C. W. Liu

6.5k total citations
406 papers, 5.0k citations indexed

About

C. W. Liu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, C. W. Liu has authored 406 papers receiving a total of 5.0k indexed citations (citations by other indexed papers that have themselves been cited), including 365 papers in Electrical and Electronic Engineering, 130 papers in Materials Chemistry and 106 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in C. W. Liu's work include Semiconductor materials and devices (236 papers), Advancements in Semiconductor Devices and Circuit Design (160 papers) and Silicon Nanostructures and Photoluminescence (71 papers). C. W. Liu is often cited by papers focused on Semiconductor materials and devices (236 papers), Advancements in Semiconductor Devices and Circuit Design (160 papers) and Silicon Nanostructures and Photoluminescence (71 papers). C. W. Liu collaborates with scholars based in Taiwan, United States and China. C. W. Liu's co-authors include M. H. Lee, Chu-Hsuan Lin, Ming-Han Liao, S. Maikap, James C. Sturm, Ching‐Fuh Lin, Tzu‐Hurng Cheng, Johannes Sturm, Shu-Tong Chang and Yu Chen and has published in prestigious journals such as Nano Letters, ACS Nano and Applied Physics Letters.

In The Last Decade

C. W. Liu

379 papers receiving 4.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. W. Liu Taiwan 34 4.3k 1.9k 1.4k 1.3k 271 406 5.0k
T. Baron France 40 3.7k 0.9× 2.1k 1.1× 1.9k 1.4× 1.9k 1.5× 404 1.5× 255 5.0k
Hiroshi Iwai Japan 39 6.2k 1.4× 1.8k 0.9× 1.2k 0.9× 793 0.6× 499 1.8× 535 6.9k
Henry H. Radamson Sweden 32 2.5k 0.6× 1.1k 0.6× 996 0.7× 974 0.8× 240 0.9× 198 3.2k
Yi Xuan United States 42 5.1k 1.2× 1.4k 0.7× 3.6k 2.6× 1.2k 0.9× 523 1.9× 176 6.7k
Haiyan Ou Denmark 34 3.4k 0.8× 895 0.5× 2.0k 1.5× 576 0.4× 268 1.0× 208 4.3k
X. Wallart France 27 2.0k 0.5× 1.1k 0.6× 1.4k 1.0× 729 0.6× 149 0.5× 162 2.8k
Yoshinori Tanaka Japan 35 3.1k 0.7× 915 0.5× 2.7k 1.9× 928 0.7× 344 1.3× 139 4.4k
J. H. Stathis United States 44 6.3k 1.5× 2.0k 1.1× 622 0.4× 718 0.6× 468 1.7× 165 6.8k
Harun H. Solak Switzerland 31 1.8k 0.4× 3.1k 1.7× 825 0.6× 1.9k 1.4× 437 1.6× 85 5.0k
Philip X.‐L. Feng United States 37 3.8k 0.9× 2.4k 1.3× 3.8k 2.7× 2.4k 1.8× 313 1.2× 230 6.2k

Countries citing papers authored by C. W. Liu

Since Specialization
Citations

This map shows the geographic impact of C. W. Liu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. W. Liu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. W. Liu more than expected).

Fields of papers citing papers by C. W. Liu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. W. Liu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. W. Liu. The network helps show where C. W. Liu may publish in the future.

