L. C. Lenchyshyn

844 total citations
23 papers, 621 citations indexed

About

L. C. Lenchyshyn is a scholar working on Materials Chemistry, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, L. C. Lenchyshyn has authored 23 papers receiving a total of 621 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Materials Chemistry, 17 papers in Atomic and Molecular Physics, and Optics and 17 papers in Electrical and Electronic Engineering. Recurrent topics in L. C. Lenchyshyn's work include Silicon Nanostructures and Photoluminescence (18 papers), Semiconductor Quantum Structures and Devices (16 papers) and Nanowire Synthesis and Applications (6 papers). L. C. Lenchyshyn is often cited by papers focused on Silicon Nanostructures and Photoluminescence (18 papers), Semiconductor Quantum Structures and Devices (16 papers) and Nanowire Synthesis and Applications (6 papers). L. C. Lenchyshyn collaborates with scholars based in Canada and United States. L. C. Lenchyshyn's co-authors include James C. Sturm, M. L. W. Thewalt, D. C. Houghton, N. L. Rowell, J.-P. Noël, Hari C. Manoharan, X. Xiao, M. L. W. Thewalt, C. W. Liu and M. Buchanan and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

L. C. Lenchyshyn

21 papers receiving 587 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. C. Lenchyshyn Canada 12 474 453 433 173 19 23 621
L. Müller‐Kirsch Germany 11 407 0.9× 518 1.1× 263 0.6× 67 0.4× 40 2.1× 16 536
Z. Hang United States 8 367 0.8× 395 0.9× 114 0.3× 51 0.3× 39 2.1× 15 452
M. O. Tanner United States 11 338 0.7× 215 0.5× 99 0.2× 94 0.5× 9 0.5× 19 388
C. Lacelle Canada 10 284 0.6× 360 0.8× 88 0.2× 43 0.2× 37 1.9× 35 382
Mototsugu Ogura Japan 12 396 0.8× 339 0.7× 187 0.4× 43 0.2× 16 0.8× 44 462
Z. F. Krasilnik Russia 12 333 0.7× 288 0.6× 309 0.7× 113 0.7× 45 2.4× 64 446
Jean-Michel Hartmann France 12 380 0.8× 258 0.6× 104 0.2× 84 0.5× 10 0.5× 31 424
P.A. Claxton United Kingdom 15 396 0.8× 543 1.2× 104 0.2× 52 0.3× 84 4.4× 40 584
P. M. Koenraad Netherlands 13 300 0.6× 434 1.0× 188 0.4× 75 0.4× 47 2.5× 25 475
M. Hovinen United States 11 399 0.8× 388 0.9× 149 0.3× 31 0.2× 65 3.4× 30 453

Countries citing papers authored by L. C. Lenchyshyn

Since Specialization
Citations

This map shows the geographic impact of L. C. Lenchyshyn's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. C. Lenchyshyn with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. C. Lenchyshyn more than expected).

Fields of papers citing papers by L. C. Lenchyshyn

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. C. Lenchyshyn. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. C. Lenchyshyn. The network helps show where L. C. Lenchyshyn may publish in the future.

