Ganesh Samudra

714 total citations
33 papers, 567 citations indexed

About

Ganesh Samudra is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Ganesh Samudra has authored 33 papers receiving a total of 567 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 9 papers in Materials Chemistry. Recurrent topics in Ganesh Samudra's work include Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers) and Semiconductor materials and interfaces (6 papers). Ganesh Samudra is often cited by papers focused on Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers) and Semiconductor materials and interfaces (6 papers). Ganesh Samudra collaborates with scholars based in Singapore, United States and China. Ganesh Samudra's co-authors include Yee‐Chia Yeo, Won Jong Yoo, Lap Chan, Dim‐Lee Kwong, N. Balasubramanian, Grace Huiqi Wang, Eng-Huat Toh, Subhranu Samanta, L. K. Bera and Guo‐Qiang Lo and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Ganesh Samudra

32 papers receiving 549 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ganesh Samudra Singapore 15 546 165 118 64 18 33 567
C. D’Emic United States 11 605 1.1× 197 1.2× 115 1.0× 49 0.8× 39 2.2× 15 630
Ming Zhu Singapore 12 324 0.6× 80 0.5× 113 1.0× 59 0.9× 11 0.6× 40 343
R. Jammy United States 11 414 0.8× 104 0.6× 87 0.7× 78 1.2× 36 2.0× 32 439
A. St. Amour United States 10 460 0.8× 106 0.6× 196 1.7× 44 0.7× 10 0.6× 16 478
Weiping Bai United States 13 710 1.3× 206 1.2× 161 1.4× 70 1.1× 22 1.2× 36 745
Clément Porret Belgium 12 320 0.6× 131 0.8× 147 1.2× 114 1.8× 17 0.9× 78 404
J. Penaud Belgium 10 354 0.6× 136 0.8× 157 1.3× 57 0.9× 22 1.2× 31 372
Paul Vande Voorde United States 11 537 1.0× 84 0.5× 103 0.9× 29 0.5× 24 1.3× 25 555
Sylvain Maine France 9 227 0.4× 125 0.8× 104 0.9× 117 1.8× 19 1.1× 15 335
M.F. Li Singapore 11 598 1.1× 110 0.7× 69 0.6× 45 0.7× 29 1.6× 20 612

Countries citing papers authored by Ganesh Samudra

Since Specialization
Citations

This map shows the geographic impact of Ganesh Samudra's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ganesh Samudra with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ganesh Samudra more than expected).

Fields of papers citing papers by Ganesh Samudra

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ganesh Samudra. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ganesh Samudra. The network helps show where Ganesh Samudra may publish in the future.

Co-authorship network of co-authors of Ganesh Samudra

This figure shows the co-authorship network connecting the top 25 collaborators of Ganesh Samudra. A scholar is included among the top collaborators of Ganesh Samudra based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ganesh Samudra. Ganesh Samudra is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Da, Haixia, et al.. (2012). Graphene Nanoribbon Tunneling Field-Effect Transistors With a Semiconducting and a Semimetallic Heterojunction Channel. IEEE Transactions on Electron Devices. 59(5). 1454–1461. 4 indexed citations
2.
Chin, Hock-Chun, et al.. (2008). Source and Drain Series Resistance Reduction for N-Channel Transistors Using Solid Antimony (Sb) Segregation (SSbS) During Silicidation. IEEE Electron Device Letters. 29(7). 756–758. 3 indexed citations
3.
Low, Tony, Ming Fu Li, W. J. Fan, et al.. (2008). Pseudo-potential band structure calculation of InSb ultra-thin films and its application to assess the n-metal-oxide-semiconductor transistor performance. Semiconductor Science and Technology. 23(2). 25009–25009. 5 indexed citations
4.
Ang, Kah‐Wee, King-Jien Chui, Chih-Hang Tung, et al.. (2007). Enhanced Carrier Transport in Strained Bulk N-MOSFETs with Silicon-Carbon Source/Drain Stressors. National University of Singapore. 1–2. 1 indexed citations
5.
Wang, Yingqian, Wan Sik Hwang, Gang Zhang, et al.. (2007). Electrical Characteristics of Memory Devices With a High-$k$$\hbox{HfO}_{2}$ Trapping Layer and Dual $\hbox{SiO}_{2}/\hbox{Si}_{3}\hbox{N}_{4}$ Tunneling Layer. IEEE Transactions on Electron Devices. 54(10). 2699–2705. 37 indexed citations
6.
Toh, Eng-Huat, Grace Huiqi Wang, Lap Chan, et al.. (2007). Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region. IEEE Transactions on Electron Devices. 54(10). 2778–2785. 32 indexed citations
7.
Toh, Eng-Huat, Grace Huiqi Wang, Ming Zhu, et al.. (2007). Impact Ionization Nanowire Transistor with Multiple-Gates, Silicon-Germanium Impact Ionization Region, and Sub-5 mV/decade Subtheshold Swing. National University of Singapore. 195–198. 9 indexed citations
8.
Chan, Lap, et al.. (2007). Sub-0.1-eV Effective Schottky-Barrier Height for NiSi on n-Type Si (100) Using Antimony Segregation. IEEE Electron Device Letters. 28(8). 703–705. 39 indexed citations
9.
Toh, Eng-Huat, Grace Huiqi Wang, Guo‐Qiang Lo, et al.. (2007). A Strained N-channel Impact-ionization MOS (I-MOS) Transistor with Elevated Silicon-Carbon Source/Drain for Performance Enhancement. National University of Singapore. 1–2. 2 indexed citations
10.
11.
Toh, Eng-Huat, Grace Huiqi Wang, Guo‐Qiang Lo, et al.. (2006). A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor. 951–954. 19 indexed citations
12.
Ang, Kah‐Wee, King-Jien Chui, Vladimir Bliznetsov, et al.. (2006). Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancement. 497–500. 24 indexed citations
13.
Chui, King-Jien, Kah‐Wee Ang, Huiqi Wang, et al.. (2006). Source/drain germanium condensation for p-channel strained ultra-thin body transistors. 86. 493–496. 4 indexed citations
14.
Samanta, Subhranu, Pawan Kumar Singh, Won Jong Yoo, et al.. (2006). Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals. 170–173. 24 indexed citations
15.
Low, Tony, et al.. (2006). Modeling Study of InSb Thin Film For Advanced III-V MOSFET Applications. National University of Singapore. 1–4. 6 indexed citations
16.
Low, Tony, M. F. Li, Ganesh Samudra, et al.. (2005). Modeling Study of the Impact of Surface Roughness on Silicon and Germanium UTB MOSFETs. IEEE Transactions on Electron Devices. 52(11). 2430–2439. 30 indexed citations
17.
Wang, Yingqian, et al.. (2005). Simulation of trapping properties of high κ material as the charge storage layer for flash memory application. Thin Solid Films. 504(1-2). 209–212. 3 indexed citations
18.
Yang, Tianzhi, Chen Shen, C. H. Ang, et al.. (2005). Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric. IEEE Electron Device Letters. 26(10). 758–760. 33 indexed citations
19.
Singh, Navab, et al.. (2004). A FinFET and Tri-gate MOSFET's channel structure patterning and its influence on the device performance. Thin Solid Films. 462-463. 1–5. 7 indexed citations
20.
Chen, Jianhui, Won Jong Yoo, Yee‐Chia Yeo, et al.. (2004). Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded in HfAlO High-<tex>$kappa$</tex>Tunneling and Control Oxides: Device Fabrication and Electrical Performance. IEEE Transactions on Electron Devices. 51(11). 1840–1848. 84 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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