C. J. Hitzman

734 citations

22 papers · 607 indexed · h-index 9

Electrical and Electronic Engineering top 10%
Atomic and Molecular Physics, and Optics top 10%
Materials Chemistry
Biomedical Engineering
Condensed Matter Physics top 10%

Co-authors: Hai Lin James S. Harris T. I. Kamins Yijie Huo P.M. Enquist L.F. Eastman G. W. Wicks Paul C. McIntyre
Topics: Ion-surface interactions and analysis (12 papers)Electron and X-Ray Spectroscopy Techniques (9 papers)Integrated Circuits and Semiconductor Failure Analysis (7 papers)
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Surfaces, Coatings and Films
Journals: Nano Letters Applied Physics Letters Journal of Applied Physics
Partner nations: United States United Kingdom India

In The Last Decade

C. J. Hitzman

19 papers receiving 574 citations

Peers

Countries citing papers authored by C. J. Hitzman

Since Specialization

Citations

This map shows the geographic impact of C. J. Hitzman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. J. Hitzman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. J. Hitzman more than expected).

Fields of papers citing papers by C. J. Hitzman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. J. Hitzman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. J. Hitzman. The network helps show where C. J. Hitzman may publish in the future.

Co-authorship network of co-authors of C. J. Hitzman

This figure shows the co-authorship network connecting the top 25 collaborators of C. J. Hitzman. A scholar is included among the top collaborators of C. J. Hitzman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. J. Hitzman. C. J. Hitzman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO₂Resistance Switching Using Liquid Electrolyte Contacts 2017 ·Nano Letters ·Kechao Tang,Andrew C. Meng,Fei Hui,Yuanyuan Shi,Trevor A. Petach,C. J. Hitzman,Ai Leen Koh,David Goldhaber‐Gordon,Mario Lanza,Paul C. McIntyre	55
2	Interface trap evaluation of Pd/Al₂O₃/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen 2013 ·Applied Physics Letters ·R. D. Long,Christine M. Jackson,Jason Yang,Arash Hazeghi,C. J. Hitzman,(unknown),Aaron R. Arehart,Yoshio Nishi,T. P.,Steven A. Ringel,Paul C. McIntyre	55
3	Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy 2011 ·Applied Physics Letters ·(unknown),Hai Lin,Yijie Huo,C. J. Hitzman,T. I. Kamins,James S. Harris	218
4	Electron bombardment of films used for reducing spurious charge in electrostatic electron optics 2011 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Juan R. Maldonado,(unknown),C. J. Hitzman,Alan D. Brodie,(unknown),(unknown),M. A. McCord,William M. Tong,(unknown),P. Pianetta,(unknown),Apurva Mehta,Ritwik Bhatia	1
5	SIMS quantification of matrix and impurity species in AlxGa1−xN 2006 ·Applied Surface Science ·Chungang Gu,F. A. Stevie,C. J. Hitzman,(unknown),Mark A. Johnson,D. P. Griffis	14
6	Low energy electron induced X-ray emission spectrometry (LEXES) and secondary ion mass spectrometry (SIMS) sensitivity studies to ultra shallow arsenic implants 2005 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·H. Graoui,G. Conti,(unknown),(unknown),(unknown),M.A. Foad,(unknown),Jerry Hunter,C. J. Hitzman,C. A. Evans	2
7	Oxide thickness determination by XPS, AES, SIMS, RBS and TEM 2003 ·Jeffrey R. Shallenberger,David A. Cole,Steven W. Novak,Richard Moore,M. J. Edgell,Stephen P. Smith,C. J. Hitzman,(unknown),E. Principe,Surajit Biswas,(unknown),(unknown),K. S. Jones	17
8	A review of SIMS techniques for characterization of ultra low energy ion implants 2002 ·Stephen P. Smith,Victor K. F. Chia,C. J. Hitzman,(unknown)	6
9	SiO 2 thickness determination by x-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry 2000 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·David A. Cole,Jeffrey R. Shallenberger,Steven W. Novak,Richard Moore,M. J. Edgell,Stephen P. Smith,C. J. Hitzman,(unknown),E. Principe,(unknown),(unknown),Surajit Biswas,(unknown),K. S. Jones	83
10	Surface quantification by ion implantation through a removable layer 2000 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·F. A. Stevie,Robert Roberts,Jennifer McKinley,Manuel Decker,(unknown),(unknown),C. J. Hitzman	6
11	Ultra-shallow junction measurements: A review of SIMS approaches for annealed and processed wafers 1998 ·(unknown),Stephen P. Smith,C. J. Hitzman,Victor K. F. Chia,C. W. Magee	5
12	Multi-Technique Characterization of WSi_x films 1994 ·MRS Proceedings ·S. Baumann,C. J. Hitzman,(unknown),(unknown),(unknown)	0
13	Controlled substitutional doping of CdTe thin films grown by photoassisted molecular-beam epitaxy 1987 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·R. N. Bicknell,N. C. Giles,J. F. Schetzina,C. J. Hitzman	25
14	Quantitative Materials Analysis by Laser Microprobe Mass Analysis 1986 ·MRS Proceedings ·Robert W. Odom,C. J. Hitzman,B. Schueler	4
15	Atom and acceptor depth distributions for aluminum channeled in silicon as a function of ion energy and crystal orientation 1986 ·Journal of Applied Physics ·R. G. Wilson,D. M. Jamba,Paul K. Chu,(unknown),C. J. Hitzman	6
16	Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxy 1985 ·Journal of Applied Physics ·P.M. Enquist,G. W. Wicks,L.F. Eastman,C. J. Hitzman	95
17	Laser Microprobe Mass Analysis Of Materials 1984 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Robert W. Odom,C. J. Hitzman	1
18	Manganese and germanium redistribution in In0.53Ga0.47 As grown by molecular beam epitaxy 1983 ·Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·(unknown),T. Y. Chang,E. A. Caridi,C. A. Evans,C. J. Hitzman	2
19	Magnetic properties of RAlGa compounds 1982 ·Journal of Applied Physics ·L. R. Sill,C. J. Hitzman	1
20	Magnetic properties of some RAuGa intermetallic compounds 1981 ·Journal of Applied Physics ·L. R. Sill,C. J. Hitzman	2

About C. J. Hitzman

C. J. Hitzman is a scholar working on Surfaces, Coatings and Films, Computational Mechanics and Electrical and Electronic Engineering, having authored 22 papers that have together received 607 indexed citations. Recurring topics across this work include Ion-surface interactions and analysis (12 papers), Electron and X-Ray Spectroscopy Techniques (9 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (503 citations), Atomic and Molecular Physics, and Optics (242 citations) and Surfaces, Coatings and Films (51 citations). C. J. Hitzman has collaborated with scholars based in United States, United Kingdom and India. Frequent co-authors include Hai Lin, James S. Harris, T. I. Kamins, Yijie Huo, P.M. Enquist, L.F. Eastman, G. W. Wicks, Paul C. McIntyre, Stephen P. Smith and Steven W. Novak. Their work appears in journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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