G. Massé

744 total citations
47 papers, 654 citations indexed

About

G. Massé is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, G. Massé has authored 47 papers receiving a total of 654 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 34 papers in Materials Chemistry and 16 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in G. Massé's work include Chalcogenide Semiconductor Thin Films (33 papers), Quantum Dots Synthesis And Properties (29 papers) and Semiconductor materials and interfaces (9 papers). G. Massé is often cited by papers focused on Chalcogenide Semiconductor Thin Films (33 papers), Quantum Dots Synthesis And Properties (29 papers) and Semiconductor materials and interfaces (9 papers). G. Massé collaborates with scholars based in France, Morocco and Canada. G. Massé's co-authors include K. Djessas, F. Guastavino, Nobuyuki Yamamoto, C. Llinarès, J.L. Gauffier, M. F. Lawrence, T. Moudakir, A. Bonnet, G. Debiais and M. Morsli and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and Thin Solid Films.

In The Last Decade

G. Massé

45 papers receiving 617 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
G. Massé France	16	611	584	188	19	17	47	654
Hiroaki Matsushita Japan	11	612 1.0×	584 1.0×	103 0.5×	70 3.7×	28 1.6×	45	667
G. S. Horner United States	12	317 0.5×	179 0.3×	292 1.6×	22 1.2×	4 0.2×	24	423
Y. Cuminal France	14	537 0.9×	288 0.5×	264 1.4×	13 0.7×	12 0.7×	50	584
Thomas Schwarzl Austria	16	471 0.8×	339 0.6×	326 1.7×	59 3.1×	15 0.9×	39	609
María C. Tamargo United States	11	267 0.4×	189 0.3×	204 1.1×	13 0.7×	16 0.9×	45	342
Б.А. Акимов Russia	11	268 0.4×	216 0.4×	189 1.0×	26 1.4×	6 0.4×	47	360
Johan Pohl Germany	7	300 0.5×	320 0.5×	111 0.6×	12 0.6×	37 2.2×	10	372
G. A. Medvedkin Russia	13	378 0.6×	341 0.6×	206 1.1×	51 2.7×	7 0.4×	46	448
M. C. Sexton Ireland	8	442 0.7×	178 0.3×	81 0.4×	7 0.4×	7 0.4×	32	492
W. Kühn Germany	14	459 0.8×	284 0.5×	372 2.0×	8 0.4×	7 0.4×	34	529

Countries citing papers authored by G. Massé

Since Specialization

Citations

This map shows the geographic impact of G. Massé's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Massé with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Massé more than expected).

Fields of papers citing papers by G. Massé

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Massé. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Massé. The network helps show where G. Massé may publish in the future.

Co-authorship network of co-authors of G. Massé

This figure shows the co-authorship network connecting the top 25 collaborators of G. Massé. A scholar is included among the top collaborators of G. Massé based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Massé. G. Massé is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Godet, Julien, et al.. (2023). Experimental characterization of quasi-2-dimension nanoporous gold ultra-thin film from nano to micro length scale. Thin Solid Films. 787. 140136–140136.

Moudakir, T., K. Djessas, & G. Massé. (2004). CuIn1−x GaxS2 wide gap absorbers grown by close-spaced vapor transport. Journal of Crystal Growth. 270(3-4). 517–526. 12 indexed citations

Djessas, K., et al.. (2004). Diffusion of Cu, In, and Ga in In2Se3/CuGaSe2/SnO2 thin film photovoltaic structures. Journal of Applied Physics. 95(8). 4111–4116. 30 indexed citations

Massé, G., K. Djessas, C. Monty, & F. Sibieude. (2002). Morphology of Cu(In,Ga)Se2 thin films grown by close-spaced vapor transport from sources with different grain sizes. Thin Solid Films. 414(2). 192–198. 8 indexed citations

Guastavino, F., et al.. (2000). SnS thin films grown by close-spaced vapor transport. Journal of Materials Science Letters. 19(23). 2135–2137. 33 indexed citations

Djessas, K., et al.. (2000). CuInS[sub 2] Thin Films for Solar Cell Applications. Journal of The Electrochemical Society. 147(4). 1235–1235. 32 indexed citations

Morsli, M., et al.. (1998). Electrical characterisation of CuInSe2 thin films for solar cells applications. Optical Materials. 9(1-4). 511–515. 10 indexed citations

Massé, G. & K. Djessas. (1997). X-ray photoemission studies and energy-band diagrams of (In,Se)–CuInSe2/SnO2 heterostructures. Journal of Applied Physics. 82(2). 825–829. 5 indexed citations

Massé, G. & K. Djessas. (1995). A new photovoltaic effect from CuInSe2 (or related materials)/SnO2 structures. Thin Solid Films. 257(1). 137–138. 6 indexed citations

10.

Massé, G., et al.. (1993). Préparation et étude de couches minces de CuXY2 (X = Ga, In ; Y = Se, Te) pour applications en cellules solaires. Journal de Physique III. 3(11). 2087–2099. 5 indexed citations

11.

Massé, G.. (1990). Concerning lattice defects and defect levels in CuInSe2 and the I-III-VI2 compounds. Journal of Applied Physics. 68(5). 2206–2210. 61 indexed citations

12.

Massé, G., et al.. (1986). S-vacancy energy levels in AgInS2. Journal of Applied Physics. 59(5). 1544–1547. 22 indexed citations

13.

Massé, G., et al.. (1986). Lattice defects in I-III-VI2 compounds. Journal of Physics and Chemistry of Solids. 47(1). 99–104. 32 indexed citations

14.

Massé, G.. (1986). Cation Vacancy Acceptor in AgGaSe2 and Some I-III-VI2 Compounds. physica status solidi (a). 93(2). K177–K179. 3 indexed citations

15.

Massé, G., et al.. (1985). Donor‐Acceptor Pair Transitions in AgInS₂. physica status solidi (b). 131(2). 20 indexed citations

16.

Massé, G., et al.. (1981). Luminescence and lattice defects in Cu In S2. Journal of Physics and Chemistry of Solids. 42(6). 449–454. 32 indexed citations

17.

Massé, G., et al.. (1980). Evidence of a donor-acceptor type transition in CuGaSe2. Journal de physique. 41(7). 707–712. 8 indexed citations

18.

Massé, G., et al.. (1979). Growth of single crystals of cinnabar (α‐HgS) at rather low temperature. Kristall und Technik. 14(1). 5–8. 4 indexed citations

19.

Massé, G., et al.. (1977). Cathodoluminescence of cinnabar evidence of a donor–acceptor-type transition. physica status solidi (a). 39(1). 125–131. 8 indexed citations

20.

Massé, G., et al.. (1971). Obtention de couches minces de sulfure de mercure (α-HgS) par evaporation sous vide et traitement thermique. Thin Solid Films. 8(6). 397–409. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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