A. Ramdane

479 total citations
39 papers, 356 citations indexed

About

A. Ramdane is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, A. Ramdane has authored 39 papers receiving a total of 356 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 31 papers in Atomic and Molecular Physics, and Optics and 6 papers in Condensed Matter Physics. Recurrent topics in A. Ramdane's work include Semiconductor Quantum Structures and Devices (21 papers), Photonic and Optical Devices (17 papers) and Semiconductor Lasers and Optical Devices (16 papers). A. Ramdane is often cited by papers focused on Semiconductor Quantum Structures and Devices (21 papers), Photonic and Optical Devices (17 papers) and Semiconductor Lasers and Optical Devices (16 papers). A. Ramdane collaborates with scholars based in France, United States and Ireland. A. Ramdane's co-authors include K. Merghem, F. Lelarge, A. Martinez, A. Ougazzaden, G. Patriarche, J. Landreau, G. Moreau, Guy Aubin, F. Poingt and J. Décobert and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

A. Ramdane

37 papers receiving 344 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Ramdane France 11 287 260 63 40 25 39 356
Chin‐Yao Tsai United Kingdom 9 257 0.9× 221 0.8× 45 0.7× 27 0.7× 24 1.0× 21 298
G. Pakulski Canada 14 375 1.3× 326 1.3× 80 1.3× 21 0.5× 39 1.6× 40 452
N. T. Moshegov Russia 12 232 0.8× 327 1.3× 91 1.4× 73 1.8× 37 1.5× 62 393
S. C. Wang Taiwan 9 372 1.3× 375 1.4× 49 0.8× 79 2.0× 19 0.8× 25 444
W.I. Wang United States 11 312 1.1× 313 1.2× 67 1.1× 39 1.0× 55 2.2× 42 371
I. I. Reshina Russia 10 234 0.8× 354 1.4× 123 2.0× 27 0.7× 77 3.1× 33 425
A. Girndt Germany 11 208 0.7× 309 1.2× 51 0.8× 111 2.8× 35 1.4× 18 352
A.A. Allerman United States 8 285 1.0× 245 0.9× 28 0.4× 90 2.3× 15 0.6× 20 323
Peng Huei Lim Singapore 10 273 1.0× 198 0.8× 50 0.8× 35 0.9× 64 2.6× 23 321
M. Sénès France 8 221 0.8× 382 1.5× 101 1.6× 60 1.5× 22 0.9× 20 407

Countries citing papers authored by A. Ramdane

Since Specialization
Citations

This map shows the geographic impact of A. Ramdane's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Ramdane with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Ramdane more than expected).

Fields of papers citing papers by A. Ramdane

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Ramdane. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Ramdane. The network helps show where A. Ramdane may publish in the future.

