Ganesh Samudra

714 citations

33 papers · 567 indexed · h-index 15

Co-authors: Yee‐Chia Yeo Won Jong Yoo Lap Chan Dim‐Lee Kwong N. Balasubramanian Grace Huiqi Wang Eng-Huat Toh Subhranu Samanta
Topics: Semiconductor materials and devices (27 papers)Advancements in Semiconductor Devices and Circuit Design (24 papers)Semiconductor materials and interfaces (6 papers)
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Materials Chemistry
Journals: Applied Physics Letters Journal of Applied Physics IEEE Transactions on Electron Devices
Partner nations: Singapore United States China

In The Last Decade

Ganesh Samudra

32 papers receiving 549 citations

Peers

Countries citing papers authored by Ganesh Samudra

Since Specialization

Citations

This map shows the geographic impact of Ganesh Samudra's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ganesh Samudra with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ganesh Samudra more than expected).

Fields of papers citing papers by Ganesh Samudra

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ganesh Samudra. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ganesh Samudra. The network helps show where Ganesh Samudra may publish in the future.

Co-authorship network of co-authors of Ganesh Samudra

This figure shows the co-authorship network connecting the top 25 collaborators of Ganesh Samudra. A scholar is included among the top collaborators of Ganesh Samudra based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ganesh Samudra. Ganesh Samudra is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Graphene Nanoribbon Tunneling Field-Effect Transistors With a Semiconducting and a Semimetallic Heterojunction Channel 2012 ·IEEE Transactions on Electron Devices ·Haixia Da,Kai‐Tak Lam,Ganesh Samudra,(unknown),Gengchiau Liang	4
2	Source and Drain Series Resistance Reduction for N-Channel Transistors Using Solid Antimony (Sb) Segregation (SSbS) During Silicidation 2008 ·IEEE Electron Device Letters ·(unknown),(unknown),Hock-Chun Chin,Lap Chan,Ganesh Samudra,Yee‐Chia Yeo	3
3	Pseudo-potential band structure calculation of InSb ultra-thin films and its application to assess the n-metal-oxide-semiconductor transistor performance 2008 ·Semiconductor Science and Technology ·(unknown),Tony Low,Ming Fu Li,W. J. Fan,Ping Bai,D. L. Kwong,Ganesh Samudra	5
4	Enhanced Carrier Transport in Strained Bulk N-MOSFETs with Silicon-Carbon Source/Drain Stressors 2007 ·National University of Singapore ·Kah‐Wee Ang,King-Jien Chui,Chih-Hang Tung,Ganesh Samudra,N. Balasubramanian,Yee‐Chia Yeo	1
5	Electrical Characteristics of Memory Devices With a High-$k$$\hbox{HfO}_{2}$ Trapping Layer and Dual $\hbox{SiO}_{2}/\hbox{Si}_{3}\hbox{N}_{4}$ Tunneling Layer 2007 ·IEEE Transactions on Electron Devices ·Yingqian Wang,Wan Sik Hwang,Gang Zhang,Ganesh Samudra,Yee‐Chia Yeo,Won Jong Yoo	37
6	Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region 2007 ·IEEE Transactions on Electron Devices ·Eng-Huat Toh,Grace Huiqi Wang,Lap Chan,Guo‐Qiang Lo,Ganesh Samudra,Yee‐Chia Yeo	32
7	Impact Ionization Nanowire Transistor with Multiple-Gates, Silicon-Germanium Impact Ionization Region, and Sub-5 mV/decade Subtheshold Swing 2007 ·National University of Singapore ·Eng-Huat Toh,Grace Huiqi Wang,Ming Zhu,Chen Shen,Lap Chan,Guo‐Qiang Lo,(unknown),Dennis Sylvester,Chun-Huat Heng,Ganesh Samudra,Yee‐Chia Yeo	9
8	Sub-0.1-eV Effective Schottky-Barrier Height for NiSi on n-Type Si (100) Using Antimony Segregation 2007 ·IEEE Electron Device Letters ·(unknown),Lap Chan,Ganesh Samudra,(unknown)	39
