C. J. Hitzman

734 total citations
22 papers, 607 citations indexed

About

C. J. Hitzman is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Surfaces, Coatings and Films. According to data from OpenAlex, C. J. Hitzman has authored 22 papers receiving a total of 607 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 12 papers in Computational Mechanics and 9 papers in Surfaces, Coatings and Films. Recurrent topics in C. J. Hitzman's work include Ion-surface interactions and analysis (12 papers), Electron and X-Ray Spectroscopy Techniques (9 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). C. J. Hitzman is often cited by papers focused on Ion-surface interactions and analysis (12 papers), Electron and X-Ray Spectroscopy Techniques (9 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). C. J. Hitzman collaborates with scholars based in United States, United Kingdom and India. C. J. Hitzman's co-authors include Hai Lin, James S. Harris, T. I. Kamins, Yijie Huo, P.M. Enquist, L.F. Eastman, G. W. Wicks, Paul C. McIntyre, Stephen P. Smith and Steven W. Novak and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

C. J. Hitzman

19 papers receiving 574 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. J. Hitzman United States 9 503 242 140 112 73 22 607
Akira Ohsawa Japan 15 538 1.1× 240 1.0× 204 1.5× 87 0.8× 42 0.6× 41 716
Katsunori Makihara Japan 12 496 1.0× 219 0.9× 338 2.4× 124 1.1× 70 1.0× 130 615
M. Alonso Spain 12 367 0.7× 411 1.7× 192 1.4× 71 0.6× 47 0.6× 40 636
A. Kalnitsky United States 13 529 1.1× 112 0.5× 186 1.3× 92 0.8× 28 0.4× 47 602
E. Wintersberger Austria 13 442 0.9× 418 1.7× 279 2.0× 298 2.7× 54 0.7× 24 694
A.H. Kean United Kingdom 16 385 0.8× 386 1.6× 171 1.2× 66 0.6× 89 1.2× 41 586
S. Esho Japan 10 299 0.6× 149 0.6× 146 1.0× 136 1.2× 44 0.6× 24 513
Mitsuhisa Ikeda Japan 13 554 1.1× 250 1.0× 406 2.9× 158 1.4× 64 0.9× 110 679
B. Dietrich Germany 14 640 1.3× 377 1.6× 332 2.4× 230 2.1× 45 0.6× 43 809
A. Czerwiński Poland 14 421 0.8× 180 0.7× 127 0.9× 70 0.6× 56 0.8× 72 540

Countries citing papers authored by C. J. Hitzman

Since Specialization
Citations

This map shows the geographic impact of C. J. Hitzman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. J. Hitzman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. J. Hitzman more than expected).

Fields of papers citing papers by C. J. Hitzman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. J. Hitzman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. J. Hitzman. The network helps show where C. J. Hitzman may publish in the future.

Co-authorship network of co-authors of C. J. Hitzman

This figure shows the co-authorship network connecting the top 25 collaborators of C. J. Hitzman. A scholar is included among the top collaborators of C. J. Hitzman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. J. Hitzman. C. J. Hitzman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tang, Kechao, Andrew C. Meng, Fei Hui, et al.. (2017). Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2Resistance Switching Using Liquid Electrolyte Contacts. Nano Letters. 17(7). 4390–4399. 55 indexed citations
2.
Long, R. D., Christine M. Jackson, Jason Yang, et al.. (2013). Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen. Applied Physics Letters. 103(20). 201607–201607. 55 indexed citations
3.
Lin, Hai, et al.. (2011). Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy. Applied Physics Letters. 99(18). 218 indexed citations
4.
Maldonado, Juan R., C. J. Hitzman, Alan D. Brodie, et al.. (2011). Electron bombardment of films used for reducing spurious charge in electrostatic electron optics. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(6). 06F317–06F317. 1 indexed citations
5.
Gu, Chungang, et al.. (2006). SIMS quantification of matrix and impurity species in AlxGa1−xN. Applied Surface Science. 252(19). 7228–7231. 14 indexed citations
6.
Graoui, H., G. Conti, M.A. Foad, et al.. (2005). Low energy electron induced X-ray emission spectrometry (LEXES) and secondary ion mass spectrometry (SIMS) sensitivity studies to ultra shallow arsenic implants. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 237(1-2). 336–340. 2 indexed citations
7.
Shallenberger, Jeffrey R., David A. Cole, Steven W. Novak, et al.. (2003). Oxide thickness determination by XPS, AES, SIMS, RBS and TEM. 1. 79–82. 17 indexed citations
8.
Smith, Stephen P., et al.. (2002). A review of SIMS techniques for characterization of ultra low energy ion implants. 599–602. 6 indexed citations
9.
Cole, David A., Jeffrey R. Shallenberger, Steven W. Novak, et al.. (2000). SiO 2 thickness determination by x-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(1). 440–444. 83 indexed citations
10.
Stevie, F. A., et al.. (2000). Surface quantification by ion implantation through a removable layer. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(1). 483–488. 6 indexed citations
11.
Smith, Stephen P., et al.. (1998). Ultra-shallow junction measurements: A review of SIMS approaches for annealed and processed wafers. 757–765. 5 indexed citations
12.
Baumann, S., et al.. (1994). Multi-Technique Characterization of WSix films. MRS Proceedings. 337.
13.
Bicknell, R. N., N. C. Giles, J. F. Schetzina, & C. J. Hitzman. (1987). Controlled substitutional doping of CdTe thin films grown by photoassisted molecular-beam epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 5(5). 3059–3063. 25 indexed citations
14.
Odom, Robert W., C. J. Hitzman, & B. Schueler. (1986). Quantitative Materials Analysis by Laser Microprobe Mass Analysis. MRS Proceedings. 69. 4 indexed citations
15.
Wilson, R. G., et al.. (1986). Atom and acceptor depth distributions for aluminum channeled in silicon as a function of ion energy and crystal orientation. Journal of Applied Physics. 60(8). 2806–2809. 6 indexed citations
16.
Enquist, P.M., G. W. Wicks, L.F. Eastman, & C. J. Hitzman. (1985). Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxy. Journal of Applied Physics. 58(11). 4130–4134. 95 indexed citations
17.
Odom, Robert W. & C. J. Hitzman. (1984). Laser Microprobe Mass Analysis Of Materials. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 458. 35–35. 1 indexed citations
18.
Chang, T. Y., et al.. (1983). Manganese and germanium redistribution in In0.53Ga0.47 As grown by molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 1(2). 178–181. 2 indexed citations
19.
Sill, L. R. & C. J. Hitzman. (1982). Magnetic properties of RAlGa compounds. Journal of Applied Physics. 53(3). 2448–2450. 1 indexed citations
20.
Sill, L. R. & C. J. Hitzman. (1981). Magnetic properties of some RAuGa intermetallic compounds. Journal of Applied Physics. 52(3). 2061–2063. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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