
Weimin Du China	42	3.0k 0.3×	2.9k 0.4×	2.3k 0.6×	685 0.3×	434 0.5×	144	5.6k
Guanghou Wang China	48	6.4k 0.7×	2.8k 0.4×	1.8k 0.5×	1.3k 0.5×	762 0.8×	301	8.8k
Eicke R. Weber United States	29	7.7k 0.8×	7.6k 1.1×	3.0k 0.8×	2.3k 0.9×	1.2k 1.3×	118	12.0k
Christopher M. Rouleau United States	53	8.4k 0.9×	5.0k 0.7×	1.9k 0.5×	1.5k 0.6×	575 0.6×	181	10.8k
Pushan Ayyub India	39	3.5k 0.4×	1.5k 0.2×	1.2k 0.3×	907 0.4×	740 0.8×	158	5.4k
A. Vantomme Belgium	42	4.6k 0.5×	4.5k 0.7×	1.7k 0.5×	1.1k 0.4×	1.4k 1.6×	429	8.4k
J. Voigt Germany	22	5.8k 0.6×	3.5k 0.5×	3.0k 0.8×	641 0.3×	572 0.6×	92	6.8k
G. Hollinger France	42	3.9k 0.4×	5.7k 0.9×	798 0.2×	858 0.3×	296 0.3×	168	7.9k
M. S. Dresselhaus United States	50	9.3k 1.0×	2.8k 0.4×	1.0k 0.3×	1.6k 0.6×	403 0.4×	136	11.1k

Countries citing papers authored by H. Feick

Since Specialization

Citations

This map shows the geographic impact of H. Feick's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Feick with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Feick more than expected).

Fields of papers citing papers by H. Feick

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Feick. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Feick. The network helps show where H. Feick may publish in the future.

Co-authorship network of co-authors of H. Feick

This figure shows the co-authorship network connecting the top 25 collaborators of H. Feick. A scholar is included among the top collaborators of H. Feick based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Feick. H. Feick is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Feick, H., et al.. (2020). Modeling OFF-state harmonics in MOS transistors used as RF switches. Solid-State Electronics. 173. 107872–107872. 2 indexed citations

Schneider, Jens, et al.. (2013). 3D lithography for implant applications. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8683. 86831P–86831P. 1 indexed citations

Yang, Qing, H. Feick, & E. R. Weber. (2006). Defects related to N-sublattice damage in electron irradiated GaN. Physica B Condensed Matter. 376-377. 447–450. 3 indexed citations

Yang, Qing, H. Feick, & Eicke R. Weber. (2003). Observation of a hydrogenic donor in the luminescence of electron-irradiated GaN. Applied Physics Letters. 82(18). 3002–3004. 30 indexed citations

Yang, Qing, H. Feick, R. Armitage, & E. R. Weber. (2003). Metastability in the excitonic luminescence of electron‐irradiated GaN. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2712–2715. 1 indexed citations

Armitage, R., et al.. (2002). Optical and electrical properties of semi-insulating GaN:C grown by MBE. MRS Proceedings. 743. 3 indexed citations

Yang, Qing, et al.. (2002). Electrical and Optical Properties of Carbon-Doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl₄ Dopant Source. MRS Proceedings. 719. 11 indexed citations

Armitage, R., Qing Yang, H. Feick, et al.. (2002). Lattice-matched HfN buffer layers for epitaxy of GaN on Si. Applied Physics Letters. 81(8). 1450–1452. 55 indexed citations

Davydov, V. Yu., A. A. Klochikhin, V. V. Emtsev, et al.. (2002). <title>Bandgap of hexagonal InN and InGaN alloys</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 68–71. 5 indexed citations

10.

Shapiro, Noad A., H. Feick, Nathan F. Gardner, et al.. (2001). Relation between Structural Parameters and the Effective Electron-Hole Separation in InGaN/GaN Quantum Wells. physica status solidi (b). 228(1). 147–151. 1 indexed citations

11.

Huang, Michael H., Yijing Wu, H. Feick, et al.. (2001). Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport. Advanced Materials. 13(2). 113–116. 2376 indexed citations breakdown →

12.

Huang, Michael H., et al.. (2001). ChemInform Abstract: Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport.. ChemInform. 32(18). 1 indexed citations

13.

Nozaki, Satoshi, H. Feick, E. R. Weber, M. Micovic, & C. Nguyen. (2001). Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors. Applied Physics Letters. 78(19). 2896–2898. 21 indexed citations

14.

Huang, Michael H., Samuel S. Mao, H. Feick, et al.. (2001). Room-Temperature Ultraviolet Nanowire Nanolasers. Science. 292(5523). 1897–1899. 7968 indexed citations breakdown →

15.

Flink, C., H. Feick, Scott A. McHugo, et al.. (2000). Out-Diffusion and Precipitation of Copper in Silicon: An Electrostatic Model. Physical Review Letters. 85(23). 4900–4903. 55 indexed citations

16.

Fretwurst, E., et al.. (1997). Investigation of damage-induced defects in silicon by TCT. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 388(3). 356–360. 34 indexed citations

17.

Feick, H., E. Fretwurst, M. Moll, & G. Lindström. (1997). Correlation of radiation damage effects in high resistivity silicon detectors with results from deep level spectroscopy. IEEE Transactions on Nuclear Science. 44(3). 825–833. 7 indexed citations

18.

Bates, Samantha, C. Furetta, M. Gläser, et al.. (1996). Pion-induced damage in silicon detectors. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 379(1). 116–123. 18 indexed citations

19.

Li, Z., G. Ghislotti, H.W. Kraner, et al.. (1996). Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7/spl times/10/sup 15/ n/cm/sup 2/. IEEE Transactions on Nuclear Science. 43(3). 1590–1598. 19 indexed citations

20.

Chilingarov, A., H. Feick, E. Fretwurst, et al.. (1995). Radiation studies and operational projections for silicon in the ATLAS inner detector. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 360(1-2). 432–437. 78 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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