V. Pačebutas

1.0k total citations
59 papers, 819 citations indexed

About

V. Pačebutas is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, V. Pačebutas has authored 59 papers receiving a total of 819 indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Electrical and Electronic Engineering, 43 papers in Atomic and Molecular Physics, and Optics and 17 papers in Materials Chemistry. Recurrent topics in V. Pačebutas's work include Semiconductor Quantum Structures and Devices (39 papers), Terahertz technology and applications (17 papers) and Silicon Nanostructures and Photoluminescence (12 papers). V. Pačebutas is often cited by papers focused on Semiconductor Quantum Structures and Devices (39 papers), Terahertz technology and applications (17 papers) and Silicon Nanostructures and Photoluminescence (12 papers). V. Pačebutas collaborates with scholars based in Lithuania, United States and Germany. V. Pačebutas's co-authors include A. Krotkus, K. Bertulis, Renata Butkutė, R. Adomavičius, G. Molis, Bronislovas Čechavičius, K. Grigoras, Sandra Stanionytė, Kerstin Volz and M. Leszczyński and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

V. Pačebutas

58 papers receiving 780 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Pačebutas Lithuania 15 613 592 238 155 147 59 819
Mostafa Masnadi‐Shirazi Canada 12 357 0.6× 413 0.7× 145 0.6× 156 1.0× 102 0.7× 20 584
K. Bertulis Lithuania 14 616 1.0× 568 1.0× 138 0.6× 58 0.4× 149 1.0× 29 747
Ichirou Nomura Japan 15 497 0.8× 558 0.9× 262 1.1× 69 0.4× 151 1.0× 60 692
S. R. Jin United Kingdom 14 663 1.1× 586 1.0× 170 0.7× 94 0.6× 221 1.5× 42 799
M. B. M. Rinzan United States 12 201 0.3× 255 0.4× 71 0.3× 64 0.4× 75 0.5× 21 338
Mihail Ion Lepsa Germany 18 654 1.1× 554 0.9× 363 1.5× 536 3.5× 163 1.1× 63 1.0k
Alon Vardi United States 20 372 0.6× 719 1.2× 265 1.1× 243 1.6× 276 1.9× 52 1.0k
Renata Butkutė Lithuania 14 332 0.5× 355 0.6× 255 1.1× 34 0.2× 99 0.7× 67 549
Armando Somintac Philippines 11 224 0.4× 327 0.6× 148 0.6× 88 0.6× 32 0.2× 92 441
L. Doyennette France 14 602 1.0× 490 0.8× 339 1.4× 148 1.0× 476 3.2× 41 969

Countries citing papers authored by V. Pačebutas

Since Specialization
Citations

This map shows the geographic impact of V. Pačebutas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Pačebutas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Pačebutas more than expected).

Fields of papers citing papers by V. Pačebutas

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Pačebutas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Pačebutas. The network helps show where V. Pačebutas may publish in the future.

Co-authorship network of co-authors of V. Pačebutas

This figure shows the co-authorship network connecting the top 25 collaborators of V. Pačebutas. A scholar is included among the top collaborators of V. Pačebutas based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Pačebutas. V. Pačebutas is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Pačebutas, V., et al.. (2024). Tellurium/GaAs heterojunctions fabricated by thermal evaporation in vacuum. Lithuanian Journal of Physics. 64(4).
2.
Krotkus, A., et al.. (2023). Terahertz photocurrent spectrum analysis of AlGaAs/GaAs/GaAsBi multi-junction solar cells. Journal of Physics D Applied Physics. 56(35). 355109–355109. 3 indexed citations
3.
Paulauskas, Tadas, V. Pačebutas, J. Devenson, et al.. (2023). Performance assessment of a triple-junction solar cell with 1.0 eV GaAsBi absorber. Discover Nano. 18(1). 86–86. 5 indexed citations
4.
Paulauskas, Tadas, J. Devenson, Sandra Stanionytė, et al.. (2022). Epitaxial growth of GaAsBi on thin step-graded InGaAs buffer layers. Semiconductor Science and Technology. 37(6). 65004–65004. 5 indexed citations
5.
Paulauskas, Tadas, V. Pačebutas, Renata Butkutė, et al.. (2020). Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys. Nanoscale Research Letters. 15(1). 121–121. 13 indexed citations
6.
Pačebutas, V., Bronislovas Čechavičius, & A. Krotkus. (2020). Single quantum well diodes from GaInAsBi emitting at wavelengths up to 2.5 μm. Infrared Physics & Technology. 111. 103567–103567. 3 indexed citations
7.
Paulauskas, Tadas, V. Pačebutas, Sandra Stanionytė, et al.. (2020). GaAs1-xBix growth on Ge: anti-phase domains, ordering, and exciton localization. Scientific Reports. 10(1). 2002–2002. 10 indexed citations
8.
Paulauskas, Tadas, Bronislovas Čechavičius, V. Karpus, et al.. (2020). Polarization dependent photoluminescence and optical anisotropy in CuPtB-ordered dilute GaAs1–xBix alloys. Journal of Applied Physics. 128(19). 8 indexed citations
9.
Pačebutas, V., et al.. (2019). Terahertz pulse emission from GaInAsBi. Journal of Applied Physics. 125(17). 13 indexed citations
10.
Pačebutas, V., et al.. (2018). Terahertz excitation spectra of GaAsBi alloys. Journal of Physics D Applied Physics. 51(47). 474001–474001. 7 indexed citations
11.
Stanionytė, Sandra, et al.. (2018). Impact of thermal treatments on epitaxial GayIn1−yAs1−xBi x layers luminescent properties. Journal of Materials Science. 53(11). 8339–8346. 3 indexed citations
12.
Stanionytė, Sandra, et al.. (2016). Terahertz emission from GaInAs p-i-n diodes photoexcited by femtosecond laser pulses. Lithuanian Journal of Physics. 55(4). 2 indexed citations
13.
Butkutė, Renata, et al.. (2014). Bismuth quantum dots and strong infrared photoluminescence in migration-enhanced epitaxy grown GaAsBi-based structures. Optical and Quantum Electronics. 47(4). 873–882. 14 indexed citations
14.
Butkutė, Renata, V. Pačebutas, A. Krotkus, Nikolai Knaub, & Kerstin Volz. (2014). Migration-enhanced epitaxy of thin GaAsBi layers. Lithuanian Journal of Physics. 54(2). 125–129. 9 indexed citations
15.
Nargelas, Saulius, K. Jarašiūnas, K. Bertulis, & V. Pačebutas. (2011). Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique. Applied Physics Letters. 98(8). 22 indexed citations
16.
Pačebutas, V., et al.. (2009). Low‐temperature MBE‐grown GaBiAs layers for terahertz optoelectronic applications. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(12). 2649–2651. 9 indexed citations
17.
Pačebutas, V., A. Krotkus, Joel W. Ager, et al.. (2006). Optical bleaching effect in InN epitaxial layers. Applied Physics Letters. 88(19). 21 indexed citations
18.
Pačebutas, V., et al.. (2005). Optical Nonlinearities in PbSe Nanocrystals. Acta Physica Polonica A. 107(2). 294–297. 4 indexed citations
19.
Grigoras, K., et al.. (1999). Formation of Shallow n+-p Junction in Silicon bySpin-on Technique. Physica Scripta. T79(1). 236–236. 1 indexed citations
20.
Pačebutas, V., et al.. (1995). Electric and photoelectric properties of diode structures in porous silicon. Journal of Applied Physics. 77(6). 2501–2507. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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