Co-authorship network of co-authors of L. C. Lenchyshyn

This figure shows the co-authorship network connecting the top 25 collaborators of L. C. Lenchyshyn. A scholar is included among the top collaborators of L. C. Lenchyshyn based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. C. Lenchyshyn. L. C. Lenchyshyn is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lenchyshyn, L. C., et al.. (1996). Voltage-tuning in multi-color quantum well infrared photodetector stacks. Journal of Applied Physics. 79(10). 8091–8097. 23 indexed citations
2.
Lenchyshyn, L. C., et al.. (1995). Mid-wavelength infrared detection with InxGa1-xAs/Al0.45Ga0.55As multiple quantum well structures. Semiconductor Science and Technology. 10(1). 45–48. 12 indexed citations
3.
Steiner, T., L. C. Lenchyshyn, M. L. W. Thewalt, et al.. (1994). Visible photoluminescence from biexcitons in Si1-xGex quantum wells. Solid State Communications. 89(5). 429–432. 17 indexed citations
4.
Rowell, N. L., et al.. (1993). Exciton luminescence in Si1−xGex/Si heterostructures grown by molecular beam epitaxy. Journal of Applied Physics. 74(4). 2790–2805. 41 indexed citations
5.
Steiner, T., L. C. Lenchyshyn, M. L. W. Thewalt, et al.. (1993). Visible Photoluminescence from SI1-xGEx Quantum Wells. MRS Proceedings. 298. 2 indexed citations
6.
Sturm, James C., et al.. (1993). Luminescence Processes in Si1-xGex/Si Heterostructures Grown by Chemical Vapor Deposition. MRS Proceedings. 298. 1 indexed citations
7.
Lenchyshyn, L. C., M. L. W. Thewalt, D. C. Houghton, et al.. (1993). Photoluminescence of Thin SI1-xGEx Quantum Wells. MRS Proceedings. 298. 3 indexed citations
8.
Lenchyshyn, L. C., M. L. W. Thewalt, D. C. Houghton, et al.. (1993). Photoluminescence mechanisms in thinSi1xGexquantum wells. Physical review. B, Condensed matter. 47(24). 16655–16658. 24 indexed citations
9.
Lenchyshyn, L. C., M. L. W. Thewalt, James C. Sturm, et al.. (1993). Photoluminescence spectroscopy of localized excitons in Si1−xGex. Journal of Electronic Materials. 22(2). 233–238. 11 indexed citations
10.
Lenchyshyn, L. C., M. L. W. Thewalt, James C. Sturm, & X. Xiao. (1993). Photoluminescence study of vertical transport inSi1xGex/Si heterostructures. Physical review. B, Condensed matter. 47(24). 16659–16662. 3 indexed citations
11.
Lenchyshyn, L. C., M. L. W. Thewalt, James C. Sturm, et al.. (1992). High quantum efficiency photoluminescence from localized excitons in Si1−xGex. Applied Physics Letters. 60(25). 3174–3176. 57 indexed citations
12.
Sturm, J. C., X. Xiao, Peter Schwartz, et al.. (1992). Band-edge exciton luminescence from Si/strained Si1−xGex/Si structures. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(4). 1998–2001. 8 indexed citations
13.
Xiao, X., et al.. (1992). Room-temperature 1.3- and 1.5- mu m electroluminescence from Si/Si/sub 1-x/Ge/sub x/ quantum wells. IEEE Transactions on Electron Devices. 39(11). 2678–2678.
14.
Sturm, J. C., et al.. (1992). VIB-7 Roam-Temperature 1 .Iand 1.5-pm Electro- luminescence from Si/Sil - xGex Quantum Wells-Q..
15.
Xiao, X., et al.. (1992). Room-temperature 1.3 μm electroluminescence from strained Si1−xGex/Si quantum wells. Applied Physics Letters. 60(25). 3177–3179. 44 indexed citations
16.
Xiao, X., C. W. Liu, James C. Sturm, L. C. Lenchyshyn, & M. L. W. Thewalt. (1992). Photoluminescence from electron-hole plasmas confined in Si/Si1−xGex/Si quantum wells. Applied Physics Letters. 60(14). 1720–1722. 44 indexed citations
17.
Xiao, X., C. W. Liu, James C. Sturm, et al.. (1992). Quantum confinement effects in strained silicon-germanium alloy quantum wells. Applied Physics Letters. 60(17). 2135–2137. 55 indexed citations
18.
Sturm, James C., Peter Schwartz, Hari C. Manoharan, et al.. (1991). Well-Resolved Band-Edge Photoluminescence from Strained Si1–xGex Layers Grown by Rapid Thermal Chemical Vapor Deposition. MRS Proceedings. 220. 2 indexed citations
19.
Steele, A G, L. C. Lenchyshyn, & M. L. W. Thewalt. (1990). Photoluminescence study of nitrogen-oxygen donors in silicon. Applied Physics Letters. 56(2). 148–150. 15 indexed citations
20.
Masut, R. A., A. P. Roth, Jan J. Dubowski, & L. C. Lenchyshyn. (1986). Characterisation of CdTe/GaAs heterojunctions with photovoltage measurements. Semiconductor Science and Technology. 1(3). 226–229. 4 indexed citations

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