D. J. Vitkavage

1.1k total citations · 1 hit paper
27 papers, 876 citations indexed

About

D. J. Vitkavage is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, D. J. Vitkavage has authored 27 papers receiving a total of 876 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in D. J. Vitkavage's work include Semiconductor materials and devices (15 papers), Ion-surface interactions and analysis (8 papers) and Thin-Film Transistor Technologies (6 papers). D. J. Vitkavage is often cited by papers focused on Semiconductor materials and devices (15 papers), Ion-surface interactions and analysis (8 papers) and Thin-Film Transistor Technologies (6 papers). D. J. Vitkavage collaborates with scholars based in United States. D. J. Vitkavage's co-authors include C. W. Jurgensen, Richard A. Gottscho, B.S. Meyerson, Ming L. Yu, T. M. Mayer, R. A. Rudder, R. J. Markunas, G. G. Fountain, S. V. Hattangady and E. A. Irene and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

D. J. Vitkavage

27 papers receiving 825 citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Microscopic uniformity in plasma etching

1992 482 citations Richard A. Gottscho, C. W. Jurgensen et al. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena profile →

Peers

Countries citing papers authored by D. J. Vitkavage

Since Specialization

Citations

This map shows the geographic impact of D. J. Vitkavage's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. J. Vitkavage with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. J. Vitkavage more than expected).

Fields of papers citing papers by D. J. Vitkavage

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. J. Vitkavage. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. J. Vitkavage. The network helps show where D. J. Vitkavage may publish in the future.

Co-authorship network of co-authors of D. J. Vitkavage

This figure shows the co-authorship network connecting the top 25 collaborators of D. J. Vitkavage. A scholar is included among the top collaborators of D. J. Vitkavage based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. J. Vitkavage. D. J. Vitkavage is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	In-situ Formation of a Copper Silicide Cap For TDDB and Electromigration Improvement 2006 ·Kalyan Kumar Chattopadhyay, (unknown), (unknown), Glenn Alers, (unknown), (unknown), Roey Shaviv, (unknown), D. J. Vitkavage, (unknown), (unknown), Robert Havemann	9
2	Non-Contact Cleaning Process for Post-CMP Copper 2005 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·(unknown), (unknown), D. J. Vitkavage, (unknown), (unknown), (unknown), (unknown), (unknown)	1
3	Bias voltage diagnostics during oxide etch in Drytek 384T 1993 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·S. C. McNevin, D. J. Vitkavage, (unknown)	4
4	Microscopic uniformity in plasma etching breakdown → 1992 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Richard A. Gottscho, C. W. Jurgensen, D. J. Vitkavage	482
5	Interface engineering with pseudormorphic interlayers: Ge metal-insulator-semiconductor structures 1990 ·Applied Physics Letters ·S. V. Hattangady, G. G. Fountain, R. A. Rudder, M. J. Mantini, D. J. Vitkavage, R. J. Markunas	12
6	Characterization of epitaxial Ge films grown by remote plasma enhanced chemical vapor deposition on Ge(111) and GaAs(111) substrates 1989 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·J. B. Posthill, R. A. Rudder, S. V. Hattangady, G. G. Fountain, D. J. Vitkavage, R. J. Markunas, N.R. Parikh, Niannian Yu	10
7	Gallium Arsenide Surface Inversion using a Novel Silicon–Silicon Dioxide Insulator Structure 1988 ·MRS Proceedings ·G. G. Fountain, R. A. Rudder, S. V. Hattangady, R. J. Markunas, D. J. Vitkavage	2
8	GaAs MIS structures with SiO ₂ using a thin silicon interlayer 1988 ·Electronics Letters ·G. G. Fountain, S. V. Hattangady, D. J. Vitkavage, R. A. Rudder, R. J. Markunas	55
9	Low temperature Si processing integrating surface preparation, homoepitaxial growth, and SiO2 deposition into an untrahigh vacuum compatible chamber 1988 ·AIP conference proceedings ·G. G. Fountain, R. A. Rudder, S. V. Hattangady, D. J. Vitkavage, R. J. Markunas	3
10	Electrical and microstructural characterisation of an ultrathin silicon interlayer used in a silicon dioxide/germanium-based MIS structure 1988 ·Electronics Letters ·G. G. Fountain, R. A. Rudder, S. V. Hattangady, D. J. Vitkavage, R. J. Markunas, J. B. Posthill	9
11	Plasma enhanced chemical vapor deposition of polycrystalline diamond and diamondlike films 1988 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·D. J. Vitkavage, R. A. Rudder, G. G. Fountain, R. J. Markunas	9
12	Heteroepitaxial Nucleation and Growth of Ge ON Si(100) Surfaces Using Remote Plasma Enhanced Chemical Vapor Deposition 1988 ·MRS Proceedings ·R. A. Rudder, S. V. Hattangady, D. J. Vitkavage, R. J. Markunas	2
13	Target contamination by cathode sputtering in broad beam ion sources 1988 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·D. J. Vitkavage, Thomas Mayer	4
14	In-Situ Surface Cleaning of Ge(111) and Si(100) for Epitaxial Growth of Ge AT 300°C Using Remote Plasma Enhanced Chemical Vapor Deposition 1987 ·MRS Proceedings ·S. V. Hattangady, R. A. Rudder, G. G. Fountain, D. J. Vitkavage, R. J. Markunas	6
15	Ion channeling studies of low energy ion bombardment induced crystal damage in silicon 1986 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·D. J. Vitkavage, C.J. Dale, W. K. Chu, T. G. Finstad, T. M. Mayer	12
16	Doping reaction of PH3 and B2H6 with Si(100) 1986 ·Journal of Applied Physics ·Ming L. Yu, D. J. Vitkavage, B.S. Meyerson	122
17	Optical Model for the Ellipsometric Characterization of Low Energy Ion Beam Damage in Single‐Crystal Silicon 1986 ·Journal of The Electrochemical Society ·(unknown), D. J. Vitkavage, E. A. Irene, T. M. Mayer	16
18	Residue formation on Si surfaces in a CHF3 discharge environment 1986 ·Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·D. J. Vitkavage, T. M. Mayer	18
19	SIMS study of ion assisted etching of Si by Cl2 1984 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·D. J. Vitkavage, M. S. Ameen, T. M. Mayer	10
20	Determination of Electroless Copper Deposition Rate from Polarization Data in the Vicinity of the Mixed Potential 1979 ·Journal of The Electrochemical Society ·Milan Paunović, D. J. Vitkavage	10

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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