Wenhong Sun

2.8k total citations
65 papers, 2.4k citations indexed

About

Wenhong Sun is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Biomedical Engineering. According to data from OpenAlex, Wenhong Sun has authored 65 papers receiving a total of 2.4k indexed citations (citations by other indexed papers that have themselves been cited), including 53 papers in Condensed Matter Physics, 42 papers in Electronic, Optical and Magnetic Materials and 30 papers in Biomedical Engineering. Recurrent topics in Wenhong Sun's work include GaN-based semiconductor devices and materials (53 papers), Ga2O3 and related materials (38 papers) and ZnO doping and properties (24 papers). Wenhong Sun is often cited by papers focused on GaN-based semiconductor devices and materials (53 papers), Ga2O3 and related materials (38 papers) and ZnO doping and properties (24 papers). Wenhong Sun collaborates with scholars based in United States and China. Wenhong Sun's co-authors include M. Shatalov, Jinwei Yang, M. Asif Khan, V. Adivarahan, R. Gaška, M. S. Shur, X. Hu, A. V. Lunev, Shuai Wu and Michael Wraback and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Wenhong Sun

64 papers receiving 2.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Wenhong Sun United States 24 2.0k 1.3k 979 833 609 65 2.4k
Feng Yun China 27 1.5k 0.7× 1.1k 0.9× 1.5k 1.5× 521 0.6× 1.1k 1.8× 149 2.7k
A. N. Smirnov Russia 19 1.6k 0.8× 892 0.7× 1.5k 1.5× 661 0.8× 718 1.2× 151 2.5k
Asif Khan United States 27 2.5k 1.2× 1.5k 1.1× 1.1k 1.1× 783 0.9× 1.2k 2.0× 127 3.1k
M. A. Moram United Kingdom 29 2.6k 1.3× 1.0k 0.8× 1.6k 1.6× 1.0k 1.2× 1.1k 1.9× 90 3.5k
Joon Seop Kwak South Korea 29 1.5k 0.8× 745 0.6× 1.1k 1.2× 353 0.4× 1.6k 2.7× 191 2.6k
V. Lebedev Germany 24 1.0k 0.5× 407 0.3× 745 0.8× 725 0.9× 741 1.2× 127 1.8k
C. Bayram United States 25 1.4k 0.7× 752 0.6× 847 0.9× 483 0.6× 747 1.2× 95 2.0k
N. Gogneau France 24 826 0.4× 457 0.3× 762 0.8× 484 0.6× 532 0.9× 81 1.5k
Masahito Yamaguchi Japan 19 999 0.5× 576 0.4× 548 0.6× 307 0.4× 348 0.6× 87 1.3k
Pramod Reddy United States 25 1.6k 0.8× 1.0k 0.8× 566 0.6× 431 0.5× 956 1.6× 104 1.9k

Countries citing papers authored by Wenhong Sun

Since Specialization
Citations

This map shows the geographic impact of Wenhong Sun's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wenhong Sun with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wenhong Sun more than expected).

Fields of papers citing papers by Wenhong Sun

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wenhong Sun. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wenhong Sun. The network helps show where Wenhong Sun may publish in the future.

