T. Moudakir

728 total citations
34 papers, 633 citations indexed

About

T. Moudakir is a scholar working on Condensed Matter Physics, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, T. Moudakir has authored 34 papers receiving a total of 633 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Condensed Matter Physics, 14 papers in Materials Chemistry and 12 papers in Mechanics of Materials. Recurrent topics in T. Moudakir's work include GaN-based semiconductor devices and materials (32 papers), ZnO doping and properties (13 papers) and Ga2O3 and related materials (12 papers). T. Moudakir is often cited by papers focused on GaN-based semiconductor devices and materials (32 papers), ZnO doping and properties (13 papers) and Ga2O3 and related materials (12 papers). T. Moudakir collaborates with scholars based in France, United States and United Kingdom. T. Moudakir's co-authors include S. Gautier, G. Orsal, Jean‐Paul Salvestrini, G. Patriarche, A. Ougazzaden, Youssef El Gmili, Konstantinos Pantzas, A. Ougazzaden, Suresh Sundaram and Paul L. Voss and has published in prestigious journals such as Applied Physics Letters, Acta Materialia and Thin Solid Films.

In The Last Decade

T. Moudakir

34 papers receiving 615 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Moudakir France 16 525 302 283 194 167 34 633
Youssef El Gmili France 16 556 1.1× 288 1.0× 467 1.7× 252 1.3× 135 0.8× 36 803
Vitaly Z. Zubialevich Ireland 14 421 0.8× 251 0.8× 228 0.8× 192 1.0× 88 0.5× 70 552
Tanya Paskova United States 14 580 1.1× 278 0.9× 284 1.0× 225 1.2× 137 0.8× 25 640
K. Y. Lim South Korea 13 417 0.8× 252 0.8× 268 0.9× 216 1.1× 109 0.7× 44 555
J. I. Hwang Japan 12 514 1.0× 327 1.1× 398 1.4× 188 1.0× 116 0.7× 23 686
S. B. Thapa Germany 14 368 0.7× 201 0.7× 273 1.0× 203 1.0× 98 0.6× 26 522
G. Orsal France 12 316 0.6× 161 0.5× 189 0.7× 147 0.8× 109 0.7× 21 412
Tsung‐Ting Kao United States 15 552 1.1× 284 0.9× 237 0.8× 232 1.2× 71 0.4× 31 641
Jun Norimatsu Japan 6 484 0.9× 344 1.1× 209 0.7× 108 0.6× 97 0.6× 7 530
Li Chang Taiwan 12 349 0.7× 180 0.6× 208 0.7× 256 1.3× 88 0.5× 33 502

Countries citing papers authored by T. Moudakir

Since Specialization
Citations

This map shows the geographic impact of T. Moudakir's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Moudakir with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Moudakir more than expected).

Fields of papers citing papers by T. Moudakir

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Moudakir. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Moudakir. The network helps show where T. Moudakir may publish in the future.

Co-authorship network of co-authors of T. Moudakir

This figure shows the co-authorship network connecting the top 25 collaborators of T. Moudakir. A scholar is included among the top collaborators of T. Moudakir based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Moudakir. T. Moudakir is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tran, Tuan M., Phuong Vuong, T. Moudakir, et al.. (2024). Transferrable GaN-based Micro-LED heterostructures grown on h-BN for optogenetic applications. Journal of Crystal Growth. 650. 127979–127979. 2 indexed citations
2.
Li, Xiangyang, Suresh Sundaram, P. Disseix, et al.. (2015). AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm. Optical Materials Express. 5(2). 380–380. 28 indexed citations
3.
Orsal, G., Youssef El Gmili, Nicolas Fressengeas, et al.. (2014). Bandgap energy bowing parameter of strained and relaxed InGaN layers. Optical Materials Express. 4(5). 1030–1030. 84 indexed citations
4.
Gautier, S., Youssef El Gmili, T. Moudakir, et al.. (2013). Nondestructive mapping of chemical composition and structural qualities of group III-nitride nanowires using submicron beam synchrotron-based X-ray diffraction. Thin Solid Films. 541. 46–50. 1 indexed citations
5.
Gmili, Youssef El, G. Orsal, Konstantinos Pantzas, et al.. (2013). Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study. Acta Materialia. 61(17). 6587–6596. 40 indexed citations
6.
Pantzas, Konstantinos, G. Patriarche, D. Troadec, et al.. (2012). Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy. Nanotechnology. 23(45). 455707–455707. 24 indexed citations
7.
Rogers, David J., A. Ougazzaden, T. Moudakir, et al.. (2012). Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8263. 82630R–82630R. 7 indexed citations
8.
Gautier, S., M. Abid, T. Moudakir, et al.. (2011). Application of dilute boron B(Al,In,Ga)N alloys for UV light sources. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7940. 79400X–79400X. 3 indexed citations
9.
Salvestrini, Jean‐Paul, Ali Ahaitouf, S. Gautier, et al.. (2011). Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices. Applied Physics Letters. 99(22). 34 indexed citations
10.
Salvestrini, Jean‐Paul, Ali Ahaitouf, S. Gautier, et al.. (2011). Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 13 indexed citations
11.
Djebbour, Zakaria, Anne Migan‐Dubois, C. Pareige, et al.. (2011). Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films. Applied Physics Letters. 99(6). 4 indexed citations
12.
Abid, M., T. Moudakir, S. Gautier, et al.. (2011). New generation of Distributed Bragg Reflectors based on BAlN/AlN structures for deep UV-optoelectronic applications. 3. JTuD5–JTuD5. 1 indexed citations
13.
Abid, M., T. Moudakir, Zakaria Djebbour, et al.. (2010). Blue–violet boron-based Distributed Bragg Reflectors for VCSEL application. Journal of Crystal Growth. 315(1). 283–287. 17 indexed citations
14.
Ougazzaden, A., David J. Rogers, F. Hosseini Téhérani, et al.. (2010). Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7603. 76031D–76031D. 6 indexed citations
15.
Gautier, S., G. Patriarche, T. Moudakir, et al.. (2010). Deep structural analysis of novel BGaN material layers grown by MOVPE. Journal of Crystal Growth. 315(1). 288–291. 33 indexed citations
16.
Moudakir, T., M. Abid, Bich‐Thuy Doan, et al.. (2010). Asymmetrical design for non-relaxed near-UV AlGaN/GaN distributed Bragg reflectors. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7847. 78470B–78470B. 1 indexed citations
17.
Patriarche, G., S. Gautier, T. Moudakir, et al.. (2010). Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth. Journal of Crystal Growth. 315(1). 160–163. 30 indexed citations
18.
Rogers, David J., F. Hosseini Téhérani, T. Moudakir, et al.. (2009). Microstructural compositional, and optical characterization of GaN grown by metal organic vapor phase epitaxy on ZnO epilayers. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 27(3). 1655–1657. 5 indexed citations
19.
Moudakir, T., G. Orsal, A. A. Sirenko, et al.. (2008). Structural and morphological studies of GaN thin films grown on different oriented LiNbO3substrates by MOVPE. The European Physical Journal Applied Physics. 43(3). 295–299. 2 indexed citations
20.
Moudakir, T., K. Djessas, & G. Massé. (2004). CuIn1−x GaxS2 wide gap absorbers grown by close-spaced vapor transport. Journal of Crystal Growth. 270(3-4). 517–526. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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