É. A. Steinman

755 total citations
62 papers, 612 citations indexed

About

É. A. Steinman is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, É. A. Steinman has authored 62 papers receiving a total of 612 indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 47 papers in Materials Chemistry and 31 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in É. A. Steinman's work include Silicon Nanostructures and Photoluminescence (37 papers), Silicon and Solar Cell Technologies (35 papers) and Semiconductor materials and interfaces (29 papers). É. A. Steinman is often cited by papers focused on Silicon Nanostructures and Photoluminescence (37 papers), Silicon and Solar Cell Technologies (35 papers) and Semiconductor materials and interfaces (29 papers). É. A. Steinman collaborates with scholars based in Russia, Sweden and France. É. A. Steinman's co-authors include V. V. Kveder, С. А. Шевченко, M. Seibt, W. Schröter, M. Badylevich, H. G. Grimmeiss, H. G. Grimmeiss, V. I. Vdovin, Yu. A. Ossipyan and V. Avrutin and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

É. A. Steinman

61 papers receiving 595 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
É. A. Steinman Russia	12	490	467	315	95	55	62	612
Prajakta Chaudhari India	8	176 0.4×	302 0.6×	148 0.5×	133 1.4×	75 1.4×	10	423
O. B. Gusev Russia	13	502 1.0×	640 1.4×	195 0.6×	213 2.2×	47 0.9×	75	765
Leonid Bolotov Japan	11	248 0.5×	176 0.4×	202 0.6×	69 0.7×	32 0.6×	55	372
Jiro Nishinaga Japan	15	627 1.3×	572 1.2×	185 0.6×	28 0.3×	12 0.2×	76	697
Ruilong Xie Singapore	9	404 0.8×	208 0.4×	124 0.4×	96 1.0×	11 0.2×	20	512
Xavier Declerck Belgium	5	190 0.4×	421 0.9×	162 0.5×	64 0.7×	13 0.2×	6	448
I. G. Gale United Kingdom	11	362 0.7×	180 0.4×	106 0.3×	39 0.4×	43 0.8×	30	413
Y. S. Tang United Kingdom	13	333 0.7×	340 0.7×	259 0.8×	126 1.3×	33 0.6×	48	509
K. Mochizuki Japan	10	304 0.6×	150 0.3×	285 0.9×	35 0.4×	9 0.2×	12	375
D. Többen Germany	11	459 0.9×	102 0.2×	370 1.2×	67 0.7×	15 0.3×	20	558

Countries citing papers authored by É. A. Steinman

Since Specialization

Citations

This map shows the geographic impact of É. A. Steinman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by É. A. Steinman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites É. A. Steinman more than expected).

Fields of papers citing papers by É. A. Steinman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by É. A. Steinman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by É. A. Steinman. The network helps show where É. A. Steinman may publish in the future.

Co-authorship network of co-authors of É. A. Steinman

This figure shows the co-authorship network connecting the top 25 collaborators of É. A. Steinman. A scholar is included among the top collaborators of É. A. Steinman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with É. A. Steinman. É. A. Steinman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Королев, Д. С., Alexey Mikhaylov, A. I. Belov, et al.. (2018). Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si+ Ion Implantation. Semiconductors. 52(7). 843–848. 5 indexed citations

Куликаускас, В. С., et al.. (2017). Quartz modification by Zn ion implantation and swift Xe ion irradiation. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 14(7). 1 indexed citations

Steinman, É. A., et al.. (2015). Structures and electronic properties of defects on the borders of silicon bonded wafers. Russian Microelectronics. 44(8). 585–589. 1 indexed citations

Borisenko, D. N., et al.. (2013). Self-Bonded Silicon Carbide Layer on Carbon Foil: Preparation and Properties. Recent Patents on Materials Science. 6(3). 253–257. 1 indexed citations

Зиненко, В. И., I. I. Khodos, Yu. A. Agafonov, et al.. (2012). Luminescence induced in diamond by He+ ion implantation into SiC/C composites with an inverse opal structure. Physics of the Solid State. 54(3). 586–592. 3 indexed citations

Steinman, É. A., et al.. (2012). Features and mechanisms of growth of cubic silicon carbide films on silicon. Physics of the Solid State. 54(4). 708–715. 5 indexed citations

Steinman, É. A., et al.. (2012). Modification of dislocation PL centres due to misfit of bonded Si wafers. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 10(1). 16–19. 2 indexed citations

Emeľchenko, G. A., А. А. Жохов, В. М. Масалов, et al.. (2010). SiC/C nanocomposites with inverse opal structure. Nanotechnology. 21(47). 475604–475604. 5 indexed citations

Steinman, É. A., et al.. (2007). Structure and radiation properties of dislocations arising during oxygen precipitate growth in silicon. Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques. 1(3). 318–322. 1 indexed citations

10.

Steinman, É. A., et al.. (2007). The Unusual Temperature Shift of Dislocation Related D1/D2 PL Bands in Donor Doped Silicon. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 131-133. 607–612. 3 indexed citations

11.

Steinman, É. A., et al.. (2007). Peculiarities of Dislocation Related D1/D2 Bands Behavior under Copper Contamination in Silicon. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 131-133. 213–218. 2 indexed citations

12.

Steinman, É. A.. (2005). Oxygen-Induced Modification of Dislocation Luminescence Centers in Silicon. Physics of the Solid State. 47(1). 5–5. 10 indexed citations

13.

Kveder, V. V., et al.. (2005). Silicon light‐emitting diodes based on dislocation‐related luminescence. physica status solidi (a). 202(5). 901–910. 54 indexed citations

14.

Horváth, Zs. J., et al.. (2004). Electrical characteristics and the energy band diagram of the isotype n-Si1−x Gex/n-Si heterojunction in relaxed structures. Physics of the Solid State. 46(11). 2139–2145. 2 indexed citations

15.

Avrutin, V., N. Izyumskaya, В. И. Зиненко, et al.. (2003). Low-temperature strain relaxation in SiGe/Si heterostructures implanted with Ge+ ions. Materials Science and Engineering B. 100(1). 35–39. 4 indexed citations

16.

Steinman, É. A., V. V. Kveder, V. I. Vdovin, & H. G. Grimmeiss. (1999). The Origin and Efficiency of Dislocation Luminescence in Si and its Possible Application in Optoelectronics. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 69-70. 23–32. 8 indexed citations

17.

Steinman, É. A., Hartmut S. Leipner, & H. G. Grimmeiss. (1997). The Magnesium Related Luminescence in Silicon and its Quenching due to the Presence of Dislocations. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 57-58. 313–318. 2 indexed citations

18.

Kveder, V. V., É. A. Steinman, B.Zh. Narymbetov, et al.. (1997). Crystal structure and photoluminescence of single crystals of fullerene-9,9′-trans-bis(telluraxanthenyl) molecular complex: C26H18Te2 · C60 · CS2. Chemical Physics. 216(3). 407–415. 12 indexed citations

19.

Steinman, É. A., V. V. Kveder, & H. G. Grimmeiss. (1995). The Mechanisms and Application of Dislocation Related Radiation for Silicon Based Light Sources. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 47-48. 217–222. 5 indexed citations

20.

Kirscht, F.‐G., В. И. Никитенко, Hans Richter, É. A. Steinman, & E. B. Yakimov. (1986). Photoluminescence of Preannealed Plastically Deformed Silicon Crystals. physica status solidi (a). 93(2). K143–K146. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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