R. W. Ryan

666 total citations
31 papers, 510 citations indexed

About

R. W. Ryan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, R. W. Ryan has authored 31 papers receiving a total of 510 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 6 papers in Condensed Matter Physics. Recurrent topics in R. W. Ryan's work include Semiconductor materials and devices (15 papers), Semiconductor Quantum Structures and Devices (13 papers) and Semiconductor materials and interfaces (7 papers). R. W. Ryan is often cited by papers focused on Semiconductor materials and devices (15 papers), Semiconductor Quantum Structures and Devices (13 papers) and Semiconductor materials and interfaces (7 papers). R. W. Ryan collaborates with scholars based in United States, Germany and United Kingdom. R. W. Ryan's co-authors include R. J. Malik, E. Fred Schubert, John F. Walker, Don S. Richards, R. A. Hamm, Raymond E. March, L.M. Lunardi, Roman Szücs, Pat Sandra and Roberto Alzaga and has published in prestigious journals such as Applied Physics Letters, Analytical Chemistry and The Journal of Organic Chemistry.

In The Last Decade

R. W. Ryan

30 papers receiving 482 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. W. Ryan United States 13 336 243 64 62 62 31 510
P. Friedel France 16 309 0.9× 209 0.9× 64 1.0× 63 1.0× 112 1.8× 33 760
C. Schelling Austria 11 141 0.4× 185 0.8× 54 0.8× 70 1.1× 99 1.6× 28 464
M.W. Dvorak Canada 19 486 1.4× 351 1.4× 31 0.5× 103 1.7× 296 4.8× 48 857
Toshiro Hayakawa Japan 14 406 1.2× 451 1.9× 56 0.9× 43 0.7× 85 1.4× 61 778
Rulin Wang China 10 103 0.3× 95 0.4× 35 0.5× 35 0.6× 27 0.4× 37 372
Cristian Rojas Ecuador 14 52 0.2× 92 0.4× 57 0.9× 66 1.1× 160 2.6× 48 524
Min Jia China 14 81 0.2× 179 0.7× 53 0.8× 25 0.4× 51 0.8× 58 601
B. Wiedemann Germany 11 115 0.3× 119 0.5× 78 1.2× 9 0.1× 367 5.9× 27 668
H. J. Kang South Korea 13 286 0.9× 89 0.4× 18 0.3× 10 0.2× 37 0.6× 45 498

Countries citing papers authored by R. W. Ryan

Since Specialization
Citations

This map shows the geographic impact of R. W. Ryan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. W. Ryan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. W. Ryan more than expected).

Fields of papers citing papers by R. W. Ryan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. W. Ryan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. W. Ryan. The network helps show where R. W. Ryan may publish in the future.

Co-authorship network of co-authors of R. W. Ryan

This figure shows the co-authorship network connecting the top 25 collaborators of R. W. Ryan. A scholar is included among the top collaborators of R. W. Ryan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. W. Ryan. R. W. Ryan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ryan, R. W., et al.. (2010). Investigation into the Formation of the Genotoxic Impurity Ethyl Besylate in the Final Step Manufacturing Process of UK-369,003-26, a Novel PDE5 Inhibitor. Organic Process Research & Development. 14(4). 1027–1031. 5 indexed citations
2.
4.
Montgomery, R.K., D.A. Humphrey, R. A. Hamm, et al.. (2002). 10 and 26 GHz differential VCOs using InP HBTs. 3. 1507–1510. 8 indexed citations
5.
Kopf, R. F., R. A. Hamm, R. W. Ryan, et al.. (2000). Dry-etch fabrication of reduced area InGaAs/InP DHBT devices for high speed circuit applications. Journal of Electronic Materials. 29(2). 222–224. 6 indexed citations
6.
Burm, Jinwook, et al.. (1999). Alignment with exposed resist in photolithography. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(3). 905–907. 1 indexed citations
7.
Ryan, R. W., et al.. (1998). Side-by-side wafer bonding of InP for use with stepper-based lithography. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(4). 2110–2112. 2 indexed citations
8.
Kopf, R. F., R. A. Hamm, R. J. Malik, et al.. (1998). Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications. Solid-State Electronics. 42(12). 2239–2250. 9 indexed citations
9.
Kopf, R. F., R. A. Hamm, R. W. Ryan, A. Tate, & Jinwook Burm. (1998). Optimization of the base electrode for InGaAs/InP DHBT structures with a buried emitter-base junction. Journal of Electronic Materials. 27(11). 1244–1247. 1 indexed citations
10.
Ren, F., J. R. Lothian, H.S. Tsai, et al.. (1997). High performance pseudomorphic power HEMTs. Solid-State Electronics. 41(12). 1913–1915. 4 indexed citations
11.
Chor, Eng Fong, R. J. Malik, R. A. Hamm, & R. W. Ryan. (1996). Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's. IEEE Electron Device Letters. 17(2). 62–64. 15 indexed citations
12.
Malik, R. J., R. A. Hamm, R. F. Kopf, et al.. (1996). Self-aligned thin emitter C-doped base InP/InGaAs/InP DHBT's for high speed digital and microwave IC applications. 40–41. 3 indexed citations
13.
Lin, Jenshan, D.A. Humphrey, R. A. Hamm, et al.. (1995). Ka-band monolithic InGaAs/InP HBT VCO's in CPW structure. IEEE Microwave and Guided Wave Letters. 5(11). 379–381. 23 indexed citations
14.
Hamm, R. A., R. J. Malik, D.A. Humphrey, et al.. (1995). Carbon doping of Ga0.47In0.53As using carbontetrabromide by metalorganic molecular beam epitaxy for InP-based heterostructure bipolar transistor devices. Applied Physics Letters. 67(15). 2226–2228. 12 indexed citations
15.
Ryan, R. W., et al.. (1993). Riesgos en las instalaciones de los edificios. Dialnet (Universidad de la Rioja). 1273–1284. 2 indexed citations
16.
Malik, R. J., J. Nagle, M. Micovic, et al.. (1992). Doping limits of C, Be, and Si in GaAs grown by solid source molecular-beam epitaxy with a thermally cracked As2 source. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(2). 850–852. 22 indexed citations
17.
Lunardi, L.M., R. J. Malik, R. W. Ryan, et al.. (1990). Characteristics of AlGaAs/GaAs thin-emitter heterojunction bipolar transistors. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1288. 44–44. 5 indexed citations
19.
Malik, R. J., et al.. (1988). Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament. Applied Physics Letters. 53(26). 2661–2663. 117 indexed citations
20.
Allen, C. F. H., R. W. Ryan, & J. A. VanAllan. (1962). Addition of Ethylenic Compounds to Tetracyclones. The Journal of Organic Chemistry. 27(3). 778–779. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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