Co-authorship network of co-authors of A. Ramdane

This figure shows the co-authorship network connecting the top 25 collaborators of A. Ramdane. A scholar is included among the top collaborators of A. Ramdane based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Ramdane. A. Ramdane is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Benisty, H., et al.. (2021). Parity-time symmetric gratings in 1550  nm distributed-feedback laser diodes: insight on device design rules. Journal of the Optical Society of America B. 38(9). C168–C168. 7 indexed citations
2.
Arif, Muhammad, Suresh Sundaram, Jérémy Streque, et al.. (2015). Investigation of new approaches for InGaN growth with high indium content for CPV application. AIP conference proceedings. 1679. 40001–40001. 1 indexed citations
3.
Gautier, S., Youssef El Gmili, T. Moudakir, et al.. (2013). Nondestructive mapping of chemical composition and structural qualities of group III-nitride nanowires using submicron beam synchrotron-based X-ray diffraction. Thin Solid Films. 541. 46–50. 1 indexed citations
4.
Piwoński, T., Guillaume Huyet, J. Houlihan, et al.. (2012). Ultrafast response of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range. Applied Physics Letters. 100(7). 6 indexed citations
5.
Rudno‐Rudziński, W., K. Ryczko, G. Sęk, et al.. (2011). Carrier wavefunction control in a dilute nitride-based quantum well—a quantum dot tunnel injection system for 1.3 µm emission. Semiconductor Science and Technology. 26(8). 85004–85004. 3 indexed citations
6.
Rosales, Ricardo, K. Merghem, A. Martinez, et al.. (2011). High repetition rate two-section InAs/InP quantum-dash passively mode locked lasers. 1–4. 3 indexed citations
7.
Patriarche, G., S. Gautier, T. Moudakir, et al.. (2010). Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth. Journal of Crystal Growth. 315(1). 160–163. 30 indexed citations
8.
Martin, Julien, et al.. (2009). Selective growth of GaN nanodots and nanostripes on 6H‐SiC substrates by metal organic vapor phase epitaxy. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 3 indexed citations
9.
Akrout, Akram, K. Merghem, Jean-Philippe Tourrenc, et al.. (2009). Generation of 10 GHz Optical Pulses with Very Low Timing Jitter Using One Section Passively Mode Locked Quantum Dash Based Lasers Operating at 1.55 µm. JThA30–JThA30. 4 indexed citations
10.
Rudno‐Rudziński, W., G. Sęk, K. Ryczko, et al.. (2009). Optical properties and energy transfer in InGaAsN quantum well – InAs quantum dots tunnel injection structures for 1.3 μm emission. physica status solidi (a). 206(5). 826–829. 2 indexed citations
11.
Rudno‐Rudziński, W., G. Sęk, K. Ryczko, et al.. (2009). Room temperature free carrier tunneling in dilute nitride based quantum well - quantum dot tunnel injection system for 1.3 μm. Applied Physics Letters. 94(17). 23 indexed citations
12.
Shen, Alexandre, Akram Akrout, F. Lelarge, et al.. (2009). Injection locked Fabry-Perot laser diode for 10Gbps WDM access network applications. Asia Communications and Photonics Conference and Exhibition. 25. FJ3–FJ3.
13.
Shen, Alexandre, J.-G. Provost, Akram Akrout, et al.. (2008). Low confinement factor quantum dash (QD) mode-locked Fabry-Perot (FP) laser diode for tunable pulse generation. 1–3. 11 indexed citations
14.
Akrout, Akram, Alexandre Shen, F. Lelarge, et al.. (2008). Spectrum filtering and pulse compression of Quantum-Dash mode-locked lasers emitting at 1.55 μm. 19. 1–2. 2 indexed citations
15.
Moreau, G., K. Merghem, A. Martinez, et al.. (2007). 1516 nm room temperature CW operation of quantum dot InAs/InP(311)B singlemode laser. Electronics Letters. 43(10). 571–572. 1 indexed citations
16.
Dupuis, N., Pierre‐Yves Lagrée, J. Décobert, et al.. (2006). AlGaInAs selective area growth by LP-MOVPE: experimental characterisation and predictive modelling. IEE Proceedings - Optoelectronics. 153(6). 276–279. 8 indexed citations
17.
Dagens, B., A. Martinez, J.-G. Provost, et al.. (2006). High extinction ratio and high-temperature 2.5-Gb/s floor-free 1.3-/spl mu/m transmission with a directly modulated quantum dot laser. IEEE Photonics Technology Letters. 18(4). 589–591. 6 indexed citations
18.
Merghem, K., A. Martinez, G. Moreau, et al.. (2006). Subpicosecond pulse generation at 134GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56μm. Applied Physics Letters. 88(24). 72 indexed citations
19.
Décobert, J., N. Dupuis, Pierre‐Yves Lagrée, et al.. (2006). Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy. Journal of Crystal Growth. 298. 28–31. 28 indexed citations
20.
Eaves, L., et al.. (1984). An investigation of the 1.36 eV photoluminescence spectrum of heat-treated InP using Zeeman spectroscopy and strain effects. Journal of Physics C Solid State Physics. 17(7). 1233–1245. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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