9	A Strained N-channel Impact-ionization MOS (I-MOS) Transistor with Elevated Silicon-Carbon Source/Drain for Performance Enhancement 2007 ·National University of Singapore ·Eng-Huat Toh,Grace Huiqi Wang,Guo‐Qiang Lo,(unknown),Lap Chan,Ganesh Samudra,Yee‐Chia Yeo	2
10	Schottky Barrier Height Modulation for Nickel Silicide on n-Si (100) using Antimony (Sb) Segregation 2007 ·(unknown),Lap Chan,Ganesh Samudra,Yee‐Chia Yeo	1
11	A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor 2006 ·Eng-Huat Toh,Grace Huiqi Wang,Guo‐Qiang Lo,N. Balasubramanian,Chih-Hang Tung,F. Bénistant,Lap Chan,Ganesh Samudra,Yee‐Chia Yeo	19
12	Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancement 2006 ·Kah‐Wee Ang,King-Jien Chui,Vladimir Bliznetsov,(unknown),(unknown),Chih-Hang Tung,N. Balasubramanian,Mingfu Li,Ganesh Samudra,Yee-Chia Yeo	24
13	Source/drain germanium condensation for p-channel strained ultra-thin body transistors 2006 ·King-Jien Chui,Kah‐Wee Ang,(unknown),Huiqi Wang,Chih-Hang Tung,(unknown),(unknown),(unknown),N. Balasubramanian,Ming Fu Li,Ganesh Samudra,Yee‐Chia Yeo	4
14	Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals 2006 ·Subhranu Samanta,Pawan Kumar Singh,Won Jong Yoo,Ganesh Samudra,Yee‐Chia Yeo,L. K. Bera,N. Balasubramanian	24
15	Modeling Study of InSb Thin Film For Advanced III-V MOSFET Applications 2006 ·National University of Singapore ·(unknown),Tony Low,(unknown),W. J. Fan,Ping Bai,D. L. Kwong,Ganesh Samudra	6
16	Modeling Study of the Impact of Surface Roughness on Silicon and Germanium UTB MOSFETs 2005 ·IEEE Transactions on Electron Devices ·Tony Low,M. F. Li,Ganesh Samudra,Yee‐Chia Yeo,Chunxiang Zhu,Albert Chin,Dim‐Lee Kwong	30
17	Simulation of trapping properties of high κ material as the charge storage layer for flash memory application 2005 ·Thin Solid Films ·(unknown),Yingqian Wang,(unknown),Won Jong Yoo,Ganesh Samudra,(unknown),(unknown)	3
18	Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric 2005 ·IEEE Electron Device Letters ·Tianzhi Yang,Chen Shen,(unknown),C. H. Ang,Chunxiang Zhu,Yee‐Chia Yeo,Ganesh Samudra,Dim‐Lee Kwong	33
19	A FinFET and Tri-gate MOSFET's channel structure patterning and its influence on the device performance 2004 ·Thin Solid Films ·(unknown),Navab Singh,(unknown),(unknown),Ganesh Samudra,N. Balasubramanian	7
20	Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded in HfAlO High-<tex>$kappa$</tex>Tunneling and Control Oxides: Device Fabrication and Electrical Performance 2004 ·IEEE Transactions on Electron Devices ·Jianhui Chen,(unknown),Won Jong Yoo,Yee‐Chia Yeo,Ganesh Samudra,D.S.H. Chan,An Du,Dim‐Lee Kwong	84

About Ganesh Samudra

Ganesh Samudra is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 33 papers that have together received 567 indexed citations. Recurring topics across this work include Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers) and Semiconductor materials and interfaces (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (546 citations), Atomic and Molecular Physics, and Optics (118 citations) and Materials Chemistry (165 citations). Ganesh Samudra has collaborated with scholars based in Singapore, United States and China. Frequent co-authors include Yee‐Chia Yeo, Won Jong Yoo, Lap Chan, Dim‐Lee Kwong, N. Balasubramanian, Grace Huiqi Wang, Eng-Huat Toh, Subhranu Samanta, L. K. Bera and Guo‐Qiang Lo. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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