А. К. Гутаковский

2.7k total citations
219 papers, 2.0k citations indexed

About

А. К. Гутаковский is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, А. К. Гутаковский has authored 219 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 151 papers in Electrical and Electronic Engineering, 134 papers in Atomic and Molecular Physics, and Optics and 107 papers in Materials Chemistry. Recurrent topics in А. К. Гутаковский's work include Semiconductor materials and interfaces (75 papers), Semiconductor Quantum Structures and Devices (61 papers) and Silicon Nanostructures and Photoluminescence (61 papers). А. К. Гутаковский is often cited by papers focused on Semiconductor materials and interfaces (75 papers), Semiconductor Quantum Structures and Devices (61 papers) and Silicon Nanostructures and Photoluminescence (61 papers). А. К. Гутаковский collaborates with scholars based in Russia, Germany and Belarus. А. К. Гутаковский's co-authors include Л. В. Соколов, Yu. B. Bolkhovityanov, A. S. Deryabin, Т. С. Шамирзаев, Л. И. Федина, А. В. Латышев, O. P. Pchelyakov, К. С. Журавлев, Andrey Chuvilin and S. A. Teys and has published in prestigious journals such as Nature Communications, The Journal of Chemical Physics and Applied Physics Letters.

In The Last Decade

А. К. Гутаковский

207 papers receiving 2.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
А. К. Гутаковский Russia	21	1.3k	1.1k	986	354	165	219	2.0k
M. Stoffel France	26	1.4k 1.1×	1.6k 1.4×	998 1.0×	661 1.9×	161 1.0×	104	2.4k
R. A. Masut Canada	24	1.6k 1.2×	1.6k 1.4×	1.1k 1.1×	344 1.0×	263 1.6×	190	2.4k
G. González-Dı́az Spain	27	2.1k 1.6×	877 0.8×	1.3k 1.3×	286 0.8×	145 0.9×	167	2.4k
I. Mártil Spain	30	2.2k 1.7×	818 0.7×	1.4k 1.4×	274 0.8×	148 0.9×	146	2.6k
X. Wallart France	27	2.0k 1.5×	1.4k 1.3×	1.1k 1.1×	729 2.1×	167 1.0×	162	2.8k
M. Zinke-Allmang Canada	22	585 0.5×	983 0.9×	627 0.6×	417 1.2×	266 1.6×	75	1.9k
M. M. Heyns Belgium	29	2.3k 1.8×	635 0.6×	1.0k 1.1×	253 0.7×	77 0.5×	75	2.6k
Mutsuhiro Shima United States	21	453 0.4×	812 0.7×	906 0.9×	308 0.9×	194 1.2×	63	1.6k
Daniel Poitras Canada	25	1.8k 1.4×	1.1k 1.0×	645 0.7×	455 1.3×	61 0.4×	127	2.5k
R. D. Twesten United States	27	1.7k 1.3×	1.1k 1.0×	1.1k 1.1×	468 1.3×	197 1.2×	59	2.9k

Countries citing papers authored by А. К. Гутаковский

Since Specialization

Citations

This map shows the geographic impact of А. К. Гутаковский's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by А. К. Гутаковский with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites А. К. Гутаковский more than expected).

Fields of papers citing papers by А. К. Гутаковский

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by А. К. Гутаковский. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by А. К. Гутаковский. The network helps show where А. К. Гутаковский may publish in the future.

Co-authorship network of co-authors of А. К. Гутаковский

This figure shows the co-authorship network connecting the top 25 collaborators of А. К. Гутаковский. A scholar is included among the top collaborators of А. К. Гутаковский based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with А. К. Гутаковский. А. К. Гутаковский is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Федина, Л. И., D. V. Sheglov, А. К. Гутаковский, et al.. (2025). Effect of CF4 plasma treatment on the THz radiation absorption of vertically aligned carbon nanotubes. Applied Surface Science. 689. 162537–162537.

Шамирзаев, Т. С., et al.. (2024). Thin Ga(Sb,P)/GaP quantum wells with indirect band gap: Crystal structure, energy spectrum, exciton recombination and spin dynamics. Journal of Luminescence. 277. 120888–120888.

