К. Д. Щербачев

526 total citations
61 papers, 430 citations indexed

About

К. Д. Щербачев is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computational Mechanics. According to data from OpenAlex, К. Д. Щербачев has authored 61 papers receiving a total of 430 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Electrical and Electronic Engineering, 33 papers in Materials Chemistry and 23 papers in Computational Mechanics. Recurrent topics in К. Д. Щербачев's work include Ion-surface interactions and analysis (20 papers), Silicon and Solar Cell Technologies (17 papers) and ZnO doping and properties (15 papers). К. Д. Щербачев is often cited by papers focused on Ion-surface interactions and analysis (20 papers), Silicon and Solar Cell Technologies (17 papers) and ZnO doping and properties (15 papers). К. Д. Щербачев collaborates with scholars based in Russia, South Korea and Zimbabwe. К. Д. Щербачев's co-authors include A. S. Prosviryakov, N. Yu. Tabachkova, A. Y. Polyakov, N. B. Smirnov, В. Т. Бублик, E. B. Yakimov, S. J. Pearton, In‐Hwan Lee, A. A. Lomov and Ivan Shchemerov and has published in prestigious journals such as SHILAP Revista de lepidopterología, Journal of Applied Physics and Materials Science and Engineering A.

In The Last Decade

К. Д. Щербачев

56 papers receiving 414 citations

Peers

Countries citing papers authored by К. Д. Щербачев

Since Specialization

Citations

This map shows the geographic impact of К. Д. Щербачев's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by К. Д. Щербачев with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites К. Д. Щербачев more than expected).

Fields of papers citing papers by К. Д. Щербачев

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by К. Д. Щербачев. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by К. Д. Щербачев. The network helps show where К. Д. Щербачев may publish in the future.

