S. Gautier

1.2k total citations
67 papers, 1.0k citations indexed

About

S. Gautier is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, S. Gautier has authored 67 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 58 papers in Condensed Matter Physics, 25 papers in Electrical and Electronic Engineering and 25 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in S. Gautier's work include GaN-based semiconductor devices and materials (58 papers), Ga2O3 and related materials (25 papers) and Metal and Thin Film Mechanics (22 papers). S. Gautier is often cited by papers focused on GaN-based semiconductor devices and materials (58 papers), Ga2O3 and related materials (25 papers) and Metal and Thin Film Mechanics (22 papers). S. Gautier collaborates with scholars based in France, United States and United Kingdom. S. Gautier's co-authors include A. Ougazzaden, T. Moudakir, Paul L. Voss, G. Patriarche, Jean‐Paul Salvestrini, Konstantinos Pantzas, G. Orsal, Yacine Halfaya, A. A. Sirenko and Zakaria Djebbour and has published in prestigious journals such as Applied Physics Letters, Scientific Reports and ACS Applied Materials & Interfaces.

In The Last Decade

S. Gautier

65 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Gautier France 22 762 470 441 383 296 67 1.0k
S.‐L. Sahonta United Kingdom 19 664 0.9× 504 1.1× 415 0.9× 379 1.0× 219 0.7× 45 1.0k
M. Poschenrieder Germany 10 540 0.7× 460 1.0× 333 0.8× 431 1.1× 218 0.7× 13 850
M. Androulidaki Greece 20 485 0.6× 686 1.5× 378 0.9× 552 1.4× 114 0.4× 106 1.2k
S. Nagai Japan 9 418 0.5× 463 1.0× 225 0.5× 449 1.2× 139 0.5× 19 894
Thomas Hempel Germany 20 1.0k 1.3× 688 1.5× 579 1.3× 562 1.5× 365 1.2× 60 1.4k
U. Chowdhury United States 19 892 1.2× 283 0.6× 497 1.1× 587 1.5× 127 0.4× 45 1.1k
Martin Frentrup United Kingdom 19 684 0.9× 330 0.7× 391 0.9× 277 0.7× 201 0.7× 65 825
Kenji Tsubaki Japan 11 1.1k 1.4× 516 1.1× 767 1.7× 225 0.6× 179 0.6× 18 1.2k
Zachary Lochner United States 16 872 1.1× 442 0.9× 479 1.1× 332 0.9× 192 0.6× 39 1.0k
David Segev United States 9 621 0.8× 752 1.6× 530 1.2× 425 1.1× 106 0.4× 11 1.1k

Countries citing papers authored by S. Gautier

Since Specialization
Citations

This map shows the geographic impact of S. Gautier's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Gautier with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Gautier more than expected).

Fields of papers citing papers by S. Gautier

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Gautier. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Gautier. The network helps show where S. Gautier may publish in the future.

Co-authorship network of co-authors of S. Gautier

This figure shows the co-authorship network connecting the top 25 collaborators of S. Gautier. A scholar is included among the top collaborators of S. Gautier based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Gautier. S. Gautier is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tran, Tuan M., Phuong Vuong, T. Moudakir, et al.. (2024). Transferrable GaN-based Micro-LED heterostructures grown on h-BN for optogenetic applications. Journal of Crystal Growth. 650. 127979–127979. 2 indexed citations
2.
Kumar, Mahesh, Yacine Halfaya, Mathieu Lazerges, et al.. (2023). High Electron Mobility Transistor (HEMT) based hydrogen sensor for deep-surface applications: Effect of Air and N2 atmosphere. International Journal of Hydrogen Energy. 55. 1514–1522. 2 indexed citations
3.
Vuong, Phuong, G. Patriarche, S. Gautier, et al.. (2023). Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template. Advanced Materials Technologies. 8(15). 9 indexed citations
4.
Ahaitouf, Ali, Suresh Sundaram, Phuong Vuong, et al.. (2021). Natural Boron and 10B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal–Semiconductor–Metal Neutron Detectors. ACS Omega. 7(1). 804–809. 13 indexed citations
5.
Rogers, David J., F. Hosseini Téhérani, P. Bove, et al.. (2021). Sharp/tuneable UVC selectivity and extreme solar blindness in nominally undoped Ga2O3 MSM photodetectors grown by pulsed laser deposition. HAL (Le Centre pour la Communication Scientifique Directe). 82–82. 2 indexed citations
6.
Vuong, Phuong, Suresh Sundaram, G. Patriarche, et al.. (2020). Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN. ACS Applied Materials & Interfaces. 12(49). 55460–55466. 21 indexed citations
7.
Sundaram, Suresh, Taha Ayari, Phuong Vuong, et al.. (2020). Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates. Scientific Reports. 10(1). 21709–21709. 14 indexed citations
8.
Sundaram, Suresh, Xin Li, Yacine Halfaya, et al.. (2019). Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride. Advanced Materials Interfaces. 6(16). 18 indexed citations
9.
Halfaya, Yacine, Muhammad Arif, Taha Ayari, et al.. (2019). Nanopyramid-based absorber to boost the efficiency of InGaN solar cells. Solar Energy. 190. 93–103. 10 indexed citations
10.
11.
Rajan, Akhil, David J. Rogers, Cuong Ton‐That, et al.. (2016). Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer. Journal of Physics D Applied Physics. 49(31). 315105–315105. 16 indexed citations
12.
Gautier, S., Youssef El Gmili, T. Moudakir, et al.. (2013). Nondestructive mapping of chemical composition and structural qualities of group III-nitride nanowires using submicron beam synchrotron-based X-ray diffraction. Thin Solid Films. 541. 46–50. 1 indexed citations
13.
Gautier, S., et al.. (2012). AlGaN/GaN HEMTsに対するBGaNバックバリアの研究. The European Physical Journal Applied Physics. 60(3). 1–30101. 1 indexed citations
14.
Gautier, S., M. Abid, T. Moudakir, et al.. (2011). Application of dilute boron B(Al,In,Ga)N alloys for UV light sources. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7940. 79400X–79400X. 3 indexed citations
15.
Salvestrini, Jean‐Paul, Ali Ahaitouf, S. Gautier, et al.. (2011). Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices. Applied Physics Letters. 99(22). 34 indexed citations
16.
Abid, M., T. Moudakir, Zakaria Djebbour, et al.. (2010). Blue–violet boron-based Distributed Bragg Reflectors for VCSEL application. Journal of Crystal Growth. 315(1). 283–287. 17 indexed citations
17.
Ougazzaden, A., David J. Rogers, F. Hosseini Téhérani, et al.. (2010). Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7603. 76031D–76031D. 6 indexed citations
18.
Gautier, S., G. Patriarche, T. Moudakir, et al.. (2010). Deep structural analysis of novel BGaN material layers grown by MOVPE. Journal of Crystal Growth. 315(1). 288–291. 33 indexed citations
19.
Moudakir, T., G. Orsal, A. A. Sirenko, et al.. (2008). Structural and morphological studies of GaN thin films grown on different oriented LiNbO3substrates by MOVPE. The European Physical Journal Applied Physics. 43(3). 295–299. 2 indexed citations
20.
Gautier, S., et al.. (2008). Raman scattering study of BxGa1–xN growth on AlN template substrate. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(9). 3051–3053. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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