Co-authorship network of co-authors of Wenhong Sun

This figure shows the co-authorship network connecting the top 25 collaborators of Wenhong Sun. A scholar is included among the top collaborators of Wenhong Sun based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Wenhong Sun. Wenhong Sun is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Xiao, Kai, Jianyu Deng, Jicai Zhang, et al.. (2024). Enhancing power density in D-mode GaN HEMT direct-current triboelectric nanogenerators through ICP-etched surface engineering. Materials Today Communications. 41. 111128–111128. 3 indexed citations
2.
Xiao, Kai, et al.. (2023). High current implementation of Cu/P-type GaN triboelectric nanogenerator. Applied Physics Letters. 122(8). 2 indexed citations
3.
Zhang, Ran, Gang Zheng, Bin Cheng, et al.. (2023). AlGaN‐Based Solar‐Blind Ultraviolet Detector with a Response Wavelength of 217 nm. physica status solidi (a). 220(20). 7 indexed citations
4.
Zhu, Xinglin, et al.. (2023). Defect Behavior on the Degradation of AlGaN-Based 234 nm LEDs. IEEE Transactions on Electron Devices. 71(2). 1102–1108. 7 indexed citations
5.
Zhang, Zhi, Zhaozheng Wang, Tianzhao Bu, et al.. (2022). Friction-Dominated Carrier Excitation and Transport Mechanism for GaN-Based Direct-Current Triboelectric Nanogenerators. ACS Applied Materials & Interfaces. 14(20). 24020–24027. 54 indexed citations
6.
Chen, Zhiqiang, Min Li, Xinglin Zhu, et al.. (2022). Carrier distribution characteristics of AlGaN-based ultraviolet light-emitting diodes at elevated temperatures. Journal of Materials Science Materials in Electronics. 33(21). 17395–17403. 2 indexed citations
7.
Lachab, M., Wenhong Sun, Rakesh Jain, et al.. (2016). Optical polarization control of photo-pumped stimulated emissions at 238 nm from AlGaN multiple-quantum-well laser structures on AlN substrates. Applied Physics Express. 10(1). 12702–12702. 20 indexed citations
8.
Shatalov, Max, Wenhong Sun, Rakesh Jain, et al.. (2014). High power AlGaN ultraviolet light emitters. Semiconductor Science and Technology. 29(8). 84007–84007. 155 indexed citations
9.
Shatalov, Max, Wenhong Sun, A. V. Lunev, et al.. (2012). 278 nm deep ultraviolet LEDs with 11% external quantum efficiency. 255–256. 7 indexed citations
10.
Garrett, Gregory A., Anand V. Sampath, H. Shen, et al.. (2010). Evaluation of AlGaN‐based deep ultraviolet emitter active regions by temperature dependent time‐resolved photoluminescence. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(10). 2390–2393. 16 indexed citations
11.
Jain, Rahul, Wenhong Sun, Jinwei Yang, et al.. (2008). Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes. Applied Physics Letters. 93(5). 86 indexed citations
12.
Gong, Zheng, Mikhail Gaevski, V. Adivarahan, et al.. (2006). Optical power degradation mechanisms in AlGaN-based 280nm deep ultraviolet light-emitting diodes on sapphire. Applied Physics Letters. 88(12). 63 indexed citations
13.
Lunev, A. V., X. Hu, Jianyu Deng, et al.. (2005). 10Milliwatt Pulse Operation of 265nm AlGaN Light Emitting Diodes. Japanese Journal of Applied Physics. 44(1). 1 indexed citations
14.
Shatalov, M., Shuai Wu, V. Adivarahan, et al.. (2005). White light generation using 280 nm light emitting diode pumps. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2832–2835. 12 indexed citations
15.
Skromme, B. J., Rafael Dalmau, R. Schlesser, et al.. (2004). Band-edge exciton states in AlN single crystals and epitaxial layers. Applied Physics Letters. 85(19). 4334–4336. 63 indexed citations
16.
Sun, Wenhong, V. Adivarahan, M. Shatalov, et al.. (2004). Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280 nm. Japanese Journal of Applied Physics. 43(No. 11A). L1419–L1421. 64 indexed citations
17.
Adivarahan, V., Shuai Wu, Wenhong Sun, et al.. (2004). High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design. Applied Physics Letters. 85(10). 1838–1840. 69 indexed citations
18.
Chen, Changqing, Jianping Zhang, Jinwei Yang, et al.. (2003). A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire. Japanese Journal of Applied Physics. 42(Part 2, No. 7B). L818–L820. 47 indexed citations
19.
Zhang, Jianping, Wenhong Sun, V. Adivarahan, et al.. (2003). High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes. Journal of Electronic Materials. 32(5). 364–370. 56 indexed citations
20.
Kuokštis, E., Mikhail Gaevski, Wenhong Sun, et al.. (2002). Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells. Applied Physics Letters. 81(22). 4130–4132. 96 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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