L. A. Balagurov

473 citations

35 papers · 376 indexed · h-index 12

Materials Chemistry
- Silicon Nanostructures and Photoluminescence 17
- ZnO doping and properties 16
- Electronic and Structural Properties of Oxides 8
Biomedical Engineering
- Nanowire Synthesis and Applications 13
Electrical and Electronic Engineering
- Semiconductor materials and devices 11
- Silicon and Solar Cell Technologies 5
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 9
Electronic, Optical and Magnetic Materials
- Magnetic and transport properties of perovskites and related materials 6

Co-authors: Е. А. Петрова Paul Joe Chong S. C. Bayliss B. Ünal N. S. Perov I. P. Zvyagin Andrei Sapelkin Е. А. Ганьшина
Cited by: Materials Chemistry Biomedical Engineering Electrical and Electronic Engineering
Journals: Applied Physics Letters (2 papers)Journal of Applied Physics (5 papers)Electrochimica Acta (1 paper)
Partner nations: Russia United Kingdom Tajikistan

In The Last Decade

L. A. Balagurov

32 papers receiving 362 citations

Peers

Countries citing papers authored by L. A. Balagurov

Since Specialization

Citations

This map shows the geographic impact of L. A. Balagurov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. A. Balagurov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. A. Balagurov more than expected).

Fields of papers citing papers by L. A. Balagurov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. A. Balagurov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. A. Balagurov. The network helps show where L. A. Balagurov may publish in the future.

