R. D. Long

465 citations

16 papers · 394 indexed · h-index 10

Impact in

Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices

Papers in

Instrumentation 1
- Advanced Optical Sensing Technologies 1
Electrical and Electronic Engineering 15
- Semiconductor materials and devices 15
- Advanced Memory and Neural Computing 5
- Advancements in Semiconductor Devices and Circuit Design 4
- Ferroelectric and Negative Capacitance Devices 3

Co-authors: Paul K. Hurley Eileen O’Connor K. Cherkaoui Scott Monaghan Paul C. McIntyre G. Hughes Martyn E. Pemble Ian M. Povey
Journals: Applied Physics Letters (4 papers)Microelectronic Engineering (2 papers)Journal of Applied Physics (2 papers)Laser and Particle Beams (1 paper)Journal of The Electrochemical Society (1 paper)
Partner nations: Ireland United States Spain

In The Last Decade

R. D. Long

16 papers receiving 384 citations

Peers

Countries citing papers authored by R. D. Long

Since Specialization

Citations

This map shows the geographic impact of R. D. Long's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. D. Long with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. D. Long more than expected).

Fields of papers citing papers by R. D. Long

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. D. Long. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. D. Long. The network helps show where R. D. Long may publish in the future.

Co-authorship network

The 25 scholars most cited alongside R. D. Long, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with R. D. Long Line = papers co-authored together R. D. Long links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

16 of 16 papers shown

#	Work
1	Oxide Charge Engineering of Atomic Layer Deposited AlO_xN_y/Al₂O₃ Gate Dielectrics: A Path to Enhancement Mode GaN Devices ACS Applied Materials & Interfaces ·Sneha Maloth, Masaharu Kitano, R. D. Long, Paul C. McIntyre	2016	23
2	The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{InGaAs}$ MOS System IEEE Transactions on Device and Materials Reliability ·Paul K. Hurley, Éamon O’Connor, Vladimir Djara, Scott Monaghan, Ian M. Povey, R. D. Long, 권미라, Jun Lin, Paul C. McIntyre, Barry Brennan, Robert M. Wallace, Martyn E. Pemble, K. Cherkaoui	2013	36
3	Interface trap evaluation of Pd/Al₂O₃/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen Applied Physics Letters ·R. D. Long, Christine M. Jackson, Jason Yang, Arash Hazeghi, C. J. Hitzman, Joseph Alburqueque-Melgarejo, Aaron R. Arehart, Yoshio Nishi, T. P., Steven A. Ringel, Paul C. McIntyre	2013	55
4	Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors Journal of Applied Physics ·Gary W. Paterson, Anton Yanagisawa, M. Holland, Iain Thayne, Jin-Hyun Ahn, R. D. Long, Paul C. McIntyre, A. R. Long	2012	5
5	Charged Defect Quantification in Pt∕Al2O3∕In0.53Ga0.47As∕InP MOS Capacitors Journal of The Electrochemical Society ·R. D. Long, Yang Ku, Scott Monaghan, K. Cherkaoui, Joël Cagnon, Susanne Stemmer, Paul C. McIntyre, Paul K. Hurley	2011	31
6	Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition Journal of Applied Physics ·R. D. Long, Eileen O’Connor, S. B. Newcomb, Scott Monaghan, K. Cherkaoui, P. Casey, G. Hughes, Kevin Thomas, Puong Koh Hii, Ian M. Povey, Martyn E. Pemble, Paul K. Hurley	2009	24
7	Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods Applied Physics Letters ·Eileen O’Connor, Scott Monaghan, R. D. Long, Aileen O׳Mahony, Ian M. Povey, K. Cherkaoui, Martyn E. Pemble, Guy Brammertz, M. M. Heyns, S. B. Newcomb, V. V. Afanas’ev, Paul K. Hurley	2009	87
8	Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks Microelectronics Reliability ·E. Miranda, J. Martín-Martínez, Eileen O’Connor, G. Hughes, P. Casey, K. Cherkaoui, Scott Monaghan, R. D. Long, Dan O’Connell, Paul K. Hurley	2009	13
9	Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces Microelectronic Engineering ·P. Casey, Eileen O’Connor, R. D. Long, Barry Brennan, Sergey A. Krasnikov, Dan O’Connell, Paul K. Hurley, G. Hughes	2009	26
10	Degradation dynamics and breakdown of MgO gate oxides Microelectronic Engineering ·E. Miranda, Eileen O’Connor, G. Hughes, P. Casey, K. Cherkaoui, Scott Monaghan, R. D. Long, Donal O’Connell, Paul K. Hurley	2009	7
11	Electrical characterization of the soft breakdown failure mode in MgO layers Applied Physics Letters ·E. Miranda, Eileen O’Connor, K. Cherkaoui, Scott Monaghan, R. D. Long, Dan O’Connell, Paul K. Hurley, G. Hughes, P. Casey	2009	9
12	Post-breakdown conduction in metal gate/MgO/InP structures Cork Open Research Archive (University College Cork, Ireland) ·E. Miranda, Eileen O’Connor, G. Hughes, P. Casey, K. Cherkaoui, Scott Monaghan, R. D. Long, Dan O’Connell, Paul K. Hurley	2009	1
13	Soft breakdown in MgO dielectric layers Cork Open Research Archive (University College Cork, Ireland) ·E. Miranda, Eileen O’Connor, G. Hughes, P. Casey, K. Cherkaoui, Scott Monaghan, R. D. Long, Dan O’Connell, Paul K. Hurley	2009	7
14	Growth and characterisation of thin MgO layers on Si(100) surfaces Journal of Physics Conference Series ·P. Casey, G. Hughes, Eileen O’Connor, R. D. Long, Paul K. Hurley	2008	22
15	In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric Applied Physics Letters ·Eileen O’Connor, R. D. Long, K. Cherkaoui, Kevin Thomas, Puong Koh Hii, Ian M. Povey, Martyn E. Pemble, Paul K. Hurley, Barry Brennan, G. Hughes, S. B. Newcomb	2008	45
16	Development of X-ray streak camera electronics at AWRE Laser and Particle Beams ·Mark C. Jackson, R. D. Long, Édila Rosane Álves da Silva, N. J. Freeman	1986	3

About R. D. Long

R. D. Long is a scholar working on Instrumentation, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 16 papers that have together received 394 indexed citations. Recurring topics across this work include Semiconductor materials and devices (15 papers), Semiconductor materials and interfaces (5 papers), Advanced Memory and Neural Computing (5 papers), Advancements in Semiconductor Devices and Circuit Design (4 papers), Ferroelectric and Negative Capacitance Devices (3 papers), Electronic and Structural Properties of Oxides (3 papers), Copper Interconnects and Reliability (1 paper) and Advanced Optical Sensing Technologies (1 paper). The work is most often cited by research in Condensed Matter Physics (80 citations), Electrical and Electronic Engineering (348 citations), Atomic and Molecular Physics, and Optics (129 citations), Electronic, Optical and Magnetic Materials (66 citations) and Materials Chemistry (150 citations). R. D. Long has collaborated with scholars based in Ireland, United States and Spain. Frequent co-authors include Paul K. Hurley, Eileen O’Connor, K. Cherkaoui, Scott Monaghan, Paul C. McIntyre, G. Hughes, Martyn E. Pemble, Ian M. Povey, P. Casey and S. B. Newcomb. Their work appears in journals such as Applied Physics Letters, Microelectronic Engineering, Journal of Applied Physics, Laser and Particle Beams and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact