Rahul Suri

669 total citations
12 papers, 282 citations indexed

About

Rahul Suri is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Condensed Matter Physics. According to data from OpenAlex, Rahul Suri has authored 12 papers receiving a total of 282 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 5 papers in Electronic, Optical and Magnetic Materials and 3 papers in Condensed Matter Physics. Recurrent topics in Rahul Suri's work include Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers) and Copper Interconnects and Reliability (3 papers). Rahul Suri is often cited by papers focused on Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers) and Copper Interconnects and Reliability (3 papers). Rahul Suri collaborates with scholars based in United States and India. Rahul Suri's co-authors include Veena Misra, Daniel J. Lichtenwalner, Bongmook Lee, Xiangyu Yang and J. C. Roberts and has published in prestigious journals such as Applied Physics Letters, IEEE Electron Device Letters and Semiconductor Science and Technology.

In The Last Decade

Rahul Suri

11 papers receiving 270 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Rahul Suri United States	9	261	103	98	74	61	12	282
Rathnait Long United States	8	338 1.3×	130 1.3×	151 1.5×	125 1.7×	89 1.5×	11	376
L. T. Tung Taiwan	9	337 1.3×	155 1.5×	56 0.6×	102 1.4×	92 1.5×	12	354
Sung‐Jae Chang South Korea	10	236 0.9×	47 0.5×	164 1.7×	88 1.2×	49 0.8×	47	282
Golnaz Karbasian United States	9	301 1.2×	181 1.8×	92 0.9×	66 0.9×	58 1.0×	17	359
C. H. Chern United States	9	267 1.0×	71 0.7×	97 1.0×	40 0.5×	112 1.8×	15	310
A. F. Basile Canada	10	282 1.1×	48 0.5×	100 1.0×	52 0.7×	136 2.2×	30	318
Susmita Basak United States	8	59 0.2×	115 1.1×	104 1.1×	45 0.6×	126 2.1×	12	253
Woojin Choi South Korea	6	155 0.6×	47 0.5×	149 1.5×	107 1.4×	14 0.2×	7	200
Yasunori Tateno Japan	12	292 1.1×	55 0.5×	244 2.5×	58 0.8×	83 1.4×	28	338

Countries citing papers authored by Rahul Suri

Since Specialization

Citations

This map shows the geographic impact of Rahul Suri's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Rahul Suri with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Rahul Suri more than expected).

Fields of papers citing papers by Rahul Suri

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Rahul Suri. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Rahul Suri. The network helps show where Rahul Suri may publish in the future.

Co-authorship network of co-authors of Rahul Suri

This figure shows the co-authorship network connecting the top 25 collaborators of Rahul Suri. A scholar is included among the top collaborators of Rahul Suri based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Rahul Suri. Rahul Suri is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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12 of 12 papers shown

Lee, Bongmook, et al.. (2013). Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation. Semiconductor Science and Technology. 28(7). 74004–74004. 30 indexed citations

Lee, Bongmook, et al.. (2012). Atomic Layer Deposition of $\hbox{SiO}_{2}$ for AlGaN/GaN MOS-HFETs. IEEE Electron Device Letters. 33(9). 1240–1242. 37 indexed citations

Lee, Bongmook, et al.. (2010). Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO<inf>2</inf> tunnel dielectrics. 20.6.1–20.6.4. 21 indexed citations

Misra, Veena, et al.. (2010). (Invited) Interface Investigation of ALD Dielectrics on III-N Substrates for RF, Mixed Signal and Power Applications. ECS Transactions. 28(1). 227–230. 1 indexed citations

Suri, Rahul, et al.. (2010). Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC. Applied Physics Letters. 96(4). 64 indexed citations

Suri, Rahul. (2010). Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors.. NCSU Libraries Repository (North Carolina State University Libraries). 9 indexed citations

Suri, Rahul, Daniel J. Lichtenwalner, & Veena Misra. (2010). Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates. Applied Physics Letters. 96(11). 51 indexed citations

Yang, Xiangyu, et al.. (2010). Ultimate scalability of TaN metal floating gate with incorporation of high-K blocking dielectrics for Flash memory applications. 5.3.1–5.3.4. 18 indexed citations

Suri, Rahul, Daniel J. Lichtenwalner, & Veena Misra. (2008). Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric. Applied Physics Letters. 92(24). 22 indexed citations

10.

Lichtenwalner, Daniel J., Rahul Suri, & Veena Misra. (2008). Effect of GaAs Surface Treatments on Lanthanum Silicate High-K Dielectric Gate Stack Properties. MRS Proceedings. 1073.

11.

Suri, Rahul, et al.. (2008). Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric. Applied Physics Letters. 93(19). 26 indexed citations

12.

Suri, Rahul, et al.. (2006). Threshold trimming based design of a CMOS programmable operational amplifier. 4 pp.–4 pp.. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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