Co-authorship network of co-authors of C. W. Liu

This figure shows the co-authorship network connecting the top 25 collaborators of C. W. Liu. A scholar is included among the top collaborators of C. W. Liu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. W. Liu. C. W. Liu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ma, Rongwei, et al.. (2025). Amorphous In2O3 FeFET-like devices by interface dipoles. Applied Physics Letters. 126(11). 2 indexed citations
2.
Ma, Rongwei, et al.. (2024). Enhancements of electrical properties and positive bias instability in self-aligned top-gate a-IGZO TFTs by hydrogen incorporation. Semiconductor Science and Technology. 39(5). 55003–55003. 2 indexed citations
3.
Lee, Yu-Chieh, et al.. (2024). Intrinsic Gate Capacitance of Ultrathin Body Nanosheets Considering Quantum Effects. IEEE Transactions on Electron Devices. 71(4). 2271–2277. 2 indexed citations
4.
Chen, Yu-Rui, et al.. (2024). C-Axis Oriented HZO on Flat Amorphous TiN Achieving High Uniformity, Breakdown Field, Final 2Pr, and Endurance. IEEE Transactions on Electron Devices. 72(1). 222–227. 2 indexed citations
5.
Huang, Bo‐Wei, et al.. (2024). Strain Evolution in SiGe Nanosheet Transistor Process Flow. IEEE Transactions on Electron Devices. 71(5). 2907–2913. 4 indexed citations
6.
Liu, C. W., et al.. (2023). Mobility Enhancement of BCE-Type Amorphous InGaZnO TFTs Using Triple-Layer Channels. IEEE Transactions on Electron Devices. 70(8). 4194–4197. 1 indexed citations
7.
Chen, Yu-Rui, et al.. (2023). Fabrication and performance of highly stacked GeSi nanowire field effect transistors. Communications Engineering. 2(1). 4 indexed citations
8.
Chen, Yu-Rui, et al.. (2023). Engineering Hf0.5Zr0.5O2 Ferroelectric Tunnel Junctions With Amorphous WO x Bottom Electrodes Achieving High Remanent Polarization and Record Low-Operating Voltage. IEEE Transactions on Electron Devices. 70(10). 5022–5027. 10 indexed citations
9.
Huang, Bo‐Wei, et al.. (2022). Self-Heating of FinFET Circuitry Simulated by Multi-Correlated Recurrent Neural Networks. IEEE Electron Device Letters. 43(8). 1179–1182.
10.
Chen, Yu-Rui, et al.. (2022). ION Enhancement of Ge0.98Si0.02 Nanowire nFETs by High-κ Dielectrics. IEEE Electron Device Letters. 43(10). 1601–1604. 9 indexed citations
11.
Huang, Bo‐Wei, et al.. (2022). Experimental Demonstration of TreeFETs Combining Stacked Nanosheets and Low Doping Interbridges by Epitaxy and Wet Etching. IEEE Electron Device Letters. 43(5). 682–685. 25 indexed citations
12.
Chen, Yu-Rui, et al.. (2022). Multi-VT of Stacked GeSn Nanosheets by ALD WNxCy Work Function Metal. IEEE Transactions on Electron Devices. 69(7). 3611–3616.
13.
Liu, C. W., et al.. (2022). (Digital Presentation) Negative Bias Illumination Stress on a-Igzo TFT with a Top Barrier. ECS Meeting Abstracts. MA2022-02(35). 1259–1259. 1 indexed citations
14.
Liu, C. W., et al.. (2022). Self-Heating Mitigation of TreeFETs by Interbridges. IEEE Transactions on Electron Devices. 69(8). 4123–4128. 13 indexed citations
15.
Liu, C. W., et al.. (2022). (Digital Presentation) Diffusion and Segregation in Highly Stacked Ge0.9Sn0.1/Ge:B and Ge0.95Si0.05/Ge:P Epilayers. ECS Meeting Abstracts. MA2022-01(29). 1284–1284. 2 indexed citations
16.
Huang, Bo‐Wei, et al.. (2021). Highly Stacked GeSi Nanosheets and Nanowires by Low-Temperature Epitaxy and Wet Etching. IEEE Transactions on Electron Devices. 68(12). 6599–6604. 11 indexed citations
17.
Liu, C. W., Jia‐Min Shieh, Chih‐Huang Lai, et al.. (2021). Thermally Robust Perpendicular SOT-MTJ Memory Cells With STT-Assisted Field-Free Switching. IEEE Transactions on Electron Devices. 68(12). 6623–6628. 10 indexed citations
18.
Liu, C. W., et al.. (2020). Low Contact Resistivity to Ge Using In-Situ B and Sn Incorporation by Chemical Vapor Deposition. IEEE Transactions on Electron Devices. 67(11). 5053–5058. 7 indexed citations
19.
Liu, C. W., et al.. (2020). Optical Detection of Parasitic Channels of Vertically Stacked Ge0.98Si0.02 nGAAFETs. IEEE Transactions on Electron Devices. 67(10). 4073–4078. 2 indexed citations
20.
Liu, C. W., et al.. (2019). Write Margin Analysis of Spin–Orbit Torque Switching Using Field-Assisted Method. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits. 5(2). 173–181. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026