Nebogatikova, Nadezhda A., et al.. (2024). 2D diamond structures in multilayer graphene: Simulation and experimental observation. Carbon. 220. 118832–118832. 3 indexed citations

Малин, Т. В., V. G. Mansurov, S. V. Goryaĭnov, et al.. (2024). Tackling residual tensile stress in AlN-on-Si nucleation layers via the controlled Si(111) surface nitridation. Surfaces and Interfaces. 51. 104817–104817. 2 indexed citations

Tyschenko, I. E., et al.. (2024). Change in the InSb nanocrystal growth direction at the Si/SiO2 interface during ion-beam synthesis. Materials Letters. 373. 137114–137114.

Дмитриев, Д. В., et al.. (2023). Annealing effect on the barrier characteristics and interface properties of Au/Pt/Ti/n-InAlAs Schottky contacts. Surfaces and Interfaces. 39. 102920–102920. 2 indexed citations

Гутаковский, А. К., et al.. (2022). InGaAlAs/InAlAs heterostructures for electro-absorption modulator. Письма в журнал технической физики. 48(7). 33–33. 1 indexed citations

Putyato, М. А., O. S. Komkov, A. K. Bakarov, et al.. (2022). Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration. Nanomaterials. 12(24). 4449–4449. 13 indexed citations

Chusovitin, E. A., et al.. (2022). Influence of the temperature and substrate modification on the formation of continuous GaSb film on Si(111) by solid phase epitaxy. Japanese Journal of Applied Physics. 62(SD). SD1005–SD1005. 2 indexed citations

10.

Naumova, O. V., et al.. (2021). Extraction of the components of effective mobility in thin films. Journal of Physics D Applied Physics. 54(25). 255105–255105. 1 indexed citations

11.

Popov, V. P., А. К. Гутаковский, I. E. Tyschenko, et al.. (2021). Robust semiconductor-on-ferroelectric structures with hafnia–zirconia–alumina UTBOX stacks compatible with CMOS technology. Journal of Physics D Applied Physics. 54(22). 225101–225101. 7 indexed citations

12.

Маликов, А. Г., А. М. Оришич, Н. В. Булина, et al.. (2021). Effect of the structure and the phase composition on the mechanical properties of Al–Cu–Li alloy laser welds. Materials Science and Engineering A. 809. 140947–140947. 12 indexed citations

13.

Федина, Л. И., А. К. Гутаковский, & Т. С. Шамирзаев. (2018). On the structure and photoluminescence of dislocations in silicon. Journal of Applied Physics. 124(5). 8 indexed citations

14.

Файнер, Н. И., et al.. (2017). Effect of synthesis conditions on the structure and properties of new SiC x N y M z materials for spintronics. Journal of Structural Chemistry. 58(8). 1493–1502. 2 indexed citations

15.

Shevlyagin, A. V., D. L. Goroshko, E. A. Chusovitin, et al.. (2017). A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μW emission power at 1.5 μm. Journal of Applied Physics. 121(11). 11 indexed citations

16.

Bakarov, A. K., et al.. (2017). Determining the structure of energy in heterostructures with diffuse interfaces. Bulletin of the Russian Academy of Sciences Physics. 81(9). 1052–1057. 1 indexed citations

17.

Putyato, М. А., А. К. Гутаковский, A. S. Kozhukhov, et al.. (2016). Formation and crystal structure of GaSb/GaP quantum dots. Bulletin of the Russian Academy of Sciences Physics. 80(1). 17–22. 4 indexed citations

18.

Bolkhovityanov, Yu. B., А. К. Гутаковский, A. S. Deryabin, & Л. В. Соколов. (2016). Experimental observation of motion of edge dislocations in Ge/Ge x Si1–x /Si(001) (x = 0.2–0.6) heterostructures. Journal of Experimental and Theoretical Physics. 123(5). 832–837. 1 indexed citations

19.

Golyashov, V. A., et al.. (2015). InAs-based metal-oxide-semiconductor structure formation in low-energy Townsend discharge. Applied Physics Letters. 107(17). 10 indexed citations

20.

Терещенко, О. Е., V. A. Golyashov, С. В. Еремеев, et al.. (2015). Ferromagnetic HfO2/Si/GaAs interface for spin-polarimetry applications. Applied Physics Letters. 107(12). 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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