Co-authorship network

The 25 scholars most cited alongside L. A. Balagurov, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L. A. Balagurov Line = papers co-authored together L. A. Balagurov links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Above Room Temperature Ferromagnetism in Si:Mn and TiO_2−δ:Co Journal of Nanoscience and Nanotechnology ·A. B. Granovsky,Alexei O. Orlov,N. S. Perov,Е. А. Ганьшина,Anna Semisalova,L. A. Balagurov,I. V. Kulemanov,Andrei Sapelkin,Andreï Rogalev,Alevtina Smekhova	2012	2
2	Magnetic and magnetooptical properties of ferromagnetic semiconductor GaN : Cr Physics of the Solid State ·A. F. Orlov,L. A. Balagurov,I. V. Kulemanov,N. S. Perov,Е. А. Ганьшина,Anna Semisalova,A. Rubacheva,В. И. Зиненко,Yu. A. Agafonov,В. В. Сарайкин	2012	2
3	Intrinsic ferromagnetism created by vacancy injection in a semiconductor oxide Ti1 − x Co x O2 − δ Physics of the Solid State ·A. F. Orlov,L. A. Balagurov,I. V. Kulemanov,N. S. Perov,Е. А. Ганьшина,L. Y. Fetisov,Andreï Rogalev,Alevtina Smekhova,J. C. Cezar	2011	3
4	Spreading resistance and compensation of charge carriers in ferromagnetic silicon implanted with manganese Semiconductors ·A. F. Orlov,L. A. Balagurov,I. V. Kulemanov,Yu. N. Parkhomenko,A. V. Kartavykh,В. В. Сарайкин,Yu. A. Agafonov,В. И. Зиненко	2010	2
5	Charge Carriers Compensation in a Ferromagnetic Mn-Implanted Si A. F. Orlov,L. A. Balagurov,I. V. Kulemanov,Yu. N. Parkhomenko,A. V. Kartavykh,В. В. Сарайкин,Yu. A. Agafonov,В. И. Зиненко	2009	0
6	Structure, electrical and magnetic properties, and the origin of the room temperature ferromagnetism in Mn-implanted Si Journal of Experimental and Theoretical Physics ·A. F. Orlov,A. B. Granovsky,L. A. Balagurov,I. V. Kulemanov,Yu. N. Parkhomenko,N. S. Perov,Е. А. Ганьшина,В. Т. Бублик,К. Д. Щербачев,A. V. Kartavykh,V. I. Vdovin,Andrei Sapelkin,В. В. Сарайкин,Yu. A. Agafonov,В. И. Зиненко,Andreï Rogalev,Alevtina Smekhova	2009	13
7	Study of structural characteristics of ferromagnetic silicon implanted with manganese Crystallography Reports ·A. F. Orlov,Yu. A. Agafonov,L. A. Balagurov,В. Т. Бублик,В. И. Зиненко,N. S. Perov,В. В. Сарайкин,К. Д. Щербачев	2008	2
8	Giant magnetic moments in ferromagnetic oxide semiconductors Journal of Experimental and Theoretical Physics Letters ·A. F. Orlov,N. S. Perov,L. A. Balagurov,A.S. Konstantinova,D. G. Yarkin	2007	6
9	Giant magnetic moments in dilute magnetic semiconductors Journal of Magnetism and Magnetic Materials ·A. F. Orlov,L. A. Balagurov,A.S. Konstantinova,N. S. Perov,D. G. Yarkin	2007	9
10	Ferromagnetism of 3-D transition metals solid solutions in titanium oxides Journal of Magnetism and Magnetic Materials ·L. A. Balagurov,S. O. Klimonsky,S. P. Kobeleva,A.S. Konstantinova,A. F. Orlov,N. S. Perov,Andrei Sapelkin,D. G. Yarkin	2006	0
11	Boundary conditions for the formation of a ferromagnetic phase during the deposition of Ti1-xCo x O2-δ thin films Crystallography Reports ·L. A. Balagurov,Е. А. Ганьшина,S. O. Klimonskii,S. P. Kobeleva,A. F. Orlov,N. S. Perov,D. G. Yarkin	2005	3
12	On the origin of ferromagnetism in semiconducting TiO2−δ:Co oxide Journal of Experimental and Theoretical Physics Letters ·L. A. Balagurov,S. O. Klimonsky,S. P. Kobeleva,A. F. Orlov,N. S. Perov,D. G. Yarkin	2004	10
13	Low noise photosensitive device structures based on porous silicon Solid-State Electronics ·L. A. Balagurov,S. C. Bayliss,D. G. Yarkin,S.Ya Andrushin,V.S Kasatochkin,A. F. Orlov,Е. А. Петрова	2003	4
14	Transport of carriers in metal/porous silicon/c-Si device structures based on oxidized porous silicon Journal of Applied Physics ·L. A. Balagurov,S. C. Bayliss,V.S Kasatochkin,Е. А. Петрова,B. Ünal,D. G. Yarkin	2001	18
15	Effect Of High Concentration Of Defect States At PS/c-Si Heterointerface On Transport Properties Of Al/PS/c-Si Photodiode Structures MRS Proceedings ·L. A. Balagurov,A. F. Orlov,Е. А. Петрова,D. G. Yarkin,S. Ya. Andryushin	1997	2
16	Highly sensitive porous silicon based photodiode structures Journal of Applied Physics ·L. A. Balagurov,D. G. Yarkin,G. A. Petrovicheva,Е. А. Петрова,A. F. Orlov,S. Ya. Andryushin	1997	35
17	Effects of vacuum annealing on the optical properties of porous silicon Applied Physics Letters ·L. A. Balagurov,D. G. Yarkin,Е. А. Петрова,A. F. Orlov,S. N. Karyagin	1996	12
18	Study of deep level defects in n-GaN by the optical transmission method Applied Physics Letters ·L. A. Balagurov,Paul Joe Chong	1996	36
19	Device structures on porous silicon studied by scanning electron microscopy in the electron-beam current mode Journal of Applied Physics ·L. A. Balagurov,Eugene A. Katz,Е. А. Петрова,A. V. Govorkov,N. I. Ritova,V. M. Evdokimov,A. E. Lük’yanov,N. A. Butilkina	1996	6
20	Recombination of carriers in n-type InAs at 77$sup 0$K OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) ·A.N. Blaut-Blachev,L. A. Balagurov,V. V. Karataev,E.M. Omel'yanovskii	1975	1

About L. A. Balagurov

L. A. Balagurov is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 35 papers that have together received 376 indexed citations. Recurring topics across this work include Silicon Nanostructures and Photoluminescence (17 papers), ZnO doping and properties (16 papers), Nanowire Synthesis and Applications (13 papers), Semiconductor materials and devices (11 papers), Semiconductor materials and interfaces (9 papers), Electronic and Structural Properties of Oxides (8 papers), Magnetic and transport properties of perovskites and related materials (6 papers) and Silicon and Solar Cell Technologies (5 papers). The work is most often cited by research in Materials Chemistry (321 citations), Biomedical Engineering (207 citations) and Electrical and Electronic Engineering (231 citations). L. A. Balagurov has collaborated with scholars based in Russia, United Kingdom and Tajikistan. Frequent co-authors include Е. А. Петрова, Paul Joe Chong, S. C. Bayliss, B. Ünal, N. S. Perov, I. P. Zvyagin, Andrei Sapelkin, Е. А. Ганьшина, Alevtina Smekhova and Andreï Rogalev. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Electrochimica Acta.

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