R. L. Hengehold

1.2k total citations
84 papers, 1.0k citations indexed

About

R. L. Hengehold is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, R. L. Hengehold has authored 84 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 68 papers in Electrical and Electronic Engineering, 37 papers in Materials Chemistry and 28 papers in Condensed Matter Physics. Recurrent topics in R. L. Hengehold's work include Semiconductor materials and devices (40 papers), GaN-based semiconductor devices and materials (28 papers) and Semiconductor Quantum Structures and Devices (17 papers). R. L. Hengehold is often cited by papers focused on Semiconductor materials and devices (40 papers), GaN-based semiconductor devices and materials (28 papers) and Semiconductor Quantum Structures and Devices (17 papers). R. L. Hengehold collaborates with scholars based in United States, South Korea and Ukraine. R. L. Hengehold's co-authors include Y. K. Yeo, Frank L. Pedrotti, Gernot S. Pomrenke, Robert J. Almassy, W. C. Mitchel, C. J. Vesely, D. W. Langer, Mee‐Yi Ryu, D. Johnstone and G. W. Turner and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

R. L. Hengehold

80 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. L. Hengehold United States 17 704 603 327 257 234 84 1.0k
T. Tuomi Finland 16 814 1.2× 382 0.6× 422 1.3× 211 0.8× 139 0.6× 128 1.1k
Fredrik Owman Sweden 14 767 1.1× 479 0.8× 379 1.2× 112 0.4× 212 0.9× 15 1.1k
H. Cerva Germany 23 994 1.4× 613 1.0× 590 1.8× 193 0.8× 241 1.0× 91 1.5k
R. N. Kyutt Russia 13 337 0.5× 412 0.7× 280 0.9× 276 1.1× 145 0.6× 95 738
Shigehiko Hasegawa Japan 17 427 0.6× 589 1.0× 536 1.6× 464 1.8× 286 1.2× 170 1.1k
J. C. Tramontana United States 12 449 0.6× 384 0.6× 382 1.2× 160 0.6× 99 0.4× 26 777
Junji Saraie Japan 21 1.3k 1.8× 864 1.4× 814 2.5× 225 0.9× 168 0.7× 93 1.6k
Elizabeth C. Carr United States 12 873 1.2× 618 1.0× 548 1.7× 483 1.9× 305 1.3× 21 1.4k
Daniela Cavalcoli Italy 16 704 1.0× 502 0.8× 260 0.8× 184 0.7× 155 0.7× 85 936
Anne‐Marie Papon France 21 952 1.4× 423 0.7× 399 1.2× 99 0.4× 109 0.5× 62 1.2k

Countries citing papers authored by R. L. Hengehold

Since Specialization
Citations

This map shows the geographic impact of R. L. Hengehold's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. L. Hengehold with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. L. Hengehold more than expected).

Fields of papers citing papers by R. L. Hengehold

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. L. Hengehold. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. L. Hengehold. The network helps show where R. L. Hengehold may publish in the future.

Co-authorship network of co-authors of R. L. Hengehold

This figure shows the co-authorship network connecting the top 25 collaborators of R. L. Hengehold. A scholar is included among the top collaborators of R. L. Hengehold based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. L. Hengehold. R. L. Hengehold is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Moore, Elizabeth A., Y. K. Yeo, Mee‐Yi Ryu, & R. L. Hengehold. (2010). Electrical Activation Studies of Silicon-Implanted Al x Ga1−x N with Aluminum Mole Fraction of 11% to 51%. Journal of Electronic Materials. 40(1). 11–16. 9 indexed citations
2.
Yeo, Y. K., et al.. (2005). Electrical and optical activation studies of Si-implanted GaN. Journal of Electronic Materials. 34(8). 1157–1164. 18 indexed citations
3.
Marciniak, Michael A., et al.. (2004). Excitation- and structure-dependence of recombination mechanisms in antimony-based MWIR photonic devices. APS. 2004.
4.
5.
Ryu, Mee‐Yi, Y. K. Yeo, Michael A. Marciniak, R. L. Hengehold, & T. Steiner. (2004). High electrical activation efficiency obtained from Si-implanted Al0.18Ga0.82N. Journal of Applied Physics. 96(11). 6277–6280. 7 indexed citations
6.
Marciniak, Michael A., et al.. (2002). Time Resolved Photoluminescence Spectra of Mid-Infrared Quantum Well Lasers. APS.
7.
Hengehold, R. L., et al.. (2001). Optical investigation of MBE grown Si-doped AlxGa1−xN as a function of nominal Al mole fraction up to 0.5. Journal of Crystal Growth. 227-228. 458–465. 5 indexed citations
8.
Yeo, Y. K., et al.. (2000). Electrical properties of boron-doped p–SiGeC grown on n−–Si substrate. Applied Physics Letters. 77(9). 1327–1329. 10 indexed citations
9.
Hengehold, R. L., et al.. (1998). Recombination dynamics in InAsSb quantum-well diode lasers measured using photoluminescence upconversion. Applied Physics Letters. 73(20). 2890–2892. 10 indexed citations
10.
Marciniak, Michael A., R. L. Hengehold, Y. K. Yeo, & G. W. Turner. (1998). Optical characterization of molecular beam epitaxially grown InAsSb nearly lattice matched to GaSb. Journal of Applied Physics. 84(1). 480–488. 34 indexed citations
11.
Pomrenke, Gernot S., et al.. (1997). Optical activation of ion implanted and annealed GaN. Physica Scripta. T69. 276–280. 16 indexed citations
12.
Andry, Paul, et al.. (1996). Low-Temperature Growth of Si:Er by Electron Cyclotron Resonance Pecvd Using Metal Organics. MRS Proceedings. 422. 1 indexed citations
13.
Yeo, Y. K., et al.. (1995). Pr3+ luminescence in GaAs and AlxGa1−xAs implanted with Pr. Journal of Applied Physics. 78(7). 4651–4658. 3 indexed citations
14.
Yeo, Y. K., et al.. (1995). Er-related deep centers in GaAs doped with Er by ion implantation and molecular beam epitaxy. Journal of Applied Physics. 77(8). 3919–3926. 14 indexed citations
15.
Yeo, Y. K., et al.. (1995). Annealing Study of Ion Implanted MOCVD and MBE Grown GaN. MRS Proceedings. 395. 12 indexed citations
16.
Yeo, Y. K., et al.. (1995). Junction characteristics of Ga0.5In0.5P n+p diodes and solar cells. Journal of Applied Physics. 77(11). 5763–5772. 19 indexed citations
17.
Pomrenke, Gernot S., et al.. (1983). Luminescence characteristics of the 1.4 eV silicon related complex in gallium arsenide. Physica B+C. 116(1-3). 414–419. 6 indexed citations
18.
Hengehold, R. L., et al.. (1975). Electron-energy-loss study of the mercury chalcogenides. Journal of Applied Physics. 46(10). 4294–4300. 2 indexed citations
19.
Hengehold, R. L., Robert J. Almassy, & Frank L. Pedrotti. (1970). Electron Energy-Loss and Ultraviolet-Reflectivity Spectra of Crystalline ZnO. Physical review. B, Solid state. 1(12). 4784–4791. 96 indexed citations
20.
Hengehold, R. L., et al.. (1968). Ultraviolet Reflectivity Spectra ofCdS1−xSexSingle Crystals. Physical Review. 174(3). 808–812. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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