X. Xiao

576 total citations
23 papers, 385 citations indexed

About

X. Xiao is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, X. Xiao has authored 23 papers receiving a total of 385 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 15 papers in Materials Chemistry and 13 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in X. Xiao's work include Silicon Nanostructures and Photoluminescence (13 papers), Semiconductor Quantum Structures and Devices (8 papers) and Semiconductor materials and devices (7 papers). X. Xiao is often cited by papers focused on Silicon Nanostructures and Photoluminescence (13 papers), Semiconductor Quantum Structures and Devices (8 papers) and Semiconductor materials and devices (7 papers). X. Xiao collaborates with scholars based in United States, Canada and China. X. Xiao's co-authors include James C. Sturm, L. C. Lenchyshyn, C. W. Liu, Peter Schwartz, M. L. W. Thewalt, P.M. Garone, E.J. Prinz, M. L. W. Thewalt, Peter Fejes and R. B. Gregory and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

X. Xiao

21 papers receiving 374 citations

Peers

X. Xiao
A. St. Amour United States
Frank Tutu United Kingdom
S. Bodnar France
Gaurav Thareja United States
W.Y. Loh Singapore
P. Kozlowski United States
Ganesh Samudra Singapore
R. Jakomin Brazil
Yves Mols Belgium
A. St. Amour United States
X. Xiao
Citations per year, relative to X. Xiao X. Xiao (= 1×) peers A. St. Amour

Countries citing papers authored by X. Xiao

Since Specialization
Citations

This map shows the geographic impact of X. Xiao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by X. Xiao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites X. Xiao more than expected).

Fields of papers citing papers by X. Xiao

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by X. Xiao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by X. Xiao. The network helps show where X. Xiao may publish in the future.

Co-authorship network of co-authors of X. Xiao

This figure shows the co-authorship network connecting the top 25 collaborators of X. Xiao. A scholar is included among the top collaborators of X. Xiao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with X. Xiao. X. Xiao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hong, Wei, Xiaohong Chen, X. Xiao, et al.. (2025). Mo-doping induced band structures regulation in oxygen vacancies-rich Bi4O5Br2 nanosheets for improved visible-light photocatalysis. Applied Surface Science. 690. 162603–162603. 4 indexed citations
2.
Xiao, X., et al.. (2024). Oxygen vacancy-rich SnO2/CdIn2S4 heterojunction with self-primed multi-cycle amplification for sensitive ctDNA detection. Sensors and Actuators B Chemical. 425. 136979–136979. 3 indexed citations
3.
Xiao, X., Xiaohong Chen, Xiao Yang, et al.. (2024). Enhancing the Built-in Electric Field in Oxygen Vacancies-Enriched I-Doped Bi3O4Cl for Visible Light-Driven Photocatalytic Oxidation. Inorganic Chemistry. 64(1). 627–637. 1 indexed citations
4.
Ullrich, B., X. Xiao, & Gail J. Brown. (2010). Photoluminescence of PbS quantum dots on semi-insulating GaAs. Journal of Applied Physics. 108(1). 22 indexed citations
5.
Higgs, V., E C Lightowlers, X. Xiao, & James C. Sturm. (1994). Characterization of Si/Si1−xGex/Si quantum wells by cathodoluminescence imaging and spectroscopy. Applied Physics Letters. 64(5). 607–609. 3 indexed citations
6.
Xiao, X., et al.. (1994). Schottky barrier heights of Pt and Ir silicides formed on Si/SiGe measured by internal photoemission. Journal of Applied Physics. 75(10). 5160–5164. 17 indexed citations
7.
Sturm, James C., et al.. (1993). Luminescence Processes in Si1-xGex/Si Heterostructures Grown by Chemical Vapor Deposition. MRS Proceedings. 298. 1 indexed citations
8.
Steiner, T., L. C. Lenchyshyn, M. L. W. Thewalt, et al.. (1993). Visible Photoluminescence from SI1-xGEx Quantum Wells. MRS Proceedings. 298. 2 indexed citations
9.
Lenchyshyn, L. C., M. L. W. Thewalt, D. C. Houghton, et al.. (1993). Photoluminescence mechanisms in thinSi1xGexquantum wells. Physical review. B, Condensed matter. 47(24). 16655–16658. 24 indexed citations
10.
Xiao, X., J. C. Sturm, S. A. Lyon, et al.. (1993). Modeling of parasitic barrier effects in silicide/Si1−xGex Schottky-barrier infrared detectors fabricated with a silicon sacrificial layer. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(3). 1168–1171. 3 indexed citations
11.
Lenchyshyn, L. C., M. L. W. Thewalt, D. C. Houghton, et al.. (1993). Photoluminescence of Thin SI1-xGEx Quantum Wells. MRS Proceedings. 298. 3 indexed citations
12.
Lenchyshyn, L. C., M. L. W. Thewalt, James C. Sturm, & X. Xiao. (1993). Photoluminescence study of vertical transport inSi1xGex/Si heterostructures. Physical review. B, Condensed matter. 47(24). 16659–16662. 3 indexed citations
13.
Liu, C. W., et al.. (1993). Symmetric Si/Si1−xGex electron resonant tunneling diodes with an anomalous temperature behavior. Applied Physics Letters. 62(6). 603–605. 10 indexed citations
14.
Xiao, X., et al.. (1992). Room-temperature 1.3- and 1.5- mu m electroluminescence from Si/Si/sub 1-x/Ge/sub x/ quantum wells. IEEE Transactions on Electron Devices. 39(11). 2678–2678.
15.
Xiao, X., C. W. Liu, James C. Sturm, et al.. (1992). Quantum confinement effects in strained silicon-germanium alloy quantum wells. Applied Physics Letters. 60(17). 2135–2137. 55 indexed citations
16.
Sturm, J. C., X. Xiao, Peter Schwartz, et al.. (1992). Band-edge exciton luminescence from Si/strained Si1−xGex/Si structures. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(4). 1998–2001. 8 indexed citations
17.
Xiao, X., et al.. (1992). Room-temperature 1.3 μm electroluminescence from strained Si1−xGex/Si quantum wells. Applied Physics Letters. 60(25). 3177–3179. 44 indexed citations
18.
Xiao, X., C. W. Liu, James C. Sturm, L. C. Lenchyshyn, & M. L. W. Thewalt. (1992). Photoluminescence from electron-hole plasmas confined in Si/Si1−xGex/Si quantum wells. Applied Physics Letters. 60(14). 1720–1722. 44 indexed citations
19.
Prinz, E.J., P.M. Garone, Peter Schwartz, X. Xiao, & James C. Sturm. (1991). The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors. IEEE Electron Device Letters. 12(2). 42–44. 83 indexed citations
20.
Xiao, X.. (1989). THE EFFECT OF BASE-EMITTER SPACERS AND STRAIN-DEPENDENT DENSITIES OF STATES IN SijSil_xGex /Si HETEROJUNCTION BIPOLAR TRANSISTORS.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026