F. A. Stevie

2.0k total citations
69 papers, 1.5k citations indexed

About

F. A. Stevie is a scholar working on Computational Mechanics, Electrical and Electronic Engineering and Surfaces, Coatings and Films. According to data from OpenAlex, F. A. Stevie has authored 69 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Computational Mechanics, 42 papers in Electrical and Electronic Engineering and 16 papers in Surfaces, Coatings and Films. Recurrent topics in F. A. Stevie's work include Ion-surface interactions and analysis (43 papers), Integrated Circuits and Semiconductor Failure Analysis (21 papers) and Semiconductor materials and devices (20 papers). F. A. Stevie is often cited by papers focused on Ion-surface interactions and analysis (43 papers), Integrated Circuits and Semiconductor Failure Analysis (21 papers) and Semiconductor materials and devices (20 papers). F. A. Stevie collaborates with scholars based in United States, Netherlands and Japan. F. A. Stevie's co-authors include Lucille A. Giannuzzi, R. B. Irwin, S. R. Brown, David S. Simons, B. I. Prenitzer, P. Chi, Harald Ade, Shane E. Harton, D. P. Griffis and B.W. Kempshall and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Analytical Chemistry.

In The Last Decade

F. A. Stevie

69 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. A. Stevie United States 20 802 567 482 304 237 69 1.5k
Tadashi Narusawa Japan 22 738 0.9× 560 1.0× 529 1.1× 659 2.2× 375 1.6× 97 1.6k
Shingo Ichimura Japan 22 1.2k 1.5× 450 0.8× 813 1.7× 542 1.8× 519 2.2× 183 2.0k
D. J. H. Cockayne Australia 22 600 0.7× 156 0.3× 906 1.9× 577 1.9× 158 0.7× 72 1.6k
E. E. Ehrichs United States 12 270 0.3× 464 0.8× 692 1.4× 307 1.0× 149 0.6× 19 1.3k
B. N. Dev India 25 1.0k 1.3× 575 1.0× 1.2k 2.5× 869 2.9× 243 1.0× 157 2.4k
K. Hojou Japan 24 501 0.6× 469 0.8× 1.1k 2.2× 233 0.8× 114 0.5× 140 1.7k
H.‐J. Fitting Germany 25 1.5k 1.8× 297 0.5× 1.3k 2.6× 362 1.2× 979 4.1× 120 2.5k
B. Jouffrey France 23 392 0.5× 172 0.3× 874 1.8× 423 1.4× 511 2.2× 100 1.8k
I. V. Kozhevnikov Russia 20 379 0.5× 224 0.4× 181 0.4× 241 0.8× 300 1.3× 126 1.2k
R. C. Birtcher United States 28 527 0.7× 1.0k 1.8× 1.9k 4.0× 191 0.6× 101 0.4× 154 2.6k

Countries citing papers authored by F. A. Stevie

Since Specialization
Citations

This map shows the geographic impact of F. A. Stevie's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. A. Stevie with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. A. Stevie more than expected).

Fields of papers citing papers by F. A. Stevie

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. A. Stevie. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. A. Stevie. The network helps show where F. A. Stevie may publish in the future.

