L. Largeau

763 total citations
20 papers, 609 citations indexed

About

L. Largeau is a scholar working on Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, L. Largeau has authored 20 papers receiving a total of 609 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Condensed Matter Physics, 8 papers in Materials Chemistry and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in L. Largeau's work include GaN-based semiconductor devices and materials (9 papers), Metal and Thin Film Mechanics (6 papers) and Ga2O3 and related materials (5 papers). L. Largeau is often cited by papers focused on GaN-based semiconductor devices and materials (9 papers), Metal and Thin Film Mechanics (6 papers) and Ga2O3 and related materials (5 papers). L. Largeau collaborates with scholars based in France, Germany and Russia. L. Largeau's co-authors include Maria Tchernycheva, Jean‐Christophe Harmand, F. H. Julien, Gwénolé Jacopin, Lorenzo Rigutti, G. É. Cirlin, G. Patriarche, D L Dheeraj, Andrés de Luna Bugallo and Frank Glas and has published in prestigious journals such as Physical Review Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

L. Largeau

20 papers receiving 597 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
L. Largeau France	13	407	237	225	215	214	20	609
G. A. Petersen United States	15	399 1.0×	261 1.1×	244 1.1×	112 0.5×	483 2.3×	31	802
Karl Engl Germany	10	378 0.9×	200 0.8×	241 1.1×	125 0.6×	262 1.2×	20	659
Shiro Takeno Japan	12	194 0.5×	229 1.0×	94 0.4×	97 0.5×	183 0.9×	46	516
Frank Lipski Germany	14	520 1.3×	264 1.1×	210 0.9×	96 0.4×	127 0.6×	26	554
R. D. Horning United States	12	298 0.7×	168 0.7×	346 1.5×	129 0.6×	314 1.5×	31	577
В. В. Ратников Russia	16	561 1.4×	380 1.6×	230 1.0×	172 0.8×	318 1.5×	79	799
В. Н. Бессолов Russia	14	246 0.6×	220 0.9×	421 1.9×	208 1.0×	531 2.5×	71	764
E. P. Amaladass India	11	190 0.5×	184 0.8×	206 0.9×	84 0.4×	87 0.4×	58	431
H. P. D. Schenk France	17	595 1.5×	254 1.1×	206 0.9×	176 0.8×	238 1.1×	41	705

Countries citing papers authored by L. Largeau

Since Specialization

Citations

This map shows the geographic impact of L. Largeau's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Largeau with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Largeau more than expected).

Fields of papers citing papers by L. Largeau

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Largeau. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Largeau. The network helps show where L. Largeau may publish in the future.

Co-authorship network of co-authors of L. Largeau

This figure shows the co-authorship network connecting the top 25 collaborators of L. Largeau. A scholar is included among the top collaborators of L. Largeau based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Largeau. L. Largeau is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

1.

Mancini, Lorenzo, Martina Morassi, O. Brandt, et al.. (2019). Optical properties of GaN nanowires grown on chemical vapor deposited-graphene. Nanotechnology. 30(21). 214005–214005. 10 indexed citations

2.

Caprara, S., M. Grilli, Christophe Brun, et al.. (2016). Confinement of superconducting fluctuations due to emergent electronic inhomogeneities. Physical review. B.. 93(14). 36 indexed citations

3.

Tchernycheva, Maria, Vladimir Neplokh, H. Zhang, et al.. (2015). Core–shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping. Nanoscale. 7(27). 11692–11701. 65 indexed citations

4.

Godard, P., L. Largeau, G. Patriarche, et al.. (2015). Nondestructive three-dimensional imaging of crystal strain and rotations in an extended bonded semiconductor heterostructure. Physical Review B. 92(20). 23 indexed citations

5.

Michalas, L., Thomas Maroutian, Guillaume Agnus, et al.. (2014). Temperature dependence of the conduction mechanisms through a Pb(Zr,Ti)O3 thin film. Thin Solid Films. 563. 32–35. 8 indexed citations

6.

Tchernycheva, Maria, Lorenzo Rigutti, Gwénolé Jacopin, et al.. (2012). Photovoltaic properties of GaAsP core–shell nanowires on Si(001) substrate. Nanotechnology. 23(26). 265402–265402. 38 indexed citations

7.

Solignac, A., R. Guerrero, Philippe Gogol, et al.. (2012). Dual Antiferromagnetic Coupling atLa0.67Sr0.33MnO3/SrRuO3Interfaces. Physical Review Letters. 109(2). 27201–27201. 30 indexed citations

8.

Pantzas, Konstantinos, Youssef El Gmili, Jeramy Ray Dickerson, et al.. (2012). Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE. Journal of Crystal Growth. 370. 57–62. 47 indexed citations

9.

Rigutti, Lorenzo, Gwénolé Jacopin, L. Largeau, et al.. (2011). GaN/AlNコアシェル・ナノワイヤの光学的性質と構造特性の相関. Physical Review B. 83(15). 1–155320. 6 indexed citations

10.

Jacopin, Gwénolé, Lorenzo Rigutti, L. Largeau, et al.. (2011). Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires. Journal of Applied Physics. 110(6). 53 indexed citations

11.

Rigutti, Lorenzo, Gwénolé Jacopin, L. Largeau, et al.. (2011). Correlation of optical and structural properties of GaN/AlN core-shell nanowires. Physical Review B. 83(15). 56 indexed citations

12.

Gautier, S., G. Patriarche, T. Moudakir, et al.. (2010). Deep structural analysis of novel BGaN material layers grown by MOVPE. Journal of Crystal Growth. 315(1). 288–291. 33 indexed citations

13.

Largeau, L., D L Dheeraj, Maria Tchernycheva, G. É. Cirlin, & Jean‐Christophe Harmand. (2008). Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111). Nanotechnology. 19(15). 155704–155704. 77 indexed citations

14.

Tchernycheva, Maria, Corinne Sartel, G. É. Cirlin, et al.. (2008). GaN/AlN free‐standing nanowires grown by molecular beam epitaxy. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1556–1558. 13 indexed citations

15.

Patriarche, G., L. Largeau, J.P. Rivière, & Éric Le Bourhis. (2005). Indentation deformation of thin {111} GaAs and InSb foils: influence of polarity. Philosophical Magazine Letters. 85(1). 1–12. 1 indexed citations

16.

Largeau, L., G. Patriarche, Frank Glas, & Éric Le Bourhis. (2004). Absolute determination of the asymmetry of the in-plane deformation of GaAs (001). Journal of Applied Physics. 95(8). 3984–3987. 10 indexed citations

17.

Bourhis, Éric Le, G. Patriarche, L. Largeau, & J.P. Rivière. (2004). Polarity-induced changes in the nanoindentation response of GaAs. Journal of materials research/Pratt's guide to venture capital sources. 19(1). 131–136. 1 indexed citations

18.

Largeau, L., G. Patriarche, Alain Rivière, J.P. Rivière, & Éric Le Bourhis. (2004). Indentation punching through thin (011) InP. Journal of Materials Science. 39(3). 943–949. 11 indexed citations

19.

Bourhis, Éric Le, G. Patriarche, L. Largeau, & J.P. Rivière. (2004). Polarity-induced changes in the nanoindentation response of GaAs. Journal of materials research/Pratt's guide to venture capital sources. 19(1). 131–136. 15 indexed citations

20.

Harmand, Jean‐Christophe, A. Caliman, E. V. K. Rao, et al.. (2002). GaNAsSb: how does it compare with other dilute III V-nitride alloys?. Semiconductor Science and Technology. 17(8). 778–784. 76 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact