V. I. Vdovin

1.2k citations

115 papers · 938 indexed · h-index 14

Materials Chemistry top 10%
- Silicon Nanostructures and Photoluminescence 47
Electrical and Electronic Engineering top 5%
- Silicon and Solar Cell Technologies 49
- Semiconductor materials and devices 27
- Thin-Film Transistor Technologies 20
- Silicon Carbide Semiconductor Technologies 13
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces 56
- Semiconductor Quantum Structures and Devices 15
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computational Mechanics
- Ion-surface interactions and analysis 11

Co-authors: A. Y. Polyakov S. J. Pearton N. B. Smirnov Е. А. Кожухова D. P. Norton K. Ip T. G. Yugova Young-Woo Heo
Cited by: Materials Chemistry Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters (2 papers)Journal of Applied Physics (2 papers)Physical Chemistry Chemical Physics (1 paper)
Partner nations: Russia France United States

In The Last Decade

V. I. Vdovin

105 papers receiving 917 citations

Peers

Countries citing papers authored by V. I. Vdovin

Since Specialization

Citations

This map shows the geographic impact of V. I. Vdovin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. I. Vdovin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. I. Vdovin more than expected).

Fields of papers citing papers by V. I. Vdovin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. I. Vdovin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. I. Vdovin. The network helps show where V. I. Vdovin may publish in the future.

Co-authorship network

The 25 scholars most cited alongside V. I. Vdovin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V. I. Vdovin Line = papers co-authored together V. I. Vdovin links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Change in the InSb nanocrystal growth direction at the Si/SiO2 interface during ion-beam synthesis Materials Letters ·I. E. Tyschenko,А. К. Гутаковский,R. Zhang,V. I. Vdovin,В. А. Володин,V. P. Popov	2024	0
2	Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy Thin Solid Films ·Т. В. Малин,Yan Maidebura,V. G. Mansurov,Tatyana A. Gavrilova,A.K. Gutakovsky,V. I. Vdovin,Sergey Ponomarev,И. Д. Лошкарев,I. V. Osinnykh,В. А. Володин,Denis Milakhin,К. С. Журавлев	2024	6
3	Tackling residual tensile stress in AlN-on-Si nucleation layers via the controlled Si(111) surface nitridation Surfaces and Interfaces ·Denis Milakhin,Т. В. Малин,V. G. Mansurov,Yan Maidebura,Dmitriy D. Bashkatov,Ilya Milekhin,S. V. Goryaĭnov,В. А. Володин,И. Д. Лошкарев,V. I. Vdovin,А. К. Гутаковский,Sergey Ponomarev,К. С. Журавлев	2024	2
4	HgCdTe surface passivation with low-temperature plasma-enhanced atomic layer deposited HfO2 Applied Surface Science ·Evgeniy R. Zakirov,G. Yu. Sidorov,Irina А. Krasnova,V. A. Golyashov,V. I. Vdovin,I. V. Marchishin,О. Е. Терещенко	2024	0
5	XPS investigation of the ALD Al ₂ O ₃ /HgCdTe heterointerface Semiconductor Science and Technology ·Evgeniy R. Zakirov,Valeriy G. Kesler,G. Yu. Sidorov,Igor P. Prosvirin,A.K. Gutakovsky,V. I. Vdovin	2019	19
6	Defect Structure of GaAs Layers Implanted with Nitrogen Ions Technical Physics Letters ·Н. А. Соболев,A. E. Kalyadin,K. V. Karabeshkin,R. N. Kyutt,V. M. Mikushkin,E. I. Shek,E. V. Sherstnev,V. I. Vdovin	2018	2
7	Model of photoluminescence temperature dependence in GaN/AlN quantum dot structures Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·I. A. Aleksandrov,V. G. Mansurov,V. I. Vdovin,К. С. Журавлев	2016	2
8	Fluorinated graphene suspension for inkjet printed technologies Nanotechnology ·Nadezhda A. Nebogatikova,I. V. Antonova,I. I. Kurkina,Regina A. Soots,V. I. Vdovin,V. B. Timofeev,S. A. Smagulova,V. Ya. Prinz	2016	15
9	Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix Journal of Experimental and Theoretical Physics ·В. А. Володин,M. P. Gambaryan,А. Г. Черков,V. I. Vdovin,M. Stoffel,H. Rinnert,M. Vergnat	2015	8
10	Modification of dislocation PL centres due to misfit of bonded Si wafers Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·É. A. Steinman,А. Н. Терещенко,Oleg Kononchuk,V. I. Vdovin	2012	2
11	A comprehensive structural analysis of silicon carbide layers grown by vacuum epitaxy on silicon from hydrides and hydrocarbons Journal of Structural Chemistry ·L. K. Orlov,Yu. N. Drozdov,М. Н. Дроздов,O. A. Pod’yacheva,V. I. Vdovin	2010	6
12	Combined MEIS/TEM study of structural defects in Si implanted with a high dose of 100 keV Si ions Superlattices and Microstructures ·Н. А. Соболев,В. И. Сахаров,I. T. Serenkov,V. I. Vdovin	2009	3
13	Structure, electrical and magnetic properties, and the origin of the room temperature ferromagnetism in Mn-implanted Si Journal of Experimental and Theoretical Physics ·A. F. Orlov,A. B. Granovsky,L. A. Balagurov,I. V. Kulemanov,Yu. N. Parkhomenko,N. S. Perov,Е. А. Ганьшина,В. Т. Бублик,К. Д. Щербачев,A. V. Kartavykh,V. I. Vdovin,Andrei Sapelkin,В. В. Сарайкин,Yu. A. Agafonov,В. И. Зиненко,Andreï Rogalev,Alevtina Smekhova	2009	13
14	Structure and ultraviolet photoluminescence of 3C-SiC films grown on Si(111) Physics of the Solid State ·L. K. Orlov,Yu. N. Drozdov,N. A. Alyabina,N. L. Ivina,V. I. Vdovin,I. N. Dmitruk	2009	6
15	Oxygen gettering at defects introduced by plastic deformation in silicon Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Nikolai Yarykin,Е. Hieckmann,V. I. Vdovin	2007	1
16	Low-temperature strain relaxation in SiGe/Si heterostructures implanted with Ge+ ions Materials Science and Engineering B ·V. Avrutin,N. Izyumskaya,A. F. Vyatkin,В. И. Зиненко,Yu. A. Agafonov,D. V. Irzhak,Д. В. Рощупкин,É. A. Steinman,V. I. Vdovin,T. G. Yugova	2003	4
17	Heteroepitaxy of Ge-Si/sub 1-x/Ge/sub x/ superlattices on Si (100) substrates by GeH/sub 4/-Si MBE L. K. Orlov,V. A. Tolomasov,А. В. Потапов,Yu. N. Drozdov,V. I. Vdovin	2002	1
18	A study of structural perfection of interfaces in Si/SiGe superlattices Crystallography Reports ·V. I. Vdovin,К. Д. Щербачев,M. Mironov,C. P. Parry,E. H. C. Parker	2000	2
19	Misfit Dislocations in Epitaxial Heterostructures: Mechanisms of Generation and Multiplication physica status solidi (a) ·V. I. Vdovin	1999	42
20	Superlattices of the Ge-Ge 1 - x Si x type fabricated by the hydride method Semiconductors ·O. A. Kuznetsov,L. K. Orlov,Yu. N. Drozdov,В. М. Воротынцев,M. G. Mil’vidskiĭ,V. I. Vdovin,R. Carles,G. Landa,A. Tybulewicz	1993	1

About V. I. Vdovin

V. I. Vdovin is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry, having authored 115 papers that have together received 938 indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (56 papers), Silicon and Solar Cell Technologies (49 papers), Silicon Nanostructures and Photoluminescence (47 papers), Semiconductor materials and devices (27 papers), Thin-Film Transistor Technologies (20 papers), Semiconductor Quantum Structures and Devices (15 papers), Silicon Carbide Semiconductor Technologies (13 papers) and Ion-surface interactions and analysis (11 papers). The work is most often cited by research in Materials Chemistry (656 citations), Electrical and Electronic Engineering (664 citations) and Atomic and Molecular Physics, and Optics (345 citations). V. I. Vdovin has collaborated with scholars based in Russia, France and United States. Frequent co-authors include A. Y. Polyakov, S. J. Pearton, N. B. Smirnov, Е. А. Кожухова, D. P. Norton, K. Ip, T. G. Yugova, Young-Woo Heo, Н. А. Соболев and A. M. Emel’yanov. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Physical Chemistry Chemical Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact