S. U. Campisano

4.5k total citations
161 papers, 2.9k citations indexed

About

S. U. Campisano is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Materials Chemistry. According to data from OpenAlex, S. U. Campisano has authored 161 papers receiving a total of 2.9k indexed citations (citations by other indexed papers that have themselves been cited), including 126 papers in Electrical and Electronic Engineering, 78 papers in Computational Mechanics and 58 papers in Materials Chemistry. Recurrent topics in S. U. Campisano's work include Silicon and Solar Cell Technologies (94 papers), Ion-surface interactions and analysis (67 papers) and Thin-Film Transistor Technologies (44 papers). S. U. Campisano is often cited by papers focused on Silicon and Solar Cell Technologies (94 papers), Ion-surface interactions and analysis (67 papers) and Thin-Film Transistor Technologies (44 papers). S. U. Campisano collaborates with scholars based in Italy, United States and Netherlands. S. U. Campisano's co-authors include E. Rimini, G. Fóti, P. Baeri, S. Lombardo, V. Raineri, F. Priolo, S. Coffa, Albert Polman, G.N. van den Hoven and J. M. Poate and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

S. U. Campisano

156 papers receiving 2.7k citations

Peers

Countries citing papers authored by S. U. Campisano

Since Specialization

Citations

This map shows the geographic impact of S. U. Campisano's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. U. Campisano with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. U. Campisano more than expected).

Fields of papers citing papers by S. U. Campisano

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. U. Campisano. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. U. Campisano. The network helps show where S. U. Campisano may publish in the future.

Co-authorship network of co-authors of S. U. Campisano

This figure shows the co-authorship network connecting the top 25 collaborators of S. U. Campisano. A scholar is included among the top collaborators of S. U. Campisano based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. U. Campisano. S. U. Campisano is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Silicon-Based Microphotonics : from Basics to Applications, Varenna on Lake Como, Villa Monastero, 21-31 July 1998 1999 ·O. Bisi, S. U. Campisano, Lorenzo Pavesi, F. Priolo	26
2	Interstitial trapping efficiency of C+ implanted into preamorphised silicon — control of EOR defects 1997 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·F. Cristiano, Caroline Bonafos, A. Nejim, S. Lombardo, M. Omri, Daniel Alquier, A. Martínez, S. U. Campisano, P.L.F. Hemment, A. Claverie	21
3	Characterization of C coimplanted GexSi1−x epitaxial layers formed by high dose Ge ion implantation in (100) Si 1996 ·Journal of Applied Physics ·S. Lombardo, K. Kyllesbech Larsen, V. Raineri, Francesco La Via, S. U. Campisano, S. Lagomarsino, A. Kazimirov	5
4	Optical doping of materials by erbium ion implantation 1996 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·F. Priolo, G. Franzò, S. Coffa, Albert Polman, E. Snoeks, G.N. van den Hoven, Sebania Libertino, S. Lombardo, S. U. Campisano, A. Carnera	6
5	Ion-assisted crystallization in silicon: epitaxy and grain growth 1991 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·C. Spinella, F. Priolo, S. Lombardo, S. U. Campisano, E. Rimini	3
6	Early stages of grain growth in ion-irradiated amorphous silicon 1991 ·Physical Review Letters ·C. Spinella, S. Lombardo, S. U. Campisano	15
7	Radiation-enhanced diffusion of implanted impurities in amorphous Si 1989 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·F. Priolo, J. M. Poate, D. C. Jacobson, J. L. Batstone, S. U. Campisano	7
8	Control of Minority Carrier Lifetime by Gold Implantation in Semiconductor Devices 1989 ·Journal of The Electrochemical Society ·S. Coffa, L. Calcagno, S. U. Campisano, (unknown), G. Ferla	8
9	Optical study of high dose implanted, laser annealed silicon 1987 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·A. Borghesi, G. Guizzetti, L. Nosenzo, A. Stella, S. U. Campisano, E. Rimini	1
10	Fundamental optical properties of heavily-boron-doped silicon 1987 ·Physical review. B, Condensed matter ·A. Borghesi, (unknown), G. Guizzetti, L. Nosenzo, A. Stella, S. U. Campisano, E. Rimini, F. Cembali, M. Servidori	14
11	Interface and precipitation effects in solid phase epitaxy of Sb implanted amorphous Si 1985 ·Applied Physics Letters ·S. U. Campisano, J. M. Gibson, J. M. Poate	5
12	Amorphous and metastable phases formation in Au-Ge bilayers by ion beam mixing 1984 ·Applied Physics Letters ·(unknown), (unknown), E. Rimini, S. U. Campisano	4
13	Phase formation in Au-Al and Cu-Al thin-film systems under ion beam bombardment 1984 ·Journal of Applied Physics ·(unknown), S. U. Campisano, (unknown), E. Rimini	16
14	Ion-beam mixing in AuAl thin film bilayers 1983 ·Nuclear Instruments and Methods in Physics Research ·S. U. Campisano, (unknown), Alessandro Lo Giudice, E. Rimini	11
15	Depth profile studies of extended defects induced by ion implantation in Si and Al 1980 ·Radiation Effects ·S. T. Picraux, D.M. Follstaedt, P. Baeri, S. U. Campisano, G. Fóti, E. Rimini	25
16	Laser annealing of self-ion damaged silicon 1979 ·Applied Physics Letters ·G. Fóti, S. U. Campisano, P. Baeri, E. Rimini, W. F. Tseng	5
17	SiへのPbイオン打込みのチャネリングおよび反射高エネルギー電子回折(RHEED)解析 1978 ·S. U. Campisano, G. Ciavola, G. Vitali	3
18	Determination of oxygen and nitrogen in tantalum thin films by nuclear techniques and Auger spectroscopy 1978 ·Thin Solid Films ·G. Della Mea, P. Baeri, S. U. Campisano, (unknown)	2
19	Kinetics of the Initial Stage of Si Transport Through Pd‐Silicide for Epitaxial Growth 1975 ·Journal of The Electrochemical Society ·Z. L. Liau, S. U. Campisano, C. Canali, S.S. Lau, J. W. Mayer	14
20	Abstract: Application of MeV backscattering to thin film diffusion problems 1975 ·Journal of Vacuum Science and Technology ·S. U. Campisano, G. Fóti, F. Grasso, E. Rimini	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact