T. E. Seidel

1.7k total citations
45 papers, 1.2k citations indexed

About

T. E. Seidel is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Computational Mechanics. According to data from OpenAlex, T. E. Seidel has authored 45 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 14 papers in Electronic, Optical and Magnetic Materials and 13 papers in Computational Mechanics. Recurrent topics in T. E. Seidel's work include Semiconductor materials and devices (21 papers), Silicon and Solar Cell Technologies (20 papers) and Copper Interconnects and Reliability (14 papers). T. E. Seidel is often cited by papers focused on Semiconductor materials and devices (21 papers), Silicon and Solar Cell Technologies (20 papers) and Copper Interconnects and Reliability (14 papers). T. E. Seidel collaborates with scholars based in United States, Germany and Australia. T. E. Seidel's co-authors include Ronald L. Meek, A. G. Cullis, J. S. Williams, R. G. Elliman, W. L. Brown, G. E. Becker, J. C. Bean, P. M. Petroff, C. S. Pai and Jian Li and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

T. E. Seidel

41 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. E. Seidel United States 18 1.0k 395 319 285 107 45 1.2k
Jyoji Nakata Japan 15 587 0.6× 330 0.8× 164 0.5× 346 1.2× 29 0.3× 54 788
M. Ghezzo United States 20 1.3k 1.3× 58 0.1× 349 1.1× 212 0.7× 147 1.4× 73 1.4k
B. Holländer Germany 23 1.4k 1.4× 97 0.2× 667 2.1× 510 1.8× 187 1.7× 81 1.7k
W.T. Pawlewicz United States 12 336 0.3× 101 0.3× 86 0.3× 286 1.0× 59 0.6× 29 560
H. H. Gilgen Switzerland 16 570 0.6× 190 0.5× 307 1.0× 137 0.5× 33 0.3× 44 964
Hideo Sunami Japan 12 452 0.4× 51 0.1× 137 0.4× 190 0.7× 63 0.6× 40 566
David Miller United States 15 317 0.3× 102 0.3× 259 0.8× 356 1.2× 49 0.5× 34 651
T. M. Bloomstein United States 16 472 0.5× 115 0.3× 131 0.4× 158 0.6× 127 1.2× 47 829
Yuki Kondo Japan 13 481 0.5× 301 0.8× 329 1.0× 260 0.9× 34 0.3× 43 952
A.W.R. Leitch South Africa 16 889 0.9× 67 0.2× 407 1.3× 524 1.8× 121 1.1× 122 1.2k

Countries citing papers authored by T. E. Seidel

Since Specialization
Citations

This map shows the geographic impact of T. E. Seidel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. E. Seidel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. E. Seidel more than expected).

Fields of papers citing papers by T. E. Seidel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. E. Seidel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. E. Seidel. The network helps show where T. E. Seidel may publish in the future.

Co-authorship network of co-authors of T. E. Seidel

This figure shows the co-authorship network connecting the top 25 collaborators of T. E. Seidel. A scholar is included among the top collaborators of T. E. Seidel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. E. Seidel. T. E. Seidel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhang, Zhihong, et al.. (2007). High Performance ALD Reactor for High-k Films. ECS Transactions. 3(15). 27–36. 1 indexed citations
2.
Karim, Zia, P. Lehnen, T. E. Seidel, et al.. (2007). AVD and MOCVD TaCN-based Films for Gate Metal Applications on High k Gate Dielectrics. ECS Transactions. 11(4). 557–567. 4 indexed citations
3.
Schumacher, M., P. K. Baumann, & T. E. Seidel. (2006). AVD and ALD as Two Complementary Technology Solutions for Next Generation Dielectric and Conductive Thin‐Film Processing. Chemical Vapor Deposition. 12(2-3). 99–108. 41 indexed citations
4.
Karim, Zia, Zhihong Zhang, Woong Park, et al.. (2006). Advanced Metal Gate Electrode Options Compatible with ALD and AVD® HfSiOx-Based Gate Dielectrics. ECS Transactions. 3(3). 363–374. 1 indexed citations
5.
Kim, Jaehwan, H. S. Jung, N. I. Lee, et al.. (2002). Mass Production Worthy HfO2-Al2O3 Laminates Capacitor Technology using Hf Liquid Precursor for sub-100 nm DRAMS. 7 indexed citations
7.
Vasudev, P.K., et al.. (1996). Advanced materials for low power electronics. Solid-State Electronics. 39(4). 489–497. 1 indexed citations
9.
Seidel, T. E., et al.. (1992). Status of Low-Dose Implantation for VLSI. MRS Bulletin. 17(6). 34–39. 8 indexed citations
10.
Seidel, T. E. & Christin Friedrich. (1992). Influence of shear rate and temperature on the crystallization of spontaneous crystallizing glass-ceramic. Journal of Materials Science. 27(1). 263–269. 4 indexed citations
11.
Seidel, T. E., et al.. (1989). A superconducting magnetic levitation device for the transport of light payloads. Journal of Superconductivity. 2(2). 211–218. 7 indexed citations
12.
Hodul, D., et al.. (1989). Rapid thermal annealing/chemical vapor deposition and integrated processing. 27 indexed citations
13.
Geva, M. & T. E. Seidel. (1986). Zn gettering in InGaAs/InP interfaces. Journal of Applied Physics. 59(7). 2408–2415. 18 indexed citations
14.
Seidel, T. E., et al.. (1985). A review of rapid thermal annealing (RTA) of B, BF 2 and As ions implanted into silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 7-8. 251–260. 104 indexed citations
15.
Williams, J. S., R. G. Elliman, W. L. Brown, & T. E. Seidel. (1985). Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous Silicon. Physical Review Letters. 55(14). 1482–1485. 171 indexed citations
16.
Hopkins, L. C., T. E. Seidel, J. S. Williams, & J. C. Bean. (1985). Enhanced Diffusion in Boron Implanted Silicon. Journal of The Electrochemical Society. 132(8). 2035–2036. 13 indexed citations
17.
Seidel, T. E.. (1983). Rapid thermal annealing of BF2+implanted, preamorphized silicon. IEEE Electron Device Letters. 4(10). 353–355. 64 indexed citations
18.
Cullis, A. G., T. E. Seidel, & Ronald L. Meek. (1978). Comparative study of annealed neon-, argon-, and krypton-ion implantation damage in silicon. Journal of Applied Physics. 49(10). 5188–5198. 91 indexed citations
19.
Seidel, T. E., et al.. (1976). Visible interference effects in silicon caused by high-current–high-dose implantation. Applied Physics Letters. 29(10). 648–651. 27 indexed citations
20.
Seidel, T. E., Ronald L. Meek, & A. G. Cullis. (1975). Direct comparison of ion−damage gettering and phosphorus−diffusion gettering of Au in Si. Journal of Applied Physics. 46(2). 600–609. 103 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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