J. M. Hartmann

2.1k total citations · 1 hit paper
31 papers, 1.4k citations indexed

About

J. M. Hartmann is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, J. M. Hartmann has authored 31 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 8 papers in Biomedical Engineering. Recurrent topics in J. M. Hartmann's work include Photonic and Optical Devices (19 papers), Semiconductor materials and devices (8 papers) and Advanced Photonic Communication Systems (7 papers). J. M. Hartmann is often cited by papers focused on Photonic and Optical Devices (19 papers), Semiconductor materials and devices (8 papers) and Advanced Photonic Communication Systems (7 papers). J. M. Hartmann collaborates with scholars based in France, Switzerland and Germany. J. M. Hartmann's co-authors include H. Sigg, Jérôme Faist, Richard Geiger, S. Mantl, Stephan Wirths, Z. Ikonić, Detlev Grützmacher, Nils von den Driesch, Dan Buca and M. Luysberg and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Nature Photonics.

In The Last Decade

J. M. Hartmann

31 papers receiving 1.4k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Lasing in direct-bandgap GeSn alloy grown on Si

2015 937 citations Stephan Wirths, Richard Geiger et al. profile →

Peers

J. M. Hartmann

EEE

AMPO

BE

MC

AI

Alban Gassenq France

Joe Margetis United States

Chi Xu United States

Vincent Reboud France

Moritz Brehm Austria

Perry C. Grant United States

Mansour Mortazavi United States

Aboozar Mosleh United States

Nils von den Driesch Germany

Sattar Al-Kabi United States

Alban Gassenq France

J. M. Hartmann

1.0k ×0.7

EEE

551 ×0.8

AMPO

323 ×0.7

BE

293 ×1.0

MC

32 ×0.5

AI

Citations per year, relative to J. M. Hartmann J. M. Hartmann (= 1×) peers Alban Gassenq

Countries citing papers authored by J. M. Hartmann

Since Specialization

Citations

This map shows the geographic impact of J. M. Hartmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. M. Hartmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. M. Hartmann more than expected).

Fields of papers citing papers by J. M. Hartmann

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. M. Hartmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. M. Hartmann. The network helps show where J. M. Hartmann may publish in the future.

Co-authorship network of co-authors of J. M. Hartmann

This figure shows the co-authorship network connecting the top 25 collaborators of J. M. Hartmann. A scholar is included among the top collaborators of J. M. Hartmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. M. Hartmann. J. M. Hartmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

1.

Bogumilowicz, Y., J. M. Hartmann, M. Martin, et al.. (2025). Heteroepitaxy of GaAs on Ge buffered silicon substrates: Nucleation and crystalline defects. Journal of Crystal Growth. 667. 128235–128235. 1 indexed citations

2.

Segura‐Ruiz, Jaime, N. Pauc, Jérémie Chrétien, et al.. (2020). Impact of the growth strategy and device fabrication on the alloy homogeneity in optoelectronic grade Sn-rich GeSn. Materials Science and Engineering B. 264. 114899–114899. 10 indexed citations

3.

Stange, Daniela, Nils von den Driesch, T. Zabel, et al.. (2017). Reduced threshold microdisk lasers from GeSn/SiGeSn heterostructures. DORA PSI (Paul Scherrer Institute). 15–16. 2 indexed citations

4.

Aubin, J., Alban Gassenq, Samuel Tardif, et al.. (2017). Inductively coupled plasma etching of germanium tin for the fabrication of photonic components. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 10108. 101080C–101080C. 4 indexed citations

5.

Aubin, J., J. M. Hartmann, Alban Gassenq, et al.. (2017). Growth and structural properties of step-graded, high Sn content GeSn layers on Ge. Semiconductor Science and Technology. 32(9). 94006–94006. 69 indexed citations

6.

Reboud, Vincent, Alban Gassenq, J. M. Hartmann, et al.. (2017). Germanium based photonic components toward a full silicon/germanium photonic platform. Progress in Crystal Growth and Characterization of Materials. 63(2). 1–24. 54 indexed citations

7.

Buca, Dan, Nils von den Driesch, Daniela Stange, et al.. (2016). GeSn lasers for CMOS integration. DORA PSI (Paul Scherrer Institute). 22.3.1–22.3.4. 9 indexed citations

8.

Bogumilowicz, Y., J. M. Hartmann, N. Rochat, et al.. (2016). Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300 mm Si substrates. Journal of Crystal Growth. 453. 180–187. 24 indexed citations

9.

Gassenq, Alban, Samuel Tardif, K. Guilloy, et al.. (2016). Accurate strain measurements in highly strained Ge microbridges. Applied Physics Letters. 108(24). 32 indexed citations

10.

Gassenq, Alban, Samuel Tardif, N. Pauc, et al.. (2015). DBR based cavities in strained Ge microbridge on 200 mm Germanium-On-Insulator (GeOI) substrates: towards CMOS compatible laser applications. Conference on Lasers and Electro-Optics. 1 indexed citations

11.

Gassenq, Alban, K. Guilloy, N. Pauc, et al.. (2015). Study of the light emission in Ge layers and strained membranes on Si substrates. Thin Solid Films. 613. 64–67. 14 indexed citations

12.

Wirths, Stephan, H. Sigg, Detlev Grützmacher, et al.. (2015). Direct bandgap GeSn microdisk lasers at 2.5 μm for monolithic integration on Si-platform. DORA PSI (Paul Scherrer Institute). 13. 2.6.1–2.6.4. 4 indexed citations

13.

Hartmann, J. M., V. Benevent, Vincent Reboud, et al.. (2015). Structural and electronic properties of in-situ phosphorous-doped Ge layers grown by reduced pressure-chemical vapour deposition. Thin Solid Films. 602. 13–19. 2 indexed citations

14.

Rieutord, F., J. M. Hartmann, Anne‐Marie Charvet, et al.. (2013). Hydrophobic direct bonding of silicon reconstructed surfaces. Microsystem Technologies. 19(5). 675–679. 7 indexed citations

15.

Doizi, D., et al.. (2011). Optical on line techniques for nuclear applications. 1. 1–6. 1 indexed citations

16.

Jamet, Matthieu, Thibaut Devillers, Ing‐Song Yu, et al.. (2010). (Ge,Mn): A ferromagnetic semiconductor for spin injection in silicon. International Journal of Nanotechnology. 7(4/5/6/7/8). 575–575. 1 indexed citations

17.

Bluet, Jean‐Marie, et al.. (2008). Thickness dependence of photoluminescence for tensely strained silicon layer on insulator. Applied Physics Letters. 93(19). 2 indexed citations

18.

Hartmann, J. M., J. Eymery, & V. Calvo. (2002). Large and small angle x-ray scattering studies of Si/SiGe superlattices grown by gas-source molecular beam epitaxy. Semiconductor Science and Technology. 17(3). 198–204. 2 indexed citations

19.

Hartmann, J. M., M. Charleux, Jean‐Luc Rouvière, & H. Mariette. (1997). Growth of CdTe/MnTe tilted and serpentine lattices on vicinal surfaces. Applied Physics Letters. 70(9). 1113–1115. 10 indexed citations

20.

Hartmann, J. M., G. Feuillet, M. Charleux, & H. Mariette. (1996). Atomic layer epitaxy of CdTe and MnTe. Journal of Applied Physics. 79(6). 3035–3041. 74 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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