I. E. Tyschenko

858 total citations
75 papers, 636 citations indexed

About

I. E. Tyschenko is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Computational Mechanics. According to data from OpenAlex, I. E. Tyschenko has authored 75 papers receiving a total of 636 indexed citations (citations by other indexed papers that have themselves been cited), including 62 papers in Materials Chemistry, 54 papers in Electrical and Electronic Engineering and 31 papers in Computational Mechanics. Recurrent topics in I. E. Tyschenko's work include Silicon Nanostructures and Photoluminescence (58 papers), Ion-surface interactions and analysis (31 papers) and Semiconductor materials and devices (30 papers). I. E. Tyschenko is often cited by papers focused on Silicon Nanostructures and Photoluminescence (58 papers), Ion-surface interactions and analysis (31 papers) and Semiconductor materials and devices (30 papers). I. E. Tyschenko collaborates with scholars based in Russia, Germany and Poland. I. E. Tyschenko's co-authors include W. Skorupa, R.A. Yankov, H. Fröb, Karl Leo, L. Rebohle, J. von Borany, G. A. Kachurin, V. P. Popov, В. А. Володин and Thomas Böhme and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

I. E. Tyschenko

69 papers receiving 625 citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
I. E. Tyschenko 558 468 250 185 100 75 636
K. S. Min 900 1.6× 666 1.4× 572 2.3× 159 0.9× 163 1.6× 14 950
R. Madelon 444 0.8× 396 0.8× 166 0.7× 75 0.4× 122 1.2× 39 522
G. A. Kachurin 401 0.7× 342 0.7× 157 0.6× 227 1.2× 90 0.9× 59 494
H. Coffin 394 0.7× 396 0.8× 187 0.7× 97 0.5× 83 0.8× 18 504
M. Nerding 334 0.6× 412 0.9× 126 0.5× 59 0.3× 61 0.6× 28 498
H. Heckler 948 1.7× 602 1.3× 684 2.7× 50 0.3× 200 2.0× 17 988
F. L. Pesavento 449 0.8× 642 1.4× 223 0.9× 45 0.2× 95 0.9× 10 687
Paul Wickboldt 360 0.6× 456 1.0× 91 0.4× 46 0.2× 120 1.2× 33 537
M. D. Efremov 325 0.6× 320 0.7× 146 0.6× 65 0.4× 184 1.8× 63 471
C. Smit 304 0.5× 385 0.8× 78 0.3× 39 0.2× 190 1.9× 13 506

Countries citing papers authored by I. E. Tyschenko

Since Specialization
Citations

This map shows the geographic impact of I. E. Tyschenko's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. E. Tyschenko with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. E. Tyschenko more than expected).

Fields of papers citing papers by I. E. Tyschenko

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. E. Tyschenko. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. E. Tyschenko. The network helps show where I. E. Tyschenko may publish in the future.

Co-authorship network of co-authors of I. E. Tyschenko

This figure shows the co-authorship network connecting the top 25 collaborators of I. E. Tyschenko. A scholar is included among the top collaborators of I. E. Tyschenko based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. E. Tyschenko. I. E. Tyschenko is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tyschenko, I. E., et al.. (2024). Change in the InSb nanocrystal growth direction at the Si/SiO2 interface during ion-beam synthesis. Materials Letters. 373. 137114–137114.
2.
Tyschenko, I. E., et al.. (2022). 9740. Физика и техника полупроводников. 56(2). 192–192. 1 indexed citations
3.
Popov, V. P., А. К. Гутаковский, I. E. Tyschenko, et al.. (2021). Robust semiconductor-on-ferroelectric structures with hafnia–zirconia–alumina UTBOX stacks compatible with CMOS technology. Journal of Physics D Applied Physics. 54(22). 225101–225101. 7 indexed citations
4.
Tyschenko, I. E., et al.. (2020). Effect of SiO2 surface conditions on the diffusion and interaction of co-implanted In and As atoms. Journal of Non-Crystalline Solids. 553. 120514–120514. 2 indexed citations
5.
Tyschenko, I. E., et al.. (2016). Enhanced germanium precipitation and nanocrystal growth in the Ge+ ion-implanted SiO2 films during high-pressure annealing. Solid State Communications. 247. 53–57. 2 indexed citations
6.
Спесивцев, Е. В., et al.. (2011). Anodization of nanoscale Si layers in silicon-on-insulator structures. Semiconductors. 45(8). 1089–1093. 2 indexed citations
7.
Tyschenko, I. E., et al.. (2009). Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 267(8-9). 1360–1363. 4 indexed citations
8.
Tyschenko, I. E., et al.. (2009). Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 films and subsequent hydrogen transfer of Si layers. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 267(8-9). 1277–1280. 1 indexed citations
9.
Tyschenko, I. E., et al.. (2007). SiGe Heterostructures-on-Insulator Produced by Ge<sup>+</sup>-Ion Implantation and Subsequent Hydrogen Transfer. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 131-133. 143–148. 1 indexed citations
10.
Tyschenko, I. E., L. Rebohle, Boris A. Kolesov, et al.. (2001). Blue-Green Photoluminescence from Silicon Dioxide Films Containing Ge<sup>+</sup> Nanocrystals Formed under Conditions of High Hydrostatic Pressure Annealing. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 82-84. 607–612. 1 indexed citations
11.
Tyschenko, I. E., et al.. (2001). Structural and Photoluminescence Properties of H<sup>+</sup> Ion-Implanted Silicon-on-Insulator Structures Formed by Hydrogen Slicing. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 82-84. 509–514. 2 indexed citations
12.
Tyschenko, I. E., К. С. Журавлев, A. Misiuk, et al.. (2001). Study of photoluminescence of SiOxNy films implanted with Ge+ ions and annealed under the conditions of hydrostatic pressure. Semiconductors. 35(2). 125–131.
13.
Tyschenko, I. E., et al.. (1999). Photoluminescence of Si3N4 films implanted with Ge+ and Ar+ ions. Semiconductors. 33(5). 523–528. 9 indexed citations
14.
Kachurin, G. A., К. С. Журавлев, I. E. Tyschenko, et al.. (1998). Effect of ion dose and annealing mode on photoluminescence from SiO2 implanted with Si ions. Semiconductors. 32(11). 1222–1228. 10 indexed citations
15.
Rebohle, L., I. E. Tyschenko, J. von Borany, et al.. (1997). Strong Blue and Violet Light Emission from Silicon- and Germanium-Implanted Silicon-Dioxide Films. MRS Proceedings. 486. 4 indexed citations
16.
Kachurin, G. A., I. E. Tyschenko, К. С. Журавлев, et al.. (1997). Visible and near-infrared luminescence from silicon nanostructures formed by ion implantation and pulse annealing. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 122(3). 571–574. 56 indexed citations
17.
Antonova, I. V., et al.. (1996). Formation of electrically active centers beyond the stopping ranges of ions implanted in heated silicon. Semiconductors. 30(11). 1051–1054. 1 indexed citations
18.
Kachurin, G. A., et al.. (1994). Neutralization of boron in silicon by high-temperature bombardment with argon ions. Semiconductors. 28(3). 313–316. 1 indexed citations
19.
Kachurin, G. A., I. E. Tyschenko, & A. Tybulewicz. (1993). Behavior of boron and nitrogen in a surface layer of silicon during synthesis of buried layers by implantation of N+ ions. Semiconductors. 27(7). 658–662. 1 indexed citations
20.
Kachurin, G. A., et al.. (1993). Roles of implantation temperature and ion dose rate in ion-beam synthesis of buried Si3N3 layers. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 74(3). 399–404. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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