Co-authorship network of co-authors of К. Д. Щербачев

This figure shows the co-authorship network connecting the top 25 collaborators of К. Д. Щербачев. A scholar is included among the top collaborators of К. Д. Щербачев based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with К. Д. Щербачев. К. Д. Щербачев is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire 2019 ·APL Materials ·A. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov, E. B. Yakimov, В. И. Николаев, С. И. Степанов, А. И. Печников, А. В. Черных, К. Д. Щербачев, (unknown), А. I. Kochkova, A.A. Vasil'ev, S. J. Pearton	45
2	In-depth structural analysis of swift heavy ion irradiation in KY(WO₄)₂ for the fabrication of planar optical waveguides 2019 ·Optical Materials Express ·(unknown), (unknown), F. B. Segerink, (unknown), (unknown), J. Olivares, К. Д. Щербачев, S. N. Yakunin, Igor A. Makhotkin, Sonia M. García‐Blanco	3
3	Study of the origin of the defects in La3Ga5.5Ta0.5O14 single crystals 2019 ·Optical Materials ·Н. С. Козлова, О. А. Бузанов, (unknown), (unknown), (unknown), К. Д. Щербачев, Е. А. Скрылева	6
4	Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments 2017 ·Journal of Applied Physics ·In‐Hwan Lee, A. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov, П. Б. Лагов, (unknown), E. B. Yakimov, К. Д. Щербачев, S. J. Pearton	32
5	Influence of annealing temperature and its atmosphere on the properties of zinc implanted silicon 2017 ·Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques ·(unknown), В. С. Куликаускас, (unknown), К. Д. Щербачев, N. Yu. Tabachkova, (unknown), (unknown), (unknown)	0
6	Structural properties of the formation of zinc-containing nanoparticles obtained by ion implantation in Si (001) and subsequent thermal annealing 2017 ·SHILAP Revista de lepidopterología ·(unknown), N. Yu. Tabachkova, К. Д. Щербачев, Yu. N. Parkhomenko, (unknown), (unknown)	1
7	Strengthening of mechanically alloyed Al-based alloy with high Zr contents 2017 ·Materials Science and Engineering A ·A. S. Prosviryakov, К. Д. Щербачев	26
8	The microstructure of Si surface layers after plasma-immersion He⁺ion implantation and subsequent thermal annealing 2017 ·Journal of Applied Crystallography ·A. A. Lomov, К. Д. Щербачев, Yu. M. Chesnokov, Д. А. Киселев	4
9	Formation of nanoparticles containing zinc in Si(001) by ion-beam implantation and subsequent annealing 2016 ·Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques ·(unknown), К. Д. Щербачев, N. Yu. Tabachkova, (unknown)	2
10	Synthesis and Nanoscale Characterization of LiNbO3 Thin Films Deposited on Al2O3 Substrate by RF Magnetron Sputtering under Electric Field 2016 ·Journal of Nano- and Electronic Physics ·(unknown), (unknown), (unknown), Д. А. Киселев, К. Д. Щербачев, (unknown), (unknown), Ilya V. Kubasov, (unknown), (unknown), (unknown), (unknown), М. Д. Малинкович, Yu. N. Parkhomenko	2
11	Effect of annealing on the structure and phase composition of thin electro-optical lithium niobate films 2014 ·Inorganic Materials ·Д. А. Киселев, (unknown), (unknown), (unknown), К. Д. Щербачев, М. Д. Малинкович, Yu. N. Parkhomenko	19
12	Defect structure transformation after thermal annealing in a surface layer of Zn-implanted Si(001) substrates 2013 ·Journal of Applied Crystallography ·К. Д. Щербачев, (unknown), В. С. Куликаускас, (unknown), (unknown)	2
13	Structure, electrical and magnetic properties, and the origin of the room temperature ferromagnetism in Mn-implanted Si 2009 ·Journal of Experimental and Theoretical Physics ·(unknown), A. B. Granovsky, L. A. Balagurov, (unknown), Yu. N. Parkhomenko, N. S. Perov, Е. А. Ганьшина, В. Т. Бублик, К. Д. Щербачев, A. V. Kartavykh, V. I. Vdovin, Andrei Sapelkin, (unknown), Yu. A. Agafonov, В. И. Зиненко, Andreï Rogalev, Alevtina Smekhova	13
14	Study of structural characteristics of ferromagnetic silicon implanted with manganese 2008 ·Crystallography Reports ·(unknown), Yu. A. Agafonov, L. A. Balagurov, В. Т. Бублик, В. И. Зиненко, N. S. Perov, (unknown), К. Д. Щербачев	2
15	Characterization of InP porous layer by high‐resolution X‐ray diffraction 2007 ·physica status solidi (a) ·В. И. Пунегов, A. A. Lomov, К. Д. Щербачев	18
16	Electrical and structural properties of InSb crystals irradiated with reactor neutrons 2005 ·Physica B Condensed Matter ·V. M. Boĭko, В. Т. Бублик, (unknown), N. G. Kolin, D. I. Merkurisov, К. Д. Щербачев	4
17	The effect ofin situphotoexcitation on the generation of damaged structures during ion implantation into Si wafers 2005 ·Journal of Physics D Applied Physics ·К. Д. Щербачев, В. Т. Бублик, (unknown), (unknown)	7
18	A study of structural perfection of interfaces in Si/SiGe superlattices 2000 ·Crystallography Reports ·V. I. Vdovin, К. Д. Щербачев, (unknown), (unknown), E. H. C. Parker	2
19	Formation of radiation-induced point defects in silicon doped thin films upon ion implantation and activating annealing 1999 ·Crystallography Reports ·В. Т. Бублик, К. Д. Щербачев, (unknown), Yu. N. Parkhomenko, (unknown), (unknown)	1
20	The study of microdefects in Si-doped GaAs single crystals by X-ray diffuse scattering 1995 ·Crystallography Reports ·К. Д. Щербачев, В. Т. Бублик, (unknown)	1

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