Co-authorship network of co-authors of F. A. Stevie

This figure shows the co-authorship network connecting the top 25 collaborators of F. A. Stevie. A scholar is included among the top collaborators of F. A. Stevie based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. A. Stevie. F. A. Stevie is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Stevie, F. A.. (2016). Analysis of hydrogen in materials with and without high hydrogen mobility. Surface and Interface Analysis. 48(5). 310–314. 9 indexed citations
2.
Stevie, F. A., et al.. (2010). Secondary ion mass spectrometry characterization of anomalous behavior for low dose ion implanted phosphorus in silicon. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 28(3). 511–516. 2 indexed citations
3.
Reynolds, C. L., et al.. (2009). On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(). Applied Surface Science. 255(13-14). 6535–6539. 7 indexed citations
4.
Chow, Lee, et al.. (2006). Diffusion profiles of low dosages chromium ions implanted into (100) crystalline silicon. Materials Science in Semiconductor Processing. 9(1-3). 62–65. 2 indexed citations
5.
Harton, Shane E., F. A. Stevie, Ze‐Lin Zhu, & Harald Ade. (2006). Carbon-13 Labeled Polymers:  An Alternative Tracer for Depth Profiling of Polymer Films and Multilayers Using Secondary Ion Mass Spectrometry. Analytical Chemistry. 78(10). 3452–3460. 6 indexed citations
6.
Stoddard, Nathan, Gerd Duscher, Abdennaceur Karoui, F. A. Stevie, & G. A. Rozgonyi. (2005). Segregation and enhanced diffusion of nitrogen in silicon induced by low energy ion bombardment. Journal of Applied Physics. 97(8). 3 indexed citations
7.
Stevie, F. A., et al.. (2004). Improved charge neutralization method for depth profiling of bulk insulators using O2+ primary beam on a magnetic sector SIMS instrument. Applied Surface Science. 231-232. 786–790. 19 indexed citations
8.
Vartuli, C. B., et al.. (1999). Effect of Surface Roughness on STEM Samples Prepared by FIB. Microscopy and Microanalysis. 5(S2). 906–907. 1 indexed citations
9.
Giannuzzi, Lucille A., et al.. (1998). Applications of the FIB lift-out technique for TEM specimen preparation. Microscopy Research and Technique. 41(4). 285–290. 247 indexed citations
10.
Stevie, F. A., et al.. (1995). Applications of focused ion beams in microelectronics production, design and development. Surface and Interface Analysis. 23(2). 61–68. 58 indexed citations
11.
Hull, R., F. A. Stevie, & D. Bahnck. (1995). Observation of strong contrast from doping variations in transmission electron microscopy of InP-based semiconductor laser diodes. Applied Physics Letters. 66(3). 341–343. 12 indexed citations
12.
Stevie, F. A., et al.. (1994). Secondary ion mass spectrometry analysis of a three-level metal structure using sample rotation. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 12(4). 2363–2367. 4 indexed citations
13.
Hull, R., D. Bahnck, F. A. Stevie, L. A. Koszi, & S. N. G. Chu. (1993). Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging, and focused ion beam sputtering. Applied Physics Letters. 62(26). 3408–3410. 17 indexed citations
14.
15.
Stevie, F. A.. (1992). Secondary ion mass spectrometry analysis strategy for shallow junctions on test and product silicon wafers. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(1). 323–328. 9 indexed citations
16.
Stevie, F. A. & R. G. Wilson. (1991). Relative sensitivity factors for positive atomic and molecular ions sputtered from Si and GaAs. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 9(6). 3064–3070. 14 indexed citations
17.
Green, M. L., D. Brasen, M. Geva, et al.. (1990). Oxygen and carbon incorporation in low temperature epitaxial Si films grown by rapid thermal chemical vapor deposition (RTCVD). Journal of Electronic Materials. 19(10). 1015–1019. 4 indexed citations
18.
Swaminathan, V., M. T. Asom, G. Livescu, et al.. (1990). Hydrogen passivation of Si δ-doped GaAs grown by molecular beam epitaxy. Applied Physics Letters. 57(27). 2928–2930. 4 indexed citations
19.
Lum, R. M., et al.. (1988). 13C isotopic labeling studies of growth mechanisms in the metalorganic vapor phase epitaxy of GaAs. Journal of Crystal Growth. 93(1-4). 120–126. 41 indexed citations
20.
Chu, S. N. G., F. A. Stevie, Albert T. Macrander, et al.. (1985). Gallium Contamination of InP Epitaxial Layers in InP / InGaAsP Multilayer Structures Grown by Hydride Transport Vapor Phase Epitaxy. Journal of The Electrochemical Society. 132(5). 1187–1193. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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