Pavel Aseev

834 total citations
16 papers, 499 citations indexed

About

Pavel Aseev is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Pavel Aseev has authored 16 papers receiving a total of 499 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Condensed Matter Physics, 10 papers in Atomic and Molecular Physics, and Optics and 8 papers in Materials Chemistry. Recurrent topics in Pavel Aseev's work include GaN-based semiconductor devices and materials (11 papers), Semiconductor Quantum Structures and Devices (7 papers) and ZnO doping and properties (6 papers). Pavel Aseev is often cited by papers focused on GaN-based semiconductor devices and materials (11 papers), Semiconductor Quantum Structures and Devices (7 papers) and ZnO doping and properties (6 papers). Pavel Aseev collaborates with scholars based in Spain, Italy and Netherlands. Pavel Aseev's co-authors include R. Nötzel, Paul E. D. Soto Rodriguez, Víctor J. Gómez, Frenk Boekhout, Sara Martí‐Sánchez, Jordi Arbiol, E. Calleja, A. А. Ситникова, M. Willander and Д. В. Нечаев and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Nano Energy.

In The Last Decade

Pavel Aseev

16 papers receiving 486 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Pavel Aseev Spain	11	258	243	198	196	182	16	499
Momoko Deura Japan	16	145 0.6×	251 1.0×	346 1.7×	203 1.0×	166 0.9×	58	621
H.‐H. Wehmann Germany	16	299 1.2×	369 1.5×	305 1.5×	190 1.0×	129 0.7×	44	653
Johannes Ledig Germany	15	459 1.8×	467 1.9×	201 1.0×	106 0.5×	157 0.9×	33	711
Ž. Gačević Spain	15	420 1.6×	282 1.2×	225 1.1×	258 1.3×	187 1.0×	38	611
M. Korytov France	14	350 1.4×	311 1.3×	174 0.9×	138 0.7×	122 0.7×	44	560
P. Chen China	12	383 1.5×	232 1.0×	276 1.4×	123 0.6×	110 0.6×	33	530
Jintong Xu China	13	241 0.9×	138 0.6×	248 1.3×	124 0.6×	110 0.6×	44	468
Ting‐Wei Yeh United States	9	307 1.2×	321 1.3×	230 1.2×	191 1.0×	321 1.8×	13	602
Asad J. Mughal United States	10	391 1.5×	198 0.8×	269 1.4×	176 0.9×	108 0.6×	18	523

Countries citing papers authored by Pavel Aseev

Since Specialization

Citations

This map shows the geographic impact of Pavel Aseev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Pavel Aseev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Pavel Aseev more than expected).

Fields of papers citing papers by Pavel Aseev

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Pavel Aseev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Pavel Aseev. The network helps show where Pavel Aseev may publish in the future.

Co-authorship network of co-authors of Pavel Aseev

This figure shows the co-authorship network connecting the top 25 collaborators of Pavel Aseev. A scholar is included among the top collaborators of Pavel Aseev based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Pavel Aseev. Pavel Aseev is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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16 of 16 papers shown

Rajak, Piu, José Mánuel, Pavel Aseev, et al.. (2019). Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging. Nanoscale. 11(28). 13632–13638. 8 indexed citations

Aseev, Pavel, Guanzhong Wang, Sara Martí‐Sánchez, et al.. (2019). Ballistic InSb Nanowires and Networks via Metal-Sown Selective Area Growth. Nano Letters. 19(12). 9102–9111. 33 indexed citations

Mánuel, José, Pavel Aseev, Paul E. D. Soto Rodriguez, et al.. (2018). (S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN. Journal of Alloys and Compounds. 783. 697–708. 5 indexed citations

Aseev, Pavel, Alexandra Fursina, Frenk Boekhout, et al.. (2018). Selectivity Map for Molecular Beam Epitaxy of Advanced III–V Quantum Nanowire Networks. Nano Letters. 19(1). 218–227. 93 indexed citations

Křížek, Filip, Joachim E. Sestoft, Pavel Aseev, et al.. (2018). Field effect enhancement in buffered quantum nanowire networks. Physical Review Materials. 2(9). 74 indexed citations

Aseev, Pavel, Ž. Gačević, José Mánuel, et al.. (2018). Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy. Journal of Crystal Growth. 493. 65–75. 6 indexed citations

Aseev, Pavel, Ž. Gačević, Almudena Torres‐Pardo, J.M. González-Calbet, & E. Calleja. (2016). Improving optical performance of GaN nanowires grown by selective area growth homoepitaxy: Influence of substrate and nanowire dimensions. Applied Physics Letters. 108(25). 18 indexed citations

Gómez, Víctor J., Ž. Gačević, Paul E. D. Soto Rodriguez, et al.. (2016). Comparative study of single InGaN layers grown on Si(111) and GaN(0001) templates: The role of surface wetting and epitaxial constraint. Journal of Crystal Growth. 447. 48–54. 5 indexed citations

Aseev, Pavel, Paul E. D. Soto Rodriguez, Víctor J. Gómez, et al.. (2015). Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range. Applied Physics Letters. 106(7). 38 indexed citations

10.

Rodriguez, Paul E. D. Soto, Pavel Aseev, Víctor J. Gómez, et al.. (2015). Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si(111). Electrochemistry Communications. 60. 158–162. 8 indexed citations

11.

Rodriguez, Paul E. D. Soto, Pavel Aseev, Víctor J. Gómez, et al.. (2015). Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111). Applied Physics Letters. 106(2). 18 indexed citations

12.

Rodriguez, Paul E. D. Soto, et al.. (2015). InN/InGaN quantum dot photoelectrode: Efficient hydrogen generation by water splitting at zero voltage. Nano Energy. 13. 291–297. 63 indexed citations

13.

Rodriguez, Paul E. D. Soto, Praveen Kumar, Víctor J. Gómez, et al.. (2014). Photoelectrochemical water splitting and hydrogen generation by a spontaneously formed InGaN nanowall network. Applied Physics Letters. 104(22). 24 indexed citations

14.

Aseev, Pavel, Paul E. D. Soto Rodriguez, Víctor J. Gómez, et al.. (2013). Uniform Low-to-High In Composition InGaN Layers Grown on Si. Applied Physics Express. 6(11). 115503–115503. 15 indexed citations

15.

Нечаев, Д. В., Pavel Aseev, V. N. Jmerik, et al.. (2013). Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE. Journal of Crystal Growth. 378. 319–322. 49 indexed citations

16.

Jmerik, V. N., A. M. Mizerov, Д. В. Нечаев, et al.. (2012). Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring. Journal of Crystal Growth. 354(1). 188–192. 42 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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