Shadi Sabri

1.3k total citations
28 papers, 1.0k citations indexed

About

Shadi Sabri is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Shadi Sabri has authored 28 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 6 papers in Materials Chemistry and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Shadi Sabri's work include Silicon Carbide Semiconductor Technologies (18 papers), Semiconductor materials and devices (8 papers) and Graphene research and applications (6 papers). Shadi Sabri is often cited by papers focused on Silicon Carbide Semiconductor Technologies (18 papers), Semiconductor materials and devices (8 papers) and Graphene research and applications (6 papers). Shadi Sabri collaborates with scholars based in United States, China and Canada. Shadi Sabri's co-authors include Thomas Szkopek, Jonathan Guillemette, Mohamed Siaj, Richard Martel, Pierre L. Lévesque, Carla M. Aguirre, Abdeladim Guermoune, P. Desjardins, F. Popescu and H. S. Skulason and has published in prestigious journals such as Physical Review Letters, Nano Letters and Applied Physics Letters.

In The Last Decade

Shadi Sabri

27 papers receiving 1.0k citations

Peers

Countries citing papers authored by Shadi Sabri

Since Specialization

Citations

This map shows the geographic impact of Shadi Sabri's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shadi Sabri with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shadi Sabri more than expected).

Fields of papers citing papers by Shadi Sabri

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shadi Sabri. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shadi Sabri. The network helps show where Shadi Sabri may publish in the future.

Co-authorship network of co-authors of Shadi Sabri

This figure shows the co-authorship network connecting the top 25 collaborators of Shadi Sabri. A scholar is included among the top collaborators of Shadi Sabri based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shadi Sabri. Shadi Sabri is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Comparative analysis of maximum power point tracking methods for power optimization in grid tied photovoltaic solar systems 2025 ·Discover Applied Sciences ·(unknown), Akram A. Almohammedi, Mohammed Balfaqih, (unknown), Shadi Sabri	0
2	Investigation into Relationship of the Switching Performance and Short-Circuit Withstand Time on 1.2 kV 4H-SiC Power MOSFETs 2024 ·(unknown), Jae Hyung Park, Shadi Sabri, (unknown), Brett Hull, Sei‐Hyung Ryu	2
3	Investigation of the Short-Circuit Withstand Time and On-Resistance Trade-Off of 1.2 kV 4H-SiC Power MOSFETs 2024 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Jeff Kim, (unknown), Shadi Sabri, Brett Hull, Sei‐Hyung Ryu	1
4	High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes 2023 ·(unknown), (unknown), Jae Hyung Park, (unknown), (unknown), Shadi Sabri, Edward Van Brunt, Brett Hull, Daniel J. Lichtenwalner, D. A. Gajewski, John W. Palmour	4
5	Improvements to the Analytical Model to Describe UIS Events 2022 ·IEEE Transactions on Electron Devices ·Philipp Steinmann, Satyaki Ganguly, Brett Hull, (unknown), Daniel J. Lichtenwalner, Jae Hyung Park, (unknown), Jim Richmond, Sei‐Hyung Ryu, Shadi Sabri, (unknown), Edward Van Brunt, Elizabeth A. Williams	3
6	Accelerated Testing of SiC Power Devices under High-Field Operating Conditions 2020 ·Materials science forum ·Daniel J. Lichtenwalner, Shadi Sabri, Edward Van Brunt, Brett Hull, Sei‐Hyung Ryu, Philipp Steinmann, (unknown), Jae Hyung Park, Satyaki Ganguly, D. A. Gajewski, Jim Richmond, Scott T. Allen, John W. Palmour	2
7	Accelerated Testing of SiC Power Devices 2020 ·Daniel J. Lichtenwalner, Shadi Sabri, Edward Van Brunt, Brett Hull, Sei‐Hyung Ryu, Philipp Steinmann, (unknown), Satyaki Ganguly, D. A. Gajewski, Scott T. Allen, John W. Palmour	13
8	Reliability of SiC MOSFET with Danfoss Bond Buffer Technology in Automotive Traction Power Modules 2019 ·(unknown), Martin Becker, (unknown), Brett Hull, Shadi Sabri, Daniel J. Lichtenwalner, (unknown)	10
9	Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies 2019 ·Australian Journal of Electrical & Electronics Engineering ·(unknown), (unknown), Shadi Sabri, Nurul Fadzlin Hasbullah	1
10	Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers 2019 ·Materials science forum ·Daniel J. Lichtenwalner, Shadi Sabri, Edward Van Brunt, Brett Hull, Satyaki Ganguly, D. A. Gajewski, Scott T. Allen, John W. Palmour	13
11	15 kV n-GTOs in 4H-SiC 2019 ·Materials science forum ·Sei‐Hyung Ryu, Daniel J. Lichtenwalner, Michael O’Loughlin, Craig Capell, Jim Richmond, Edward Van Brunt, Charlotte Jonas, (unknown), Albert A. Burk, Brett Hull, (unknown), Shadi Sabri, Heather O’Brien, Aderinto Ogunniyi, Aivars J. Lelis, Jeff B. Casady, David Grider, Scott T. Allen, John W. Palmour	11
12	Reliability studies of SiC vertical power MOSFETs 2018 ·Daniel J. Lichtenwalner, Brett Hull, Edward Van Brunt, Shadi Sabri, D. A. Gajewski, D.E. Grider, Scott T. Allen, John W. Palmour, Akin Akturk, J.M. McGarrity	52
13	Effect of capacitive current on reverse recovery of body diode of 10kV SiC MOSFETs and external 10kV SiC JBS diodes 2017 ·(unknown), Kasunaidu Vechalapu, Subhashish Bhattacharya, Victor Veliadis, Edward Van Brunt, David Grider, Shadi Sabri, Brett Hull	18
14	New generation 6.5 kV SiC power MOSFET 2017 ·Shadi Sabri, Edward Van Brunt, Adam Barkley, Brett Hull, Michael O’Loughlin, (unknown), Scott T. Allen, John W. Palmour	58
15	Reliability assessment of a large population of 3.3 kV, 45 A 4H-SIC MOSFETs 2017 ·Edward Van Brunt, Daniel J. Lichtenwalner, Robert L. Leonard, (unknown), Shadi Sabri, Brett Hull, Scott T. Allen, John W. Palmour	23
16	Large area graphene ion sensitive field effect transistors with tantalum pentoxide sensing layers for pH measurement at the Nernstian limit 2014 ·Applied Physics Letters ·Ibrahim Fakih, Shadi Sabri, Farzaneh Mahvash, (unknown), Mohamed Siaj, Thomas Szkopek	16
17	Quantum Hall Effect in Hydrogenated Graphene 2013 ·Physical Review Letters ·Jonathan Guillemette, Shadi Sabri, (unknown), (unknown), Peter Gaskell, (unknown), Pierre L. Lévesque, Farzaneh Mahvash, Abdeladim Guermoune, Mohamed Siaj, Richard Martel, Thomas Szkopek, G. Gervais	26
18	Enhancing gas induced charge doping in graphene field effect transistors by non-covalent functionalization with polyethyleneimine 2012 ·Applied Physics Letters ·Shadi Sabri, Jonathan Guillemette, (unknown), Mohamed Siaj, Thomas Szkopek	9
19	Low-frequency noise and hysteresis in graphene field-effect transistors on oxide 2010 ·Micro & Nano Letters ·(unknown), Shadi Sabri, Thomas Szkopek	24
20	Probing Charge Transfer at Surfaces Using Graphene Transistors 2010 ·Nano Letters ·Pierre L. Lévesque, Shadi Sabri, Carla M. Aguirre, Jonathan Guillemette, Mohamed Siaj, P. Desjardins, Thomas Szkopek, Richard Martel	280

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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