H. P. Maruska

1.1k total citations
17 papers, 922 citations indexed

About

H. P. Maruska is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, H. P. Maruska has authored 17 papers receiving a total of 922 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Condensed Matter Physics, 10 papers in Electrical and Electronic Engineering and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in H. P. Maruska's work include GaN-based semiconductor devices and materials (15 papers), Ga2O3 and related materials (8 papers) and Semiconductor materials and devices (6 papers). H. P. Maruska is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), Ga2O3 and related materials (8 papers) and Semiconductor materials and devices (6 papers). H. P. Maruska collaborates with scholars based in United States, Canada and Lithuania. H. P. Maruska's co-authors include M. Shatalov, M. Asif Khan, E. Kuokštis, Wenhong Sun, V. Adivarahan, Shuai Wu, A. Chitnis, G. Simin, David W. Hill and B. H. T. Chai and has published in prestigious journals such as Applied Physics Letters, Japanese Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

H. P. Maruska

17 papers receiving 900 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. P. Maruska United States 11 825 489 405 256 240 17 922
Hernán Rodríguez Germany 8 778 0.9× 488 1.0× 370 0.9× 280 1.1× 217 0.9× 12 856
Cyril Pernot Japan 13 858 1.0× 620 1.3× 453 1.1× 297 1.2× 255 1.1× 17 969
Alex Dobrinsky United States 8 606 0.7× 440 0.9× 446 1.1× 234 0.9× 182 0.8× 12 818
Kenji Tsubaki Japan 11 1.1k 1.3× 767 1.6× 516 1.3× 447 1.7× 225 0.9× 18 1.2k
Youssef El Gmili France 16 556 0.7× 288 0.6× 467 1.2× 164 0.6× 252 1.1× 36 803
Mathieu Leroux France 15 708 0.9× 357 0.7× 334 0.8× 196 0.8× 306 1.3× 45 890
Hyunwook Shim South Korea 11 562 0.7× 386 0.8× 622 1.5× 172 0.7× 433 1.8× 14 990
Ž. Gačević Spain 15 420 0.5× 190 0.4× 282 0.7× 187 0.7× 225 0.9× 38 611

Countries citing papers authored by H. P. Maruska

Since Specialization
Citations

This map shows the geographic impact of H. P. Maruska's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. P. Maruska with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. P. Maruska more than expected).

Fields of papers citing papers by H. P. Maruska

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. P. Maruska. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. P. Maruska. The network helps show where H. P. Maruska may publish in the future.

Co-authorship network of co-authors of H. P. Maruska

This figure shows the co-authorship network connecting the top 25 collaborators of H. P. Maruska. A scholar is included among the top collaborators of H. P. Maruska based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. P. Maruska. H. P. Maruska is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Jasiński, Jacek B., Z. Liliental‐Weber, H. P. Maruska, et al.. (2005). Structural properties of free-standing 50 mm diameter GaN wafers with (101_0) orientation grown on LiAlO2. Lawrence Berkeley National Laboratory. 1 indexed citations
2.
Shatalov, M., A. Chitnis, Jamil A. Khan, et al.. (2005). Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes. Applied Physics Letters. 86(20). 55 indexed citations
3.
Chen, C. Q., V. Adivarahan, M. Shatalov, et al.. (2005). Influence of stacking faults on the properties of GaN‐based UV light‐emitting diodes grown on non‐polar substrates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2732–2735. 10 indexed citations
4.
Fareed, R. S. Qhalid, Jianping Zhang, R. Gaška, et al.. (2005). Growth of high resistance thick GaN templates by HVPE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2091–2094. 1 indexed citations
5.
Khan, M. Asif, et al.. (2005). III–Nitride UV Devices. Japanese Journal of Applied Physics. 44(10R). 7191–7191. 364 indexed citations
6.
Sun, Wenhong, Jianping Zhang, Jinwei Yang, et al.. (2005). Fine structure of AlN∕AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering. Applied Physics Letters. 87(21). 46 indexed citations
7.
Adivarahan, V., Shuai Wu, Wenhong Sun, et al.. (2004). High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design. Applied Physics Letters. 85(10). 1838–1840. 69 indexed citations
8.
Adivarahan, V., Wenhong Sun, A. Chitnis, et al.. (2004). 250 nm AlGaN light-emitting diodes. Applied Physics Letters. 85(12). 2175–2177. 157 indexed citations
9.
Maruska, H. P., David W. Hill, M. C. Chou, John J. Gallagher, & B. H. T. Chai. (2003). Free-standing non-polar gallium nitride substrates. Opto-Electronics Review. 7–17. 7 indexed citations
10.
Reshchikov, M. A., Ali Teke, H. P. Maruska, David W. Hill, & H. Morkoç̌. (2003). Photoluminescence from freestanding GaN with (1010) orientation. MRS Proceedings. 798. 1 indexed citations
11.
Vanfleet, Richard, J. A. Simmons, H. P. Maruska, et al.. (2003). Defects in m-face GaN films grown by halide vapor phase epitaxy on LiAlO2. Applied Physics Letters. 83(6). 1139–1141. 14 indexed citations
12.
Jasiński, Jacek B., Z. Liliental‐Weber, H. P. Maruska, et al.. (2003). Structural Properties of Free-Standing 50 mm Diameter GaN Wafers with (1010) Orientation Grown on LiAlO2. MRS Proceedings. 764. 10 indexed citations
13.
Bhattacharyya, Anirban, I. Friel, Swaminathan P. Iyer, et al.. (2003). Comparative study of GaN/AlGaN MQWs grown homoepitaxially on and (0001) GaN. Journal of Crystal Growth. 251(1-4). 487–493. 23 indexed citations
14.
Kuokštis, E., Mikhail Gaevski, Wenhong Sun, et al.. (2002). Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells. Applied Physics Letters. 81(22). 4130–4132. 96 indexed citations
15.
Chen, C. Q., Mikhail Gaevski, Wenhong Sun, et al.. (2002). GaN homoepitaxy on freestanding (1100) oriented GaN substrates. Applied Physics Letters. 81(17). 3194–3196. 63 indexed citations
16.
Ho, Wingkin, et al.. (1998). Growth of Epitaxial Cubic SiC Thin Films Using Single Source Precursors. Materials science forum. 264-268. 187–190. 4 indexed citations
17.
Maruska, H. P., et al.. (1989). Performance Characteristics Of Hg 1_x Cd x Te Heterodyne Receivers. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1181. 170–170. 1 indexed citations

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