J. Nagle

477 citations

27 papers · 354 indexed · h-index 12

Impact in

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
Condensed Matter Physics
- GaN-based semiconductor devices and materials

Papers in

Nuclear Energy and Engineering 1
Atomic and Molecular Physics, and Optics 17
- Semiconductor Quantum Structures and Devices 14
- Semiconductor materials and interfaces 5

Co-authors: K. Ploog R. J. Malik D. Gershoni R. Merlín K. Bajema Shin-ichiro Tamura J. P. Wolfe D. C. Hurley
Journals: Journal of Crystal Growth (4 papers)Physical review. B, Condensed matter (3 papers)IEEE Electron Device Letters (2 papers)Applied Physics Letters (2 papers)Superlattices and Microstructures (2 papers)
Partner nations: United States France Germany

In The Last Decade

J. Nagle

26 papers receiving 342 citations

Peers

Countries citing papers authored by J. Nagle

Since Specialization

Citations

This map shows the geographic impact of J. Nagle's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Nagle with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Nagle more than expected).

Fields of papers citing papers by J. Nagle

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Nagle. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Nagle. The network helps show where J. Nagle may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Nagle, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Nagle Line = papers co-authored together J. Nagle links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Temperature dependence of collector breakdown voltage and output conductance in HBT's with AlGaAs, GaAs, InP, and InGaAs collectors R. J. Malik, A. Feygenson, D. Ritter, R. A. Hamm, M. B. Panish, J. Nagle, K. Alavi, A.Y. Cho	2002	3
2	Low frequency electrical noise characteristics of broad area 808 nm semiconductor laser diodes J. Morgan, I. Harrison, F. Klauser, A. V. Andrianov, John Orton, E.C. Larkins, J. Nagle, H. Asonen, وهيبة غربى, I. Esquivias, J. M. Arias	2002	0
3	The achievement of 20% efficiency in a CZ silicon solar cell under concentration View ·Tim Bruton, KC Heasman, J. Nagle, Richard Russell	2002	3
4	High-efficiency top-emitting microcavity LEDs on GaAs and GaAs/Si substrates Journal of Crystal Growth ·J.‐F. Carlin, P. Royo, M. Ilegems, Bruno Gérard, X. Marcadet, J. Nagle	1999	6
5	Epitaxially stacked lasers with Esak.pdunctions: a bipolar cascade laser Conference on Lasers and Electro-Optics ·E. Rosencher, Raquel Montaner, P. Pardasani, Nicolas Laurent, Odilbek Eshchanov, B. Vinter, J. Nagle	1997	1
6	Large Area High Efficiency Silicon Solar Cells made by the Laser Grooved Buried Grid Process Surrey Research Insight Open Access (The University of Surrey) ·KC Heasman, D. Viglietti, Richard Russell, Meng Wan-chu, Douglas W. Cunningham, J. Nagle, TM Bruton	1997	5
7	Electric field induced interband second harmonic generation in GaAs/AlGaAs quantum wells Applied Physics Letters ·Andrea Fiore, E. Rosencher, V. Berger, J. Nagle	1995	17
8	Microscopic structure of theDXcenter in Si-dopedAlxGa1−xAs: Observation of a vacancy by positron-annihilation spectroscopy Physical review. B, Condensed matter ·J. Mäkinen, T. Laine, K. Saarinen, P. Hautojärvi, C. Corbel, Veli-Matti Airaksinen, J. Nagle	1995	8
9	Piezoelectric field measurements by photoreflectance in strained InGaAs/GaAs structures grown on polar substrates Microelectronics Journal ·Perrine Berger, C. Bru, 眞一播本, T. Benyattou, Marc Berenguer, G. Guillot, X. Marcadet, J. Nagle	1995	11
10	Recent Developments in Concentrator Cells & Modules Using Silicon Laser Grooved Buried Grid Cells KC Heasman, F Eggeling, Richard Russell, Meng Wan-chu, J. Nagle, TM Bruton	1992	1
11	Doping limits of C, Be, and Si in GaAs grown by solid source molecular-beam epitaxy with a thermally cracked As2 source Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·R. J. Malik, J. Nagle, M. Micovic, T.D. Harris, R. W. Ryan, L. C. Hopkins	1992	22
12	Detailed Characterisations of GaAs Films on Si Obtained by Conformal Growth. MRS Proceedings ·Bruno Gérard, Didier Pribat, R. Bisaro, E. Costard, J. Nagle, C. Eaves, M. Dupuy	1992	3
13	A comparison of atomic carbon versus beryllium acceptor doping in GaAs grown by molecular beam epitaxy Journal of Crystal Growth ·J. Nagle, R. J. Malik, D. Gershoni	1991	42
14	Optical investigations of the band offsets in an InGaAs-InGaAsP-InP double-step heterostructure Semiconductor Science and Technology ·Ferrer R.A, P. Voisin, M. Voos, D. Rondi, J. Nagle, B. de Crémoux	1990	12
15	Cooling of hot carriers in three- and two-dimensionalGa0.47In0.53As Physical review. B, Condensed matter ·H. Lobentanzer, W. Stolz, J. Nagle, K. Ploog	1989	21
16	Carrier dynamics in (GaAs)m(AlAs)n superlattices Superlattices and Microstructures ·G. Peter, E. O. Göbel, W. W. Rühle, J. Nagle, K. Ploog	1989	11
17	Photoluminescence from CdTe/Hg1−yCdyTe/Hg1−xCdxTe separate confinement heterostructures Applied Physics Letters ·Dipta Daniswari, M. D. Lange, J. P. Faurie, J. Nagle	1989	11
18	Angular dependence of phonon transmission through a Fibonacci superlattice Physical review. B, Condensed matter ·D. C. Hurley, Shin-ichiro Tamura, J. P. Wolfe, K. Ploog, J. Nagle	1988	45
19	POSITION AND CHARACTER (Ɖ OR X) OF ENERGY STATES IN SHORT-PERIOD (GaAs)m(AlAs)n SUPERLATTICES Le Journal de Physique Colloques ·J. Nagle, M. Garriga, W. Stolz, Toshiro Isu, K. Ploog	1987	20
20	1.3-μm GaInAsP-InP buried ridge stripe lasers grown by LP-MOCVD on a GaAs substrate Conference on Lasers and Electro-Optics ·Manijeh Razeghi, Rosalía De l Pilar Caramutti De La Piedra, K. Kaźmierski, Michael Krakowski, J. Nagle, J. J. LEHR, J.P. Duchemin	1985	2

About J. Nagle

J. Nagle is a scholar working on Nuclear Energy and Engineering, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials, having authored 27 papers that have together received 354 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (14 papers), Semiconductor materials and devices (8 papers), Semiconductor Lasers and Optical Devices (6 papers), Semiconductor materials and interfaces (5 papers), Photonic and Optical Devices (4 papers), Advancements in Semiconductor Devices and Circuit Design (4 papers), Silicon and Solar Cell Technologies (4 papers) and Advanced Semiconductor Detectors and Materials (4 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (251 citations), Condensed Matter Physics (55 citations), Electrical and Electronic Engineering (206 citations), Materials Chemistry (140 citations) and Geochemistry and Petrology (8 citations). J. Nagle has collaborated with scholars based in United States, France and Germany. Frequent co-authors include K. Ploog, R. J. Malik, D. Gershoni, R. Merlín, K. Bajema, Shin-ichiro Tamura, J. P. Wolfe, D. C. Hurley, W. Stolz and R. W. Ryan. Their work appears in journals such as Journal of Crystal Growth, Physical review. B, Condensed matter, IEEE Electron Device Letters, Applied Physics Letters and Superlattices and Microstructures.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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