L. Lanzerotti

909 total citations
23 papers, 335 citations indexed

About

L. Lanzerotti is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surgery. According to data from OpenAlex, L. Lanzerotti has authored 23 papers receiving a total of 335 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 5 papers in Atomic and Molecular Physics, and Optics and 1 paper in Surgery. Recurrent topics in L. Lanzerotti's work include Advancements in Semiconductor Devices and Circuit Design (13 papers), Semiconductor materials and devices (11 papers) and Electrostatic Discharge in Electronics (10 papers). L. Lanzerotti is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (13 papers), Semiconductor materials and devices (11 papers) and Electrostatic Discharge in Electronics (10 papers). L. Lanzerotti collaborates with scholars based in United States and Taiwan. L. Lanzerotti's co-authors include James C. Sturm, Steven H. Voldman, A. St. Amour, J. Dunn, Temel Büyüklimanli, E.A. Stach, C. W. Magee, R. Hull, Alvin Joseph and J. Watanabe and has published in prestigious journals such as Applied Physics Letters, Proceedings of the IEEE and Thin Solid Films.

In The Last Decade

L. Lanzerotti

21 papers receiving 289 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. Lanzerotti United States 10 328 81 21 15 10 23 335
J. Adkisson United States 10 181 0.6× 43 0.5× 16 0.8× 9 0.6× 11 1.1× 28 189
K. Schonenberg United States 10 338 1.0× 72 0.9× 46 2.2× 10 0.7× 16 1.6× 22 349
E. Ohue Japan 14 484 1.5× 113 1.4× 47 2.2× 21 1.4× 11 1.1× 49 487
P. Scheer France 11 374 1.1× 53 0.7× 35 1.7× 22 1.5× 7 0.7× 43 390
G. Guégan France 11 444 1.4× 95 1.2× 49 2.3× 37 2.5× 8 0.8× 67 468
Jichai Jeong South Korea 12 314 1.0× 115 1.4× 23 1.1× 9 0.6× 12 1.2× 27 339
C. Kerner Belgium 11 347 1.1× 63 0.8× 40 1.9× 26 1.7× 8 0.8× 33 360
A. Chinthakindi United States 9 251 0.8× 42 0.5× 62 3.0× 6 0.4× 5 0.5× 10 255
C Bulucea United States 10 330 1.0× 67 0.8× 31 1.5× 26 1.7× 9 0.9× 30 342
P. Rossel France 12 525 1.6× 82 1.0× 18 0.9× 24 1.6× 20 2.0× 81 550

Countries citing papers authored by L. Lanzerotti

Since Specialization
Citations

This map shows the geographic impact of L. Lanzerotti's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Lanzerotti with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Lanzerotti more than expected).

Fields of papers citing papers by L. Lanzerotti

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Lanzerotti. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Lanzerotti. The network helps show where L. Lanzerotti may publish in the future.

Co-authorship network of co-authors of L. Lanzerotti

This figure shows the co-authorship network connecting the top 25 collaborators of L. Lanzerotti. A scholar is included among the top collaborators of L. Lanzerotti based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Lanzerotti. L. Lanzerotti is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Dunn, J., D.L. Harame, Alvin Joseph, et al.. (2006). SiGe BiCMOS Trends ¿Today and Tomorrow. 39. 695–702. 6 indexed citations
2.
Joseph, Alvin, D.L. Harame, B. Jagannathan, et al.. (2005). Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS. Proceedings of the IEEE. 93(9). 1539–1558. 53 indexed citations
3.
Lanzerotti, L., M. Dahlstrǒm, Michael S. Gordon, et al.. (2005). Collector optimization in advanced SiGe HBT technologies. 4 pp.–4 pp.. 3 indexed citations
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7.
Gallagher, Matt, M. J. Rice, L. Lanzerotti, et al.. (2003). Effects of in-situ arsenic-doped amorphous silicon emitter process on SiGe heterojunction bipolar transistors. 352–358.
8.
Lanzerotti, L., et al.. (2002). Si/Si/sub 1-x-y/Ge/sub x/C/sub y/Si heterojunction bipolar transistors. 60. 930–932.
9.
Voldman, Steven H., et al.. (2002). Silicon germanium heterojunction bipolar transistor electrostatic discharge power clamps and the Johnson Limit in RF BICMOS SiGe technology. Journal of Electrostatics. 56(3). 341–362. 2 indexed citations
10.
Voldman, Steven H., J. Schmidt, Rob Johnson, et al.. (2002). Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors. 239–250. 23 indexed citations
11.
Lanzerotti, L., J. C. Sturm, E.A. Stach, et al.. (2002). Suppression of boron outdiffusion in SiGe HBTs by carbon incorporation. 249–252. 31 indexed citations
12.
Voldman, Steven H., et al.. (2002). Test methods, test techniques and failure criteria for evaluation of ESD degradation of analog and radio frequency (RF) technology. 92–100. 10 indexed citations
13.
Voldman, Steven H., Rob Johnson, L. Lanzerotti, et al.. (2002). ESD robustness of a BiCMOS SiGe technology. 214–217. 13 indexed citations
14.
Voldman, Steven H., L. Lanzerotti, & Rob Johnson. (2002). Emitter base junction ESD reliability of an epitaxial base silicon germanium heterojunction bipolar transistor. 79–84. 10 indexed citations
15.
Voldman, Steven H., L. Lanzerotti, & Rob Johnson. (2001). Influence of process and device design on ESD sensitivity of a Silicon Germanium heterojunction bipolar transistor. 362–370. 8 indexed citations
16.
Carroll, Malcolm S., L. Lanzerotti, & James C. Sturm. (1998). Quantitative Measurement of Reduction of Boron Diffusion by Substitutional Carbon Incorporation. MRS Proceedings. 527. 6 indexed citations
17.
Lanzerotti, L., James C. Sturm, E.A. Stach, et al.. (1997). Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation. Applied Physics Letters. 70(23). 3125–3127. 38 indexed citations
18.
Amour, A. St., L. Lanzerotti, C. Chang, & James C. Sturm. (1997). Optical and electrical properties of Si1−x−yGexCy thin films and devices. Thin Solid Films. 294(1-2). 112–117. 9 indexed citations
19.
Lanzerotti, L., et al.. (1996). Si/Si/sub 1-x-y/GexCy/Si heterojunction bipolar transistors. IEEE Electron Device Letters. 17(7). 334–337. 59 indexed citations
20.
Chang, C. L., A. St. Amour, L. Lanzerotti, & James C. Sturm. (1995). Growth and Electrical Performance of Heterojunction P+ Si1−x−yGexCy/p+ Si Diodes. MRS Proceedings. 402. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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