P.M. Enquist

1.2k total citations
48 papers, 902 citations indexed

About

P.M. Enquist is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, P.M. Enquist has authored 48 papers receiving a total of 902 indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Electrical and Electronic Engineering, 24 papers in Atomic and Molecular Physics, and Optics and 4 papers in Condensed Matter Physics. Recurrent topics in P.M. Enquist's work include Semiconductor Quantum Structures and Devices (20 papers), Semiconductor materials and devices (19 papers) and 3D IC and TSV technologies (16 papers). P.M. Enquist is often cited by papers focused on Semiconductor Quantum Structures and Devices (20 papers), Semiconductor materials and devices (19 papers) and 3D IC and TSV technologies (16 papers). P.M. Enquist collaborates with scholars based in United States, Germany and Brazil. P.M. Enquist's co-authors include G. G. Fountain, J.A. Hutchby, L.F. Eastman, T. J. de Lyon, G. W. Wicks, C. J. Hitzman, Qiaoling Tong, D.B. Slater, Quan Gan and Arthur S. Morris and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

P.M. Enquist

43 papers receiving 854 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
P.M. Enquist United States	18	816	500	99	98	72	48	902
G. Sarrabayrouse France	18	913 1.1×	189 0.4×	116 1.2×	46 0.5×	205 2.8×	123	1.0k
T.L.M. Scholtes Netherlands	15	655 0.8×	160 0.3×	197 2.0×	28 0.3×	136 1.9×	56	764
D. Cros France	18	1.0k 1.2×	394 0.8×	485 4.9×	33 0.3×	220 3.1×	119	1.2k
T. Morimoto Japan	15	1000 1.2×	400 0.8×	104 1.1×	14 0.1×	172 2.4×	68	1.1k
Masaru Shimada Japan	14	420 0.5×	174 0.3×	56 0.6×	38 0.4×	153 2.1×	48	531
G. Vergara Spain	14	380 0.5×	100 0.2×	185 1.9×	36 0.4×	254 3.5×	45	567
Dean Malta United States	17	667 0.8×	205 0.4×	126 1.3×	16 0.2×	387 5.4×	51	852
M. Schmid Germany	20	918 1.1×	406 0.8×	206 2.1×	19 0.2×	645 9.0×	106	1.2k
Takehiko Tawara Japan	21	977 1.2×	702 1.4×	265 2.7×	251 2.6×	414 5.8×	104	1.4k
К. Г. Батраков Belarus	15	282 0.3×	309 0.6×	179 1.8×	37 0.4×	289 4.0×	59	808

Countries citing papers authored by P.M. Enquist

Since Specialization

Citations

This map shows the geographic impact of P.M. Enquist's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.M. Enquist with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.M. Enquist more than expected).

Fields of papers citing papers by P.M. Enquist

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.M. Enquist. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.M. Enquist. The network helps show where P.M. Enquist may publish in the future.

Co-authorship network of co-authors of P.M. Enquist

This figure shows the co-authorship network connecting the top 25 collaborators of P.M. Enquist. A scholar is included among the top collaborators of P.M. Enquist based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P.M. Enquist. P.M. Enquist is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Enquist, P.M., et al.. (2022). A Review of 3-Dimensional Wafer Level Stacked Backside Illuminated CMOS Image Sensor Process Technologies. IEEE Transactions on Electron Devices. 69(6). 2766–2778. 10 indexed citations

Wang, Liang, G. G. Fountain, Bongsub Lee, et al.. (2017). Direct Bond Interconnect (DBI®) for Fine-Pitch Bonding in 3D and 2.5D Integrated Circuits. 22(1). 9 indexed citations

Deptuch, G., G. Carini, P.M. Enquist, et al.. (2015). Fully 3-D Integrated Pixel Detectors for X-Rays. IEEE Transactions on Electron Devices. 63(1). 205–214. 24 indexed citations

