G. D. Chen

1.0k total citations
12 papers, 866 citations indexed

About

G. D. Chen is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, G. D. Chen has authored 12 papers receiving a total of 866 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Condensed Matter Physics, 8 papers in Electrical and Electronic Engineering and 6 papers in Materials Chemistry. Recurrent topics in G. D. Chen's work include GaN-based semiconductor devices and materials (9 papers), Semiconductor materials and devices (7 papers) and ZnO doping and properties (5 papers). G. D. Chen is often cited by papers focused on GaN-based semiconductor devices and materials (9 papers), Semiconductor materials and devices (7 papers) and ZnO doping and properties (5 papers). G. D. Chen collaborates with scholars based in United States, China and Hong Kong. G. D. Chen's co-authors include J. Y. Lin, M. Smith, H. X. Jiang, Su‐Huai Wei, M. Asif Khan, Yun Zhu, Chang-Youn Moon, C. J. Sun, Honggang Ye and Aron Walsh and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

G. D. Chen

12 papers receiving 844 citations

Peers

G. D. Chen

CMP

MC

EOMM

EEE

AMPO

Pierre Bigenwald France

G. Kamler Poland

Cengiz M. Balkaş United States

J. Mickevičius Lithuania

Hiroaki Hayashi Japan

M. Wróblewski Poland

А. В. Мудрый Belarus

G. Nataf France

Li Chang Taiwan

S. J. Henley United Kingdom

Pierre Bigenwald France

G. D. Chen

716 ×1.2

CMP

441 ×0.9

MC

398 ×1.1

EOMM

265 ×0.8

EEE

504 ×1.6

AMPO

Citations per year, relative to G. D. Chen G. D. Chen (= 1×) peers Pierre Bigenwald

Countries citing papers authored by G. D. Chen

Since Specialization

Citations

This map shows the geographic impact of G. D. Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. D. Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. D. Chen more than expected).

Fields of papers citing papers by G. D. Chen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. D. Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. D. Chen. The network helps show where G. D. Chen may publish in the future.

Co-authorship network of co-authors of G. D. Chen

This figure shows the co-authorship network connecting the top 25 collaborators of G. D. Chen. A scholar is included among the top collaborators of G. D. Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. D. Chen. G. D. Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

12 of 12 papers shown

1.

Ye, Honggang, Zhicheng Su, Fei Tang, et al.. (2017). Role of free electrons in phosphorescence in n-type wide bandgap semiconductors. Physical Chemistry Chemical Physics. 19(45). 30332–30338. 4 indexed citations

2.

Zhu, Yun, G. D. Chen, Honggang Ye, et al.. (2008). Electronic structure and phase stability of MgO, ZnO, CdO, and related ternary alloys. Physical Review B. 77(24). 180 indexed citations

3.

Moon, Chang-Youn, Su‐Huai Wei, Yun Zhu, & G. D. Chen. (2006). Band-gap bowing coefficients in large size-mismatched II-VI alloys: first-principles calculations. Physical Review B. 74(23). 76 indexed citations

4.

Smith, M., G. D. Chen, J. Y. Lin, et al.. (1996). Time-resolved photoluminescence studies of InGaN epilayers. Applied Physics Letters. 69(19). 2837–2839. 90 indexed citations

5.

Chen, G. D., M. Smith, J. Y. Lin, et al.. (1996). Photoluminescence studies of band-edge transitions in GaN epitaxial layers grown by plasma-assisted molecular beam epitaxy. Journal of Applied Physics. 79(5). 2675–2683. 45 indexed citations

6.

Smith, M., G. D. Chen, J. Y. Lin, et al.. (1996). Mechanisms of band-edge emission in Mg-doped p-type GaN. Applied Physics Letters. 68(14). 1883–1885. 108 indexed citations

7.

Chen, G. D., M. Smith, J. Y. Lin, et al.. (1996). Fundamental optical transitions in GaN. Applied Physics Letters. 68(20). 2784–2786. 155 indexed citations

8.

Smith, M., G. D. Chen, J. Y. Lin, et al.. (1996). Free excitonic transitions in GaN, grown by metal-organic chemical-vapor deposition. Journal of Applied Physics. 79(9). 7001–7004. 44 indexed citations

9.

Smith, M., G. D. Chen, J. Y. Lin, et al.. (1995). Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy. Applied Physics Letters. 66(25). 3474–3476. 30 indexed citations

10.

Smith, M., G. D. Chen, J. Y. Lin, et al.. (1995). Acceptor-bound exciton recombination dynamics in p-type GaN. Applied Physics Letters. 67(22). 3295–3297. 20 indexed citations

11.

Chen, G. D., M. Smith, J. Y. Lin, et al.. (1995). Neutral-donor-bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition. Applied Physics Letters. 67(12). 1653–1655. 49 indexed citations

12.

Smith, M., G. D. Chen, J. Y. Lin, et al.. (1995). Excitonic recombination in GaN grown by molecular beam epitaxy. Applied Physics Letters. 67(23). 3387–3389. 65 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact