E. A. Caridi

625 total citations
14 papers, 513 citations indexed

About

E. A. Caridi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films. According to data from OpenAlex, E. A. Caridi has authored 14 papers receiving a total of 513 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 3 papers in Surfaces, Coatings and Films. Recurrent topics in E. A. Caridi's work include Semiconductor Quantum Structures and Devices (7 papers), Semiconductor materials and interfaces (3 papers) and Advancements in Semiconductor Devices and Circuit Design (3 papers). E. A. Caridi is often cited by papers focused on Semiconductor Quantum Structures and Devices (7 papers), Semiconductor materials and interfaces (3 papers) and Advancements in Semiconductor Devices and Circuit Design (3 papers). E. A. Caridi collaborates with scholars based in United States. E. A. Caridi's co-authors include T. Y. Chang, K.W. Goossen, L.F. Eastman, J. B. Stark, D. J. Olego, A. Pinczuk, T. Y. Chang, Robert Morgan, David A. B. Miller and M. A. Duguay and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

E. A. Caridi

14 papers receiving 483 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. A. Caridi United States 7 476 405 98 77 73 14 513
Z. Hang United States 8 395 0.8× 367 0.9× 114 1.2× 39 0.5× 51 0.7× 15 452
D. Bernklau Germany 9 433 0.9× 403 1.0× 91 0.9× 191 2.5× 90 1.2× 17 503
P.A. Claxton United Kingdom 15 543 1.1× 396 1.0× 104 1.1× 84 1.1× 52 0.7× 40 584
J. Nagle United States 12 251 0.5× 206 0.5× 140 1.4× 55 0.7× 45 0.6× 27 354
G. Lambert Denmark 10 219 0.5× 234 0.6× 114 1.2× 55 0.7× 41 0.6× 21 326
H. Thomas United Kingdom 12 275 0.6× 358 0.9× 65 0.7× 96 1.2× 32 0.4× 46 411
P. M. Mensz United States 11 402 0.8× 407 1.0× 153 1.6× 96 1.2× 29 0.4× 24 501
D. A. Bedarev Russia 13 628 1.3× 574 1.4× 185 1.9× 70 0.9× 41 0.6× 29 662
A. Sacedón Spain 13 408 0.9× 324 0.8× 103 1.1× 128 1.7× 69 0.9× 38 450
M. Hovinen United States 11 388 0.8× 399 1.0× 149 1.5× 65 0.8× 31 0.4× 30 453

Countries citing papers authored by E. A. Caridi

Since Specialization
Citations

This map shows the geographic impact of E. A. Caridi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. A. Caridi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. A. Caridi more than expected).

Fields of papers citing papers by E. A. Caridi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. A. Caridi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. A. Caridi. The network helps show where E. A. Caridi may publish in the future.

Co-authorship network of co-authors of E. A. Caridi

This figure shows the co-authorship network connecting the top 25 collaborators of E. A. Caridi. A scholar is included among the top collaborators of E. A. Caridi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. A. Caridi. E. A. Caridi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

14 of 14 papers shown
1.
Caridi, E. A. & J. B. Stark. (1992). Strain tensor elements for misfit-strained [hhk]-oriented cubic crystals. Applied Physics Letters. 60(12). 1441–1443. 32 indexed citations
2.
Caridi, E. A., T. Y. Chang, K.W. Goossen, & L.F. Eastman. (1990). Direct demonstration of a misfit strain-generated electric field in a [111] growth axis zinc-blende heterostructure. Applied Physics Letters. 56(7). 659–661. 183 indexed citations
3.
Goossen, K.W., E. A. Caridi, T. Y. Chang, et al.. (1990). Observation of room-temperature blue shift and bistability in a strained InGaAs-GaAs 〈111〉 self-electro-optic effect device. Applied Physics Letters. 56(8). 715–717. 93 indexed citations
4.
McKernan, S., J. G. Zhu, C. B. Carter, E. A. Caridi, & W. J. Schaff. (1988). Defects and Interfaces in GaAs Grown on Si. MRS Proceedings. 116. 2 indexed citations
5.
Liao, Andrew, B. Tell, R. F. Leheny, et al.. (1984). Electron transport in In0.53Ga0.47As/plasma oxide inversion layers. Applied Physics Letters. 44(3). 344–345. 4 indexed citations
6.
Caridi, E. A. & T. Y. Chang. (1984). Improved Techniques for Orientation of (100) InP and GaAs Wafers. Journal of The Electrochemical Society. 131(6). 1440–1441. 7 indexed citations
7.
Chang, T. Y., R. E. Behringer, Richard Howard, et al.. (1984). High transconductance InAlAs/InGaAs double heterostructure MESFETs with in-situ aluminum oxide gate barrier. 356–359. 1 indexed citations
8.
Liao, Andrew, et al.. (1984). Silicon Oxide enhanced Schottky gate In0.53Ga0.47As FET's with a self-aligned recessed gate structure. IEEE Electron Device Letters. 5(12). 511–514. 4 indexed citations
9.
Chang, T. Y., et al.. (1983). Manganese and germanium redistribution in In0.53Ga0.47 As grown by molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 1(2). 178–181. 2 indexed citations
10.
Chang, T. Y., et al.. (1983). Doping and electrical properties of Mn in In1−xyGaxAlyAs grown by molecular beam epitaxy. Journal of Applied Physics. 54(12). 6974–6981. 2 indexed citations
11.
Chang, T. Y., et al.. (1982). Junction field-effect transistors using In0.53Ga0.47As material grown by molecular beam epitaxy. IEEE Electron Device Letters. 3(3). 56–58. 9 indexed citations
12.
Olego, D. J., et al.. (1982). Compositional dependence of band-gap energy and conduction-band effective mass of In1−xyGaxAlyAs lattice matched to InP. Applied Physics Letters. 41(5). 476–478. 156 indexed citations
13.
Damen, T. C., J. Stone, J. M. Wiesenfeld, et al.. (1981). Optically pumped ultrashort cavity In_1−xGaxAsyP_1−y lasers: picosecond operation between 083 and 159 μm. Optics Letters. 6(11). 534–534. 17 indexed citations
14.
Wiesenfeld, J. M., J. Stone, A.G. Dentai, et al.. (1981). Picosecond Operation of Optically Pumped Ultrashort Cavity In1−x GaxAsyP1−y Lasers Between 0.83 µm and 1.59 µm. Conference on Lasers and Electro-Optics. 37. ThS4–ThS4. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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