D. T. Olson

4.1k total citations · 1 hit paper
30 papers, 3.4k citations indexed

About

D. T. Olson is a scholar working on Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, D. T. Olson has authored 30 papers receiving a total of 3.4k indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Condensed Matter Physics, 14 papers in Materials Chemistry and 13 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in D. T. Olson's work include GaN-based semiconductor devices and materials (30 papers), ZnO doping and properties (14 papers) and Ga2O3 and related materials (13 papers). D. T. Olson is often cited by papers focused on GaN-based semiconductor devices and materials (30 papers), ZnO doping and properties (14 papers) and Ga2O3 and related materials (13 papers). D. T. Olson collaborates with scholars based in United States and United Kingdom. D. T. Olson's co-authors include J. N. Kuznia, M. Asif Khan, Amal R. Bhattarai, J. M. Van Hove, M. Asif Khan, M. Asif Khan, J. A. Freitas, Jinwook Burm, M. S. Shur and W. J. Schaff and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

D. T. Olson

30 papers receiving 3.3k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction

1993 715 citations M. Asif Khan, Amal R. Bhattarai et al. Applied Physics Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D. T. Olson United States	21	3.0k	1.5k	1.4k	1.2k	981	30	3.4k
J. N. Kuznia United States	29	3.9k 1.3×	2.0k 1.3×	1.9k 1.3×	1.5k 1.3×	1.3k 1.3×	51	4.3k
P. Kozodoy United States	30	3.6k 1.2×	2.0k 1.3×	1.8k 1.3×	1.4k 1.1×	1.3k 1.3×	60	4.2k
D. J. As Germany	34	2.7k 0.9×	1.5k 1.0×	1.3k 0.9×	1.5k 1.2×	1.6k 1.7×	236	3.6k
M. D. Bremser United States	30	3.6k 1.2×	1.6k 1.1×	1.6k 1.1×	1.8k 1.5×	919 0.9×	76	4.0k
A. Georgakilas Greece	29	1.8k 0.6×	1.3k 0.8×	947 0.7×	863 0.7×	928 0.9×	202	2.7k
T. Paskova Sweden	31	2.7k 0.9×	1.1k 0.8×	1.6k 1.1×	1.8k 1.5×	976 1.0×	207	3.4k
Tsvetanka Zheleva United States	25	2.0k 0.7×	1.2k 0.8×	1.0k 0.7×	1.4k 1.2×	669 0.7×	73	2.9k
E. J. Tarsa United States	17	1.8k 0.6×	980 0.7×	1.1k 0.8×	1.2k 1.0×	582 0.6×	31	2.4k
Jinqiao Xie United States	34	2.9k 0.9×	1.4k 0.9×	1.6k 1.1×	1.3k 1.0×	806 0.8×	101	3.4k
S. A. Nikishin United States	28	1.9k 0.6×	1.1k 0.8×	810 0.6×	874 0.7×	942 1.0×	117	2.5k

Countries citing papers authored by D. T. Olson

Since Specialization

Citations

This map shows the geographic impact of D. T. Olson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. T. Olson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. T. Olson more than expected).

Fields of papers citing papers by D. T. Olson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. T. Olson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. T. Olson. The network helps show where D. T. Olson may publish in the future.

Co-authorship network of co-authors of D. T. Olson

This figure shows the co-authorship network connecting the top 25 collaborators of D. T. Olson. A scholar is included among the top collaborators of D. T. Olson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. T. Olson. D. T. Olson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Witkowski, L., H.Q. Tserng, P. Saunier, et al.. (2005). Effects of AlGaN/GaN HEMT structure on RF reliability. Electronics Letters. 41(3). 155–157. 53 indexed citations

Khan, M.A., J. N. Kuznia, D. T. Olson, et al.. (2005). Deep submicron AlGaN/GaN heterostructure field effect transistors for nficrowave and high temperature applications. 149–150. 2 indexed citations

