A. St. Amour

1.3k total citations
16 papers, 478 citations indexed

About

A. St. Amour is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, A. St. Amour has authored 16 papers receiving a total of 478 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in A. St. Amour's work include Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and Semiconductor materials and interfaces (5 papers). A. St. Amour is often cited by papers focused on Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and Semiconductor materials and interfaces (5 papers). A. St. Amour collaborates with scholars based in United States, Canada and Taiwan. A. St. Amour's co-authors include James C. Sturm, M. L. W. Thewalt, Y. Lacroix, C. W. Liu, L. Lanzerotti, C. Wiegand, C. Auth, S. Ramey, Jason Clifford and Anisur Rahman and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Thin Solid Films.

In The Last Decade

A. St. Amour

15 papers receiving 462 citations

Peers

Countries citing papers authored by A. St. Amour

Since Specialization

Citations

This map shows the geographic impact of A. St. Amour's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. St. Amour with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. St. Amour more than expected).

Fields of papers citing papers by A. St. Amour

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. St. Amour. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. St. Amour. The network helps show where A. St. Amour may publish in the future.

Co-authorship network of co-authors of A. St. Amour

This figure shows the co-authorship network connecting the top 25 collaborators of A. St. Amour. A scholar is included among the top collaborators of A. St. Amour based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. St. Amour. A. St. Amour is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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16 of 16 papers shown

#	Work	Indexed citations
1	Intrinsic transistor reliability improvements from 22nm tri-gate technology 2013 ·S. Ramey, (unknown), C. Auth, Jason Clifford, M. Hattendorf, J. Hicks, R. James, Anisur Rahman, (unknown), A. St. Amour, C. Wiegand	137
2	Reliability characterization of 32nm high-K and Metal-Gate logic transistor technology 2010 ·Sangwoo Pae, Ashwin Ashok, (unknown), T. Ghani, Jun He, Seok‐Hee Lee, (unknown), Mark Liu, Ryan Lu, P. Packan, (unknown), (unknown), A. St. Amour, B. Woolery	46
3	Si/Si/sub 1-x-y/Ge/sub x/C/sub y/Si heterojunction bipolar transistors 2002 ·L. Lanzerotti, A. St. Amour, (unknown), James C. Sturm	0
4	Effect of carbon on the valence band offset of Si/sub 1-x-y/Ge/sub x/C/sub y//Si heterojunctions 2002 ·C. L. Chang, A. St. Amour, James C. Sturm	2
5	The effect of carbon on the valence band offset of compressively strained Si1−x−yGexCy/(100) Si heterojunctions 1997 ·Applied Physics Letters ·C. L. Chang, A. St. Amour, James C. Sturm	26
6	Co silicide formation on SiGeC/Si and SiGe/Si layers 1997 ·Applied Physics Letters ·R. A. Donaton, Karen Maex, A. Vantomme, G. Langouche, (unknown), A. St. Amour, James C. Sturm	45
7	Optical and electrical properties of Si1−x−yGexCy thin films and devices 1997 ·Thin Solid Films ·A. St. Amour, L. Lanzerotti, C. Chang, James C. Sturm	9
8	Effect of carbon on the valence band offset of Si1-x-yGexCy/Si heterojunctions 1996 ·C. L. Chang, A. St. Amour, James C. Sturm	1
9	Si/Si/sub 1-x-y/Ge_xC_y/Si heterojunction bipolar transistors 1996 ·IEEE Electron Device Letters ·L. Lanzerotti, A. St. Amour, (unknown), James C. Sturm, J. Watanabe, (unknown)	59
10	Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates 1996 ·Journal of Applied Physics ·C. W. Liu, A. St. Amour, James C. Sturm, Y. Lacroix, M. L. W. Thewalt, C. W. Magee, D. J. Eaglesham	26
11	Growth and Electrical Performance of Heterojunction P⁺ Si_1−x−yGe_xC_y/p⁺ Si Diodes 1995 ·MRS Proceedings ·C. L. Chang, A. St. Amour, L. Lanzerotti, James C. Sturm	5
12	Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1−x−yGexCy alloy layers on Si (100) 1995 ·Applied Physics Letters ·A. St. Amour, C. W. Liu, James C. Sturm, Y. Lacroix, M. L. W. Thewalt	76
13	Defect-Free Band-Edge Photoluminescence in SiGeC Strained Layers Grown by Rapid Thermal Chemical Vapor Deposition 1995 ·MRS Proceedings ·C. W. Liu, A. St. Amour, James C. Sturm, Y. Lacroix, M. L. W. Thewalt	1
14	Enhancement of high-temperature photoluminescence in strained Si1−xGex/Si heterostructures by surface passivation 1994 ·Applied Physics Letters ·A. St. Amour, James C. Sturm, Y. Lacroix, M. L. W. Thewalt	12
15	Deep photoluminescence in Si/Si1−xGex/Si quantum wells created by ion implantation and annealing 1994 ·Applied Physics Letters ·James C. Sturm, A. St. Amour, Y. Lacroix, M. L. W. Thewalt	17
16	High Temperature (77–300 K) Photo- and Electroluminescence in Si/Si_1-xGe_x Heterostructures 1994 ·Japanese Journal of Applied Physics ·James C. Sturm, A. St. Amour, (unknown), L. C. Lenchyshyn, M. L. W. Thewalt	16

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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