Shinya Ootomo

1.4k total citations
28 papers, 1.3k citations indexed

About

Shinya Ootomo is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Shinya Ootomo has authored 28 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Condensed Matter Physics, 21 papers in Electrical and Electronic Engineering and 15 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Shinya Ootomo's work include GaN-based semiconductor devices and materials (24 papers), Ga2O3 and related materials (15 papers) and Semiconductor materials and devices (14 papers). Shinya Ootomo is often cited by papers focused on GaN-based semiconductor devices and materials (24 papers), Ga2O3 and related materials (15 papers) and Semiconductor materials and devices (14 papers). Shinya Ootomo collaborates with scholars based in Japan, United Kingdom and United States. Shinya Ootomo's co-authors include Tamotsu Hashizume, Hideki Hasegawa, Takanori Inagaki, Takehiko Nomura, Hiroshi Kambayashi, Sadahiro Kato, Yuki Niiyama, Yoshihiro Sato, Seikoh Yoshida and T. P. Chow and has published in prestigious journals such as Applied Physics Letters, Applied Surface Science and Japanese Journal of Applied Physics.

In The Last Decade

Shinya Ootomo

28 papers receiving 1.2k citations

Peers

Countries citing papers authored by Shinya Ootomo

Since Specialization

Citations

This map shows the geographic impact of Shinya Ootomo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shinya Ootomo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shinya Ootomo more than expected).

Fields of papers citing papers by Shinya Ootomo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shinya Ootomo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shinya Ootomo. The network helps show where Shinya Ootomo may publish in the future.

Co-authorship network of co-authors of Shinya Ootomo

This figure shows the co-authorship network connecting the top 25 collaborators of Shinya Ootomo. A scholar is included among the top collaborators of Shinya Ootomo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shinya Ootomo. Shinya Ootomo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Quadrupole SIMS Analysis of Si Concentration in GaN Layers by a Molecular Ion Detection with a Minor Isotope 2011 ·Journal of Surface Analysis ·Shinya Ootomo, (unknown), (unknown)	2
2	Normally off operation GaN-based MOSFETs for power electronics applications 2010 ·Semiconductor Science and Technology ·Yuki Niiyama, Shinya Ootomo, Jiang Li, Takehiko Nomura, Sadahiro Kato, T. Paul Chow	16
3	Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage 2010 ·Solid-State Electronics ·Hiroshi Kambayashi, Yoshihiro Sato, Shinya Ootomo, (unknown), Takehiko Nomura, Sadahiro Kato, T. P. Chow	130
4	Normally-Off Operation GaN Based MOSFETs for Power Electronics 2009 ·Yuki Niiyama, Shinya Ootomo, Hiroshi Kambayashi, Nariaki Ikeda, Takehiko Nomura, Sadahiro Kato	15
5	GaN MOSFETs with Large Current and Normally-off Operation 2008 ·ECS Transactions ·Yuki Niiyama, Hiroshi Kambayashi, Shinya Ootomo, Nariaki Ikeda, Takehiko Nomura, Sadahiro Kato	2
6	Over 2 A Operation at 250 °C of GaN Metal–Oxide–Semiconductor Field Effect Transistors on Sapphire Substrates 2008 ·Japanese Journal of Applied Physics ·Yuki Niiyama, Hiroshi Kambayashi, Shinya Ootomo, Takehiko Nomura, Seikoh Yoshida, (unknown)	21
7	Micro-area analysis in SIMS depth profiling by mesa-structure preparation 2008 ·Applied Surface Science ·(unknown), Hiroshi Tamura, Yasuo Wada, K. Tsutsui, Shinya Ootomo	2
8	Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors 2008 ·Japanese Journal of Applied Physics ·Yuki Niiyama, Shinya Ootomo, Jiang Li, Hiroshi Kambayashi, Takehiko Nomura, Seikoh Yoshida, Kentarou Sawano, Yasuhiro Shiraki	18
9	Solid-Phase Diffusion of Carbon into GaN Using SiN_x/CN_x/GaN Structure 2007 ·Japanese Journal of Applied Physics ·Takeshi Kimura, Shinya Ootomo, Takehiko Nomura, Seikoh Yoshida, Tamotsu Hashizume	5
10	Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation 2007 ·IEEE Electron Device Letters ·Hiroshi Kambayashi, Yuki Niiyama, Shinya Ootomo, Takehiko Nomura, (unknown), Yoshihiro Sato, Sadahiro Kato, Seikoh Yoshida	49
11	High‐quality SiO₂/GaN interface for enhanced operation field‐effect transistor 2007 ·physica status solidi (a) ·Yuki Niiyama, (unknown), Shinya Ootomo, Hiroshi Kambayashi, Takehiko Nomura, Seikoh Yoshida	28
12	250°C operation normally-off GaN MOSFETs 2007 ·Solid-State Electronics ·Yuki Niiyama, Hiroshi Kambayashi, Shinya Ootomo, Takehiko Nomura, Seikoh Yoshida	18
13	Mapping of dopant concentration in a GaAs semiconductor by off-axis phase-shifting electron holography 2006 ·Applied Physics Letters ·Hirokazu Sasaki, Kazuo Yamamoto, Tsukasa Hirayama, Shinya Ootomo, (unknown), (unknown), (unknown), Hisayoshi Ishii	20
14	Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al~2O~3 Insulated Gate 2003 ·IEICE Transactions on Electronics ·Shinya Ootomo, Hideki Hasegawa, Tamotsu Hashizume	1
15	Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric 2003 ·Applied Physics Letters ·Tamotsu Hashizume, Shinya Ootomo, Hideki Hasegawa	233
16	Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors 2003 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Hideki Hasegawa, Takanori Inagaki, Shinya Ootomo, Tamotsu Hashizume	194
17	Al ₂ O ₃ ‐based surface passivation and insulated gate structure for AlGaN/GaN HFETs 2003 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Tamotsu Hashizume, Shinya Ootomo, Hideki Hasegawa	19
18	Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors 2003 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Tamotsu Hashizume, Shinya Ootomo, Takanori Inagaki, Hideki Hasegawa	203
19	Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures 2001 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Tamotsu Hashizume, Shinya Ootomo, (unknown), (unknown), Hideki Hasegawa	145
20	X-ray photoelectron spectroscopy characterization of AlGaN surfaces exposed to air and treated in NH4OH solution 2000 ·Applied Physics Letters ·Tamotsu Hashizume, Shinya Ootomo, (unknown), (unknown), (unknown)	33

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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