E. Kuokštis

2.5k total citations
66 papers, 2.1k citations indexed

About

E. Kuokštis is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, E. Kuokštis has authored 66 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 59 papers in Condensed Matter Physics, 42 papers in Electronic, Optical and Magnetic Materials and 27 papers in Materials Chemistry. Recurrent topics in E. Kuokštis's work include GaN-based semiconductor devices and materials (59 papers), Ga2O3 and related materials (42 papers) and ZnO doping and properties (25 papers). E. Kuokštis is often cited by papers focused on GaN-based semiconductor devices and materials (59 papers), Ga2O3 and related materials (42 papers) and ZnO doping and properties (25 papers). E. Kuokštis collaborates with scholars based in United States, Lithuania and Taiwan. E. Kuokštis's co-authors include M. Asif Khan, M. Shatalov, Jinwei Yang, H. P. Maruska, G. Simin, Jianping Zhang, V. Adivarahan, R. Gaška, M. S. Shur and Jun Yang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Physics D Applied Physics.

In The Last Decade

E. Kuokštis

62 papers receiving 2.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. Kuokštis United States 25 1.9k 1.1k 921 585 540 66 2.1k
Isamu Akasaki Isamu Akasaki Japan 13 2.5k 1.3× 1.1k 1.0× 1.1k 1.2× 1.2k 2.1× 581 1.1× 17 2.7k
Norikatsu Koide Japan 15 1.4k 0.7× 615 0.6× 685 0.7× 480 0.8× 309 0.6× 28 1.5k
C. R. Elsass United States 15 1.8k 0.9× 907 0.8× 774 0.8× 615 1.1× 216 0.4× 23 1.9k
E. Iliopoulos Greece 27 1.5k 0.8× 823 0.8× 819 0.9× 530 0.9× 420 0.8× 86 1.9k
B. Goldenberg United States 17 1.4k 0.7× 695 0.6× 671 0.7× 740 1.3× 301 0.6× 31 1.6k
C. J. Sun United States 21 1.4k 0.7× 666 0.6× 592 0.6× 516 0.9× 285 0.5× 38 1.6k
R. Averbeck Germany 19 1.2k 0.6× 596 0.6× 617 0.7× 506 0.9× 303 0.6× 39 1.5k
J. Menniger Germany 13 1.6k 0.8× 785 0.7× 1.1k 1.2× 817 1.4× 379 0.7× 26 2.0k
Yoshihiko Toyoda Japan 9 1.5k 0.8× 785 0.7× 918 1.0× 551 0.9× 294 0.5× 16 1.9k
A. Dussaigne France 28 1.4k 0.7× 627 0.6× 736 0.8× 680 1.2× 384 0.7× 74 1.8k

Countries citing papers authored by E. Kuokštis

Since Specialization
Citations

This map shows the geographic impact of E. Kuokštis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Kuokštis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Kuokštis more than expected).

Fields of papers citing papers by E. Kuokštis

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Kuokštis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Kuokštis. The network helps show where E. Kuokštis may publish in the future.

Co-authorship network of co-authors of E. Kuokštis

This figure shows the co-authorship network connecting the top 25 collaborators of E. Kuokštis. A scholar is included among the top collaborators of E. Kuokštis based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Kuokštis. E. Kuokštis is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ščajev, Patrik, et al.. (2012). Radiative and nonradiative recombination rates in cubic SiC. Journal of Luminescence. 134. 588–593. 9 indexed citations
2.
Tamulaitis, Gintautas, J. Mickevičius, V. Kazlauskienė, et al.. (2012). Suppression of defect‐related luminescence in laser‐annealed InGaN epilayers. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(3-4). 1021–1023. 1 indexed citations
3.
Tamulaitis, Gintautas, J. Mickevičius, E. Kuokštis, et al.. (2012). Carrier dynamics and efficiency droop in AlGaN epilayers with different Al content. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(7). 1677–1679. 4 indexed citations
4.
Serevičius, Tomas, et al.. (2011). Optical Characterization of MBE-Grown ZnO Epilayers. Advanced materials research. 222. 86–89. 6 indexed citations
5.
Tamulaitis, Gintautas, J. Mickevičius, E. Kuokštis, et al.. (2010). Spatially‐resolved photoluminescence study of high indium content InGaN LED structures. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(7-8). 1869–1871. 6 indexed citations
6.
Mickevičius, J., et al.. (2008). Influence of Electric Field and Carrier Localization on Carrier Dynamics in AlGaN Quantum Wells. Acta Physica Polonica A. 114(5). 1247–1252. 3 indexed citations
7.
Jarašiūnas, K., R. Aleksiejūnas, T. Malinauskas, et al.. (2005). Carrier diffusion and recombination in highly excited InGaN/GaN heterostructures. physica status solidi (a). 202(5). 820–823. 12 indexed citations
8.
Juršėnas, Saulius, E. Kuokštis, S. Miasojedovas, et al.. (2004). Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth. Applied Physics Letters. 85(5). 771–773. 12 indexed citations
9.
Chen, Changqing, M. Shatalov, E. Kuokštis, et al.. (2004). Optically Pumped Lasing at 353 nm Using Non-polar a-plane AlGaN Multiple Quantum Wells over r-plane Sapphire. Japanese Journal of Applied Physics. 43(8B). L1099–L1099. 8 indexed citations
10.
Fareed, R. S. Qhalid, V. Adivarahan, C. Q. Chen, et al.. (2004). Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN. Applied Physics Letters. 84(5). 696–698. 43 indexed citations
11.
Aleksiejūnas, R., M. Sūdžius, V. Gudelis, et al.. (2003). Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four‐wave mixing technique. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2686–2690. 27 indexed citations
12.
Zhang, Jianping, Wenhong Sun, V. Adivarahan, et al.. (2003). High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes. Journal of Electronic Materials. 32(5). 364–370. 56 indexed citations
13.
Chen, Changqing, Jianping Zhang, Jinwei Yang, et al.. (2003). A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire. Japanese Journal of Applied Physics. 42(Part 2, No. 7B). L818–L820. 47 indexed citations
14.
Kazlauskas, Karolis, Gintautas Tamulaitis, A. Žukauskas, et al.. (2003). Exciton and carrier motion in quaternary AlInGaN. Applied Physics Letters. 82(25). 4501–4503. 25 indexed citations
15.
Kuokštis, E., Jinwei Yang, G. Simin, et al.. (2002). Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells. Applied Physics Letters. 80(6). 977–979. 140 indexed citations
16.
Kuokštis, E., Mikhail Gaevski, Wenhong Sun, et al.. (2002). Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells. Applied Physics Letters. 81(22). 4130–4132. 96 indexed citations
17.
Chitnis, A., R. Pachipulusu, V. Mandavilli, et al.. (2002). Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm. Applied Physics Letters. 81(16). 2938–2940. 29 indexed citations
18.
Zhang, Jianping, M. Asif Khan, Wenhong Sun, et al.. (2002). Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm. Applied Physics Letters. 81(23). 4392–4394. 112 indexed citations
19.
Kuokštis, E., Jianping Zhang, Jun Yang, et al.. (2001). Polarization Effects and UV Emission in Highly Excited Quaternary AlInGaN Quantum Wells. physica status solidi (b). 228(2). 559–562. 7 indexed citations
20.
Kuokštis, E., Jianping Zhang, Mee‐Yi Ryu, et al.. (2001). Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells. Applied Physics Letters. 79(26). 4375–4377. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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