A.K. Gutakovsky

1.6k total citations · 1 hit paper
47 papers, 1.3k citations indexed

About

A.K. Gutakovsky is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, A.K. Gutakovsky has authored 47 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 27 papers in Atomic and Molecular Physics, and Optics and 24 papers in Materials Chemistry. Recurrent topics in A.K. Gutakovsky's work include Semiconductor Quantum Structures and Devices (21 papers), Silicon Nanostructures and Photoluminescence (14 papers) and Semiconductor materials and interfaces (10 papers). A.K. Gutakovsky is often cited by papers focused on Semiconductor Quantum Structures and Devices (21 papers), Silicon Nanostructures and Photoluminescence (14 papers) and Semiconductor materials and interfaces (10 papers). A.K. Gutakovsky collaborates with scholars based in Russia, Germany and South Korea. A.K. Gutakovsky's co-authors include V. Ya. Prinz, V. A. Seleznev, В. В. Преображенский, М. А. Putyato, Т. А. Гаврилова, V. I. Mashanov, S. V. Golod, I. V. Sabinina, Yu. G. Sidorov and G. A. Kachurin and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Surface Science.

In The Last Decade

A.K. Gutakovsky

47 papers receiving 1.2k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Free-standing and overgrown InGaAs/GaAs nanotubes, nanohelices and their arrays

2000 620 citations V. Ya. Prinz, V. A. Seleznev et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
A.K. Gutakovsky Russia	14	571	546	505	466	305	47	1.3k
В. В. Преображенский Russia	14	598 1.0×	783 1.4×	424 0.8×	335 0.7×	225 0.7×	101	1.3k
М. А. Putyato Russia	14	725 1.3×	937 1.7×	435 0.9×	361 0.8×	228 0.7×	136	1.4k
A. Portavoce France	21	652 1.1×	757 1.4×	369 0.7×	583 1.3×	232 0.8×	124	1.3k
P. Vettiger Switzerland	13	708 1.2×	605 1.1×	644 1.3×	187 0.4×	135 0.4×	31	1.4k
Hisato Ogiso Japan	16	496 0.9×	478 0.9×	404 0.8×	452 1.0×	190 0.6×	97	1.2k
D. Araújo Spain	21	822 1.4×	518 0.9×	238 0.5×	849 1.8×	136 0.4×	139	1.4k
H. Moriceau France	23	1.3k 2.3×	431 0.8×	423 0.8×	320 0.7×	66 0.2×	120	1.7k
Michael Deal United States	20	1.4k 2.5×	641 1.2×	433 0.9×	437 0.9×	111 0.4×	82	1.8k
J. Montserrat Spain	20	1.3k 2.3×	450 0.8×	404 0.8×	402 0.9×	204 0.7×	143	1.6k
Frédéric Houzé France	18	465 0.8×	365 0.7×	349 0.7×	343 0.7×	121 0.4×	72	964

Countries citing papers authored by A.K. Gutakovsky

Since Specialization

Citations

This map shows the geographic impact of A.K. Gutakovsky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A.K. Gutakovsky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A.K. Gutakovsky more than expected).

Fields of papers citing papers by A.K. Gutakovsky

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A.K. Gutakovsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A.K. Gutakovsky. The network helps show where A.K. Gutakovsky may publish in the future.

Co-authorship network of co-authors of A.K. Gutakovsky

This figure shows the co-authorship network connecting the top 25 collaborators of A.K. Gutakovsky. A scholar is included among the top collaborators of A.K. Gutakovsky based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A.K. Gutakovsky. A.K. Gutakovsky is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Малин, Т. В., V. G. Mansurov, Tatyana A. Gavrilova, et al.. (2024). Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy. Thin Solid Films. 791. 140246–140246. 6 indexed citations

Sidorov, G. Yu., et al.. (2019). XPS investigation of the ALD Al ₂ O ₃ /HgCdTe heterointerface. Semiconductor Science and Technology. 34(6). 65007–65007. 19 indexed citations

Gutakovsky, A.K., et al.. (2019). Analysis of the Properties of Metal Sulfide Nanocrystals Synthesized by the Langmuir—Blodgett Technique. Journal of Experimental and Theoretical Physics Letters. 109(11). 700–703. 1 indexed citations

Шишкова, Д. К., Т. В. Глушкова, А. Н. Попова, et al.. (2019). MORPHOLOGICAL AND CHEMICAL PROPERTIES OF SPHERICAL AND NEEDLE CALCIUM PHOSPHATE BIONS. Complex Issues of Cardiovascular Diseases. 8(1). 59–69. 2 indexed citations

Putyato, М. А., et al.. (2016). Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates. Journal of Physics Conference Series. 741. 12020–12020. 6 indexed citations

Nikiforov, A. I., et al.. (2012). Initial stage growth of Ge x Si1−x layers and Ge quantum dot formation on Ge x Si1−x surface by MBE. Nanoscale Research Letters. 7(1). 561–561. 16 indexed citations

Gutakovsky, A.K., et al.. (2012). Crystallization of Amorphous Si Nanoclusters in SiO_x Films Using Femtosecond Laser Pulse Annealings. Journal of Nanoscience and Nanotechnology. 12(11). 8694–8699. 10 indexed citations

Yakushev, M. V., A.K. Gutakovsky, I. V. Sabinina, & Yu. G. Sidorov. (2011). Defects in the crystal structure of Cd x Hg1 − x Te layers grown on the Si (310) substrates. Semiconductors. 45(7). 926–934. 9 indexed citations

Galkin, N. G., D. L. Goroshko, E. A. Chusovitin, et al.. (2008). Investigation of Multilayer Silicon Structures with Buried Iron Silicide Nanocrystallites: Growth, Structure, and Properties. Journal of Nanoscience and Nanotechnology. 8(2). 527–534. 3 indexed citations

10.

Никифоров, А. И., Vladimir V. Ulyanov, S. A. Teys, A.K. Gutakovsky, & O. P. Pchelyakov. (2008). The influence of elastic strains on the growth and properties of vertically ordered Ge “hut”-clusters. Thin Solid Films. 517(1). 69–70. 2 indexed citations

11.

Milekhin, A. G., et al.. (2002). Optical vibrational modes in (Cd, Pb, Zn)S quantum dots embedded in Langmuir–Blodgett matrices. Thin Solid Films. 422(1-2). 200–204. 31 indexed citations

12.

Popov, V. P., et al.. (2002). Properties of silicon oversaturated with implanted hydrogen. Thin Solid Films. 403-404. 500–504. 9 indexed citations

13.

Golod, S. V., V. Ya. Prinz, V. I. Mashanov, & A.K. Gutakovsky. (2001). Fabrication of conducting GeSi/Si micro- and nanotubes and helical microcoils. Semiconductor Science and Technology. 16(3). 181–185. 146 indexed citations

14.

Popov, V. P., et al.. (2000). Ellipsometry and microscopy study of nanocrystalline Si:H layers formed by high dose implantation of silicon. Materials Science and Engineering B. 73(1-3). 120–123. 5 indexed citations

15.

Gutakovsky, A.K., et al.. (2000). Cleavage of thin films for X-HREM study of interface quality in heterostructures. Journal of Crystal Growth. 210(1-3). 182–186. 1 indexed citations

16.

Gutakovsky, A.K., et al.. (1999). Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(001). Journal of Crystal Growth. 201-202. 232–235. 4 indexed citations

17.

Kachurin, G. A., I. E. Tyschenko, К. С. Журавлев, et al.. (1997). Visible and near-infrared luminescence from silicon nanostructures formed by ion implantation and pulse annealing. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 122(3). 571–574. 56 indexed citations

18.

Prinz, V. Ya., V. A. Seleznev, & A.K. Gutakovsky. (1996). Novel technique for fabrication of one- and two-dimensional systems. Surface Science. 361-362. 886–889. 2 indexed citations

19.

Sabinina, I. V., et al.. (1992). Defect formation during growth of CdTe(111) and HgCdTe films by molecular beam epitaxy. Journal of Crystal Growth. 117(1-4). 238–243. 20 indexed citations

20.

Gutakovsky, A.K., et al.. (1988). Study of the growth mechanism of modulated structures in the InAsGaAs system. Thin Solid Films. 163. 497–502. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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