Khan, M. Asif, S. Krishnankutty, R. A. Skogman, et al.. (1996). Response to ‘‘Comment on ‘Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature’ ’’ [Appl. Phys. Lett. 68, 3197 (1996)]. Applied Physics Letters. 68(22). 3198–3198. 1 indexed citations

Glaser, E. R., T. A. Kennedy, K. Doverspike, et al.. (1995). Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition. Physical review. B, Condensed matter. 51(19). 13326–13336. 272 indexed citations

Adesida, I., A. T. Ping, C. Youtsey, et al.. (1994). Characteristics of chemically assisted ion beam etching of gallium nitride. Applied Physics Letters. 65(7). 889–891. 67 indexed citations

Khan, M. Asif, J. N. Kuznia, S. Krishnankutty, et al.. (1994). Electronic and Optoelectronic Devices Based on GaN-AIGaN Heterostructures. MRS Proceedings. 339. 1 indexed citations

Olson, D. T., et al.. (1994). <title>Photoconductive and photovoltaic ultraviolet sensors based on GaN</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2149. 254–257. 3 indexed citations

Khan, M. Asif, et al.. (1993). Schottky barrier photodetector based on Mg-doped p-type GaN films. Applied Physics Letters. 63(18). 2455–2456. 161 indexed citations

Khan, M. Asif, D. T. Olson, J. N. Kuznia, W. E. Carlos, & J. A. Freitas. (1993). The nature of donor conduction in n-GaN. Journal of Applied Physics. 74(9). 5901–5903. 21 indexed citations

10.

Glaser, E. R., T. A. Kennedy, J. A. Freitas, et al.. (1993). Observation of optically detected magnetic resonance in GaN films. Applied Physics Letters. 63(19). 2673–2675. 36 indexed citations

11.

Khan, M. Asif, Amal R. Bhattarai, J. N. Kuznia, & D. T. Olson. (1993). High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction. Applied Physics Letters. 63(9). 1214–1215. 715 indexed citations breakdown →

12.

Carlos, W. E., J. A. Freitas, M. Asif Khan, D. T. Olson, & J. N. Kuznia. (1993). Electron-spin-resonance studies of donors in wurtzite GaN. Physical review. B, Condensed matter. 48(24). 17878–17884. 113 indexed citations

13.

Khan, M. Asif, et al.. (1992). Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates. Applied Physics Letters. 61(21). 2539–2541. 98 indexed citations

14.

Khan, M. Asif, et al.. (1992). High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers. Applied Physics Letters. 60(23). 2917–2919. 326 indexed citations

15.

Krishnankutty, S., R. M. Kolbas, M. Asif Khan, et al.. (1992). Optical characterization of AlGaN-GaN-AlGaN quantum wells. Journal of Electronic Materials. 21(4). 437–440. 15 indexed citations

16.

Krishnankutty, S., R. M. Kolbas, Matiullah Khan, et al.. (1992). Photoluminescence characterization of AlGaN-GaN pseudomorphic quantum wells and calculation of strain induced bandgap shifts. Journal of Electronic Materials. 21(6). 609–612. 12 indexed citations

17.

Khan, M. Asif, R. A. Skogman, J. M. Van Hove, D. T. Olson, & J. N. Kuznia. (1992). Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition. Applied Physics Letters. 60(11). 1366–1368. 86 indexed citations

18.

Khan, M. Asif, J. N. Kuznia, Amal R. Bhattarai, & D. T. Olson. (1992). GaN-Al_xGa_1−xN Heterostructures Deposition by Low Pressure Metalorganic Chemical Vapor Deposition for Metal Insulator Semiconductor Field Effect Transistor (Misfet) Devices. MRS Proceedings. 281. 7 indexed citations

19.

Khan, M. Asif, J. N. Kuznia, J. M. Van Hove, et al.. (1991). Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition. Applied Physics Letters. 58(5). 526–527. 144 indexed citations

20.

Khan, M. Asif, D. T. Olson, J. M. Van Hove, & J. N. Kuznia. (1991). Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low-pressure metalorganic chemical vapor deposition. Applied Physics Letters. 58(14). 1515–1517. 94 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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