Maosheng Hao

802 total citations
16 papers, 695 citations indexed

About

Maosheng Hao is a scholar working on Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Maosheng Hao has authored 16 papers receiving a total of 695 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Condensed Matter Physics, 9 papers in Materials Chemistry and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Maosheng Hao's work include GaN-based semiconductor devices and materials (12 papers), Ga2O3 and related materials (8 papers) and ZnO doping and properties (6 papers). Maosheng Hao is often cited by papers focused on GaN-based semiconductor devices and materials (12 papers), Ga2O3 and related materials (8 papers) and ZnO doping and properties (6 papers). Maosheng Hao collaborates with scholars based in Japan and China. Maosheng Hao's co-authors include Tomoya Sugahara, Yoshiki Naoi, Shiro Sakai, Hisao Satô, Satoshi Kurai, Katsushi Nishino, Kenji Yamashita, S. Tottori, Linda T. Romano and Shiro Sakai and has published in prestigious journals such as Japanese Journal of Applied Physics, Journal of Crystal Growth and Chinese Physics Letters.

In The Last Decade

Maosheng Hao

16 papers receiving 664 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Maosheng Hao Japan	8	602	287	279	257	255	16	695
Takuji Okahisa Japan	7	644 1.1×	301 1.0×	335 1.2×	223 0.9×	249 1.0×	8	686
V. Kirchner Germany	12	648 1.1×	356 1.2×	328 1.2×	203 0.8×	237 0.9×	20	746
W. Van der Stricht Belgium	13	673 1.1×	299 1.0×	305 1.1×	322 1.3×	193 0.8×	29	772
Seiji Nakahata Japan	6	605 1.0×	282 1.0×	295 1.1×	155 0.6×	233 0.9×	9	653
T. W. Weeks United States	12	598 1.0×	192 0.7×	228 0.8×	207 0.8×	324 1.3×	23	674
T. Prokofyeva United States	9	670 1.1×	247 0.9×	250 0.9×	184 0.7×	272 1.1×	14	739
A. S. Usikov Russia	13	638 1.1×	290 1.0×	359 1.3×	198 0.8×	319 1.3×	45	737
S. E. Hooper United Kingdom	17	720 1.2×	248 0.9×	269 1.0×	463 1.8×	374 1.5×	52	834
Kensaku Motoki Japan	6	559 0.9×	257 0.9×	284 1.0×	160 0.6×	245 1.0×	6	603
Tomoya Sugahara Japan	12	804 1.3×	309 1.1×	345 1.2×	376 1.5×	367 1.4×	18	900

Countries citing papers authored by Maosheng Hao

Since Specialization

Citations

This map shows the geographic impact of Maosheng Hao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Maosheng Hao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Maosheng Hao more than expected).

Fields of papers citing papers by Maosheng Hao

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Maosheng Hao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Maosheng Hao. The network helps show where Maosheng Hao may publish in the future.

Co-authorship network of co-authors of Maosheng Hao

This figure shows the co-authorship network connecting the top 25 collaborators of Maosheng Hao. A scholar is included among the top collaborators of Maosheng Hao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Maosheng Hao. Maosheng Hao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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16 of 16 papers shown

Hao, Maosheng, Takashi Egawa, & Hiroyasu Ishikawa. (2005). Maskless lateral epitaxial over growth of GaN films on in situ etched sapphire substrates by metalorganic chemical vapor deposition. Journal of Crystal Growth. 285(4). 466–472. 4 indexed citations

Sakai, Masahiro, Takashi Egawa, Maosheng Hao, & Hiroyasu Ishikawa. (2004). Effect of Various Interlayers on Epiwafer Bowing in AlGaN/GaN High-Electron-Mobility Transistor Structures. Japanese Journal of Applied Physics. 43(12). 8019–8023. 21 indexed citations

Liu, Yang, Takashi Egawa, Hiroyasu Ishikawa, et al.. (2004). High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission. Journal of Crystal Growth. 264(1-3). 159–164. 12 indexed citations

Liu, Yang, Takashi Egawa, Hiroyasu Ishikawa, Baijun Zhang, & Maosheng Hao. (2004). Influence of Growth Temperature on Quaternary AlInGaN Epilayers for Ultraviolet Emission Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics. 43(5R). 2414–2414. 14 indexed citations

Youn, Doo‐Hyeb, M. Lachab, Maosheng Hao, et al.. (1999). Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics. 38(2R). 631–631. 39 indexed citations

Hao, Maosheng, T. Sugahara, S. Tottori, et al.. (1998). Correlation between dislocations and luminescence in GaN. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3419. 34190J–34190J. 2 indexed citations

Youn, Doo‐Hyeb, Maosheng Hao, Yoshiki Naoi, Sourindra Mahanty, & Shiro Sakai. (1998). Comparison and Investigation of Ohmic Characteristics in the Ni/AuZn and Cr/AuZn Metal Schemes. Japanese Journal of Applied Physics. 37(9R). 4667–4667. 6 indexed citations

Sugahara, Tomoya, Hisao Satô, Maosheng Hao, et al.. (1998). Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN. Japanese Journal of Applied Physics. 37(4A). L398–L398. 405 indexed citations

Sugahara, Tomoya, Maosheng Hao, Tao Wang, et al.. (1998). Role of Dislocation in InGaN Phase Separation. Japanese Journal of Applied Physics. 37(10B). L1195–L1195. 107 indexed citations

10.

Youn, Doo‐Hyeb, Maosheng Hao, Hisao Satô, et al.. (1998). Ohmic Contact to P-Type GaN. Japanese Journal of Applied Physics. 37(4R). 1768–1768. 27 indexed citations

11.

Satô, Hisao, Tomoya Sugahara, Maosheng Hao, et al.. (1998). Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics. 37(2R). 626–626. 7 indexed citations

12.

Tottori, S., Hisao Satô, Maosheng Hao, et al.. (1998). Lateral Overgrowth of Thick GaN on Patterned GaN Substrate by Sublimation Technique. Japanese Journal of Applied Physics. 37(8R). 4475–4475. 7 indexed citations

13.

Hao, Maosheng, et al.. (1997). A theoretical model for the tilt of the epilayers. Journal of Crystal Growth. 178(3). 276–279. 7 indexed citations

14.

Hao, Maosheng, et al.. (1997). Porous GaAs formed by a two-step anodization process. Journal of Crystal Growth. 179(3-4). 661–664. 29 indexed citations

15.

Hao, Maosheng, et al.. (1996). Growth of GaAs on Si by Using a Thin Si Film as Buffer Layer. Chinese Physics Letters. 13(1). 42–45. 4 indexed citations

16.

Hao, Maosheng, Tetsuo Soga, Takashi Jimbo, et al.. (1996). Characterization and Improvement of GaAs Layers Grown on Si Using an Ultrathin a-Si Film as a Buffer Layer. Japanese Journal of Applied Physics. 35(8A). L960–L960. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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