Enquist, P.M.. (2014). 3D integration applications for low temperature direct bond technology. 8–8. 1 indexed citations

Enquist, P.M.. (2012). Scalable direct bond technology and applications driving adoption. wp380. 1–5. 12 indexed citations

Tong, Qiaoling, Quan Gan, G. G. Fountain, et al.. (2004). Fluorine-enhanced low-temperature wafer bonding of native-oxide covered Si wafers. Applied Physics Letters. 85(17). 3731–3733. 18 indexed citations

Tong, Qiaoling, Quan Gan, G. G. Fountain, G. Hudson, & P.M. Enquist. (2004). Low-temperature bonding of silicon-oxide-covered wafers using diluted HF etching. Applied Physics Letters. 85(14). 2762–2764. 12 indexed citations

Paolella, A., et al.. (2002). Analytical model with empirical verification for heterojunction bipolar transistors under illumination. 1. 49–52.

Patrizi, Gary A., et al.. (1996). Multi-level interconnects for heterojunction bipolar transistor integrated circuit technologies. Thin Solid Films. 290-291. 435–439. 6 indexed citations

10.

Enquist, P.M., D.B. Slater, J.A. Hutchby, Arthur S. Morris, & R.J. Trew. (1993). Self-aligned AlGaAs/GaAs HBT with selectively regrown OMVPE emitter. IEEE Electron Device Letters. 14(6). 295–297. 8 indexed citations

11.

Malta, D.P., J. B. Posthill, P.M. Enquist, et al.. (1992). Low-Defect-Density Ge on Si for Large-Lattice-Mismatched Semiconductor Integration and Strain-Engineered Devices. MRS Proceedings. 263.

12.

Enquist, P.M.. (1992). Characterization and thermal instability of low-resistivity carbon doped GaAs grown by low-pressure organometallic vapor phase epitaxy. Journal of Applied Physics. 71(2). 704–708. 18 indexed citations

13.

Enquist, P.M., D.B. Slater, S. M. Vernon, et al.. (1992). High speed non-selfaligned InP/InGaAs Npn heterojunction bipolar transistor grown by low pressure metal organic vapour phase epitaxy. Electronics Letters. 28(9). 832–833. 2 indexed citations

14.

Slater, D.B., et al.. (1991). Millimeter-wave AlGaAs/GaAs p-n-p HBT. IEEE Electron Device Letters. 12(7). 382–384. 9 indexed citations

15.

Lyon, T. J. de, H. C. Casey, P.M. Enquist, J.A. Hutchby, & A. J. SpringThorpe. (1989). Surface recombination current and emitter compositional grading in N p n and P n p GaAs/AlxGa1−xAs heterojunction bipolar transistors. Applied Physics Letters. 54(7). 641–643. 18 indexed citations

16.

Enquist, P.M., et al.. (1989). Very high gain AlGaAs/GaAs pnp heterojunction bipolar transistor. Electronics Letters. 25(16). 1047–1048. 6 indexed citations

17.

Casey, H. C., et al.. (1988). DC performance of GaAs/Al/sub x/Ga/sub 1-x/As p-n-p heterojunction bipolar transistors grown by OMVPE. IEEE Transactions on Electron Devices. 35(8). 1389–1391. 6 indexed citations

18.

Enquist, P.M., et al.. (1987). Use of pseudomorphic GaInAs in Heterojunction Bipolar Transistors. Journal of Crystal Growth. 81(1-4). 378–382. 10 indexed citations

19.

Enquist, P.M., et al.. (1987). Lattice-strained heterojunction InGaAs/GaAs bipolar structures: Recombination properties and device performance. Journal of Applied Physics. 61(3). 1234–1236. 43 indexed citations

20.

Enquist, P.M., et al.. (1986). Heterojunction bipolar transistor using pseudomorphic GaInAs for the base. Applied Physics Letters. 49(3). 179–180. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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