S. Koveshnikov

1.3k citations

83 papers · 1.0k indexed · h-index 16

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 41
- Silicon and Solar Cell Technologies 35
- Advancements in Semiconductor Devices and Circuit Design 25
- Integrated Circuits and Semiconductor Failure Analysis 17
- Ferroelectric and Negative Capacitance Devices 14
- Advanced Memory and Neural Computing 12
- Thin-Film Transistor Technologies 10
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces 27
Materials Chemistry
Computational Mechanics top 10%
Surfaces, Coatings and Films

Co-authors: S. Oktyabrsky Wilman Tsai Michail M. Yakimov G. A. Rozgonyi Vadim Tokranov Kang Min Ok Oleg Kononchuk J. C. Lee
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Materials Chemistry
Journals: Applied Physics Letters (9 papers)Materials Science and Engineering B (4 papers)Journal of Applied Physics (3 papers)
Partner nations: United States Uzbekistan Russia

In The Last Decade

S. Koveshnikov

79 papers receiving 966 citations

Peers

Countries citing papers authored by S. Koveshnikov

Since Specialization

Citations

This map shows the geographic impact of S. Koveshnikov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Koveshnikov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Koveshnikov more than expected).

Fields of papers citing papers by S. Koveshnikov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Koveshnikov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Koveshnikov. The network helps show where S. Koveshnikov may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S. Koveshnikov, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Koveshnikov Line = papers co-authored together S. Koveshnikov links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Composition of Silicon Alloyed with Gallium and Phosphorus Atoms Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques ·明雄大山,S. Koveshnikov,H. Sauppe,Aigars Kļaviņš	2024	0
2	Influence of Nickel Impurity on the Operating Parameters of a Silicon Solar Cell Russian Microelectronics ·Prakasit Wannapaschaiyong,明雄大山,В. Б. Оджаев,Maarten van der Hulst,В. С. Просолович,Klaudia Sobul,S. Koveshnikov	2024	0
3	The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms Surface Engineering and Applied Electrochemistry ·孙承叔,S. Koveshnikov,均吾原田,Н. А. Денисова,Duncan W. Wright,布施光代	2024	0
4	EBIC Imaging of Conductive Paths Formed in Graphene Oxide as a Result of Resistive Switching Applied Sciences ·E. B. Yakimov,S. Koveshnikov,O. V. Kononenko	2023	1
5	Codiffusion of Gallium and Phosphorus Atoms in Silicon Surface Engineering and Applied Electrochemistry ·明雄大山,Hyeyun Cho,S. Koveshnikov,Maryam Iranneghad,G Caserta	2023	2
6	Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices Nanomaterials ·S. Koveshnikov,O. V. Kononenko,Yian-Yuan Chu,Olesya O. Kapitanova,H. P. Edward,V. Volkov,E. B. Yakimov	2022	6
7	Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon Physics of the Solid State ·明雄大山,S. Koveshnikov,G Caserta,Eszter Csernela,Sadam Sadam	2022	0
8	Radiation Stability of Nickel Doped Solar Cells Physics of the Solid State ·Maarten van der Hulst,Prakasit Wannapaschaiyong,S. Koveshnikov,Н. А. Денисова,雅幸福田	2022	5
9	Formation of Complexes of Phosphorus and Boron Impurity Atoms in Silicon Inorganic Materials ·Charles-Tanguy Le Roux,Prakasit Wannapaschaiyong,S. Koveshnikov,FANINI Lucia,Jinfa Peng	2022	8
10	SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY Semiconductors ·明雄大山,S. Koveshnikov,Hyeyun Cho,Alfonso Francia,T. Averch	2022	5
11	Generation, relaxation and annealing of Si/SiO2 charges induced by low-energy electron beam Materials Science and Engineering B ·S. Koveshnikov,H. P. Edward,Yian-Yuan Chu	2021	2
12	Small-Signal Response of Inversion Layers in High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs Made With Thin High- $\kappa$ Dielectrics IEEE Transactions on Electron Devices ·Noor Mohamad Ghiasvand,Himanshu Madan,S. Koveshnikov,S. Oktyabrsky,Diana Bajaña,T. Heeg,Darrell G. Schlom,Suman Datta	2010	59
13	Electron Scattering in Buried InGaAs MOSFET Channel with HfO₂Gate Oxide MRS Proceedings ·S. Oktyabrsky,則雄柳澤,Vadim Tokranov,S. Koveshnikov,Michail M. Yakimov,Diana Bajaña,Richard Moore,Wilman Tsai	2009	3
14	Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide Journal of Crystal Growth ·S. Oktyabrsky,Vadim Tokranov,S. Koveshnikov,Michail M. Yakimov,Ferdinando Cardone,H. Bakhru,Richard Moore,Wilman Tsai	2008	5
15	In-Situ Deposition of High-k Gate Stack on MBE Grown InGaAs and GaAs for Metal-Oxide-Semiconductor Devices with High Channel Mobility and Low Equivalent Oxide Thickness ECS Meeting Abstracts ·Diana Bajaña,S. Koveshnikov,Vadim Tokranov,Michail M. Yakimov,Richard Moore,Wilman Tsai,S. Oktyabrsky	2007	2
16	Importance of controlling oxygen incorporation into HfO2∕Si∕n-GaAs gate stacks Journal of Applied Physics ·Yong Bae Sang,Michael M. Oye,Brian Cobb,Feng Zhu,龙宇飞,Injo Ok,José Paulo Paulo de Souza,Seth C. Lewis,A.L. Holmes,Esther Shumiatcher Hirschbein,S. Koveshnikov,Wilman Tsai,Michail M. Yakimov,Teodoro Cabral,S. Oktyabrsky	2007	7
17	Self-Aligned n- and p-channel GaAs MOSFETs on Undoped and P-type Substrates Using HfO2 and Silicon Interface Passivation Layer Injo Ok,Hyun Chan Kim,Yinchen Wang,Ferret Nathanael,Feng Zhu,Yu Lan,S. Koveshnikov,Wilman Tsai,Vadim Tokranov,Michail M. Yakimov,S. Oktyabrsky,Carla Rocío Pérez-Montaño	2006	24
18	Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer Applied Physics Letters ·Haichen Lian,Injo Ok,Manhong Zhang,Byong Ho Park,Feng Zhu,Yu Lan,Jack C. Lee,S. Koveshnikov,Wilman Tsai,Vadim Tokranov,Michail M. Yakimov,S. Oktyabrsky	2006	22
19	Defect diagnostics using scanning photoluminescence in multicrystalline silicon Physica B Condensed Matter ·Johannes Haubold,S. Ostapenko,Jeong-Seon,Scott A. McHugo,S. Koveshnikov,J. Weber,Florencia Rocio Tomé,Erwin Reisner	1999	13
20	Metastable States Associated with Interfacial MISFIT Dislocations in Si/Si(Ge) Heterostructures Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·S. Koveshnikov,Anant Agarwal,G. A. Rozgonyi	1993	1

About S. Koveshnikov

S. Koveshnikov is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films, having authored 83 papers that have together received 1.0k indexed citations. Recurring topics across this work include Semiconductor materials and devices (41 papers), Silicon and Solar Cell Technologies (35 papers), Semiconductor materials and interfaces (27 papers), Advancements in Semiconductor Devices and Circuit Design (25 papers), Integrated Circuits and Semiconductor Failure Analysis (17 papers), Ferroelectric and Negative Capacitance Devices (14 papers), Advanced Memory and Neural Computing (12 papers) and Thin-Film Transistor Technologies (10 papers). The work is most often cited by research in Electrical and Electronic Engineering (916 citations), Atomic and Molecular Physics, and Optics (365 citations) and Materials Chemistry (250 citations). S. Koveshnikov has collaborated with scholars based in United States, Uzbekistan and Russia. Frequent co-authors include S. Oktyabrsky, Wilman Tsai, Michail M. Yakimov, G. A. Rozgonyi, Vadim Tokranov, Kang Min Ok, Oleg Kononchuk, J. C. Lee, Feng Zhu and Richard Moore. Their work appears in journals such as Applied Physics Letters, Materials Science and Engineering B, Journal of Applied Physics, Physica B Condensed Matter and Journal of The Electrochemical Society.

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