R. M. Sieg

1.1k total citations
35 papers, 903 citations indexed

About

R. M. Sieg is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, R. M. Sieg has authored 35 papers receiving a total of 903 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 26 papers in Atomic and Molecular Physics, and Optics and 10 papers in Condensed Matter Physics. Recurrent topics in R. M. Sieg's work include Semiconductor Quantum Structures and Devices (20 papers), Semiconductor Lasers and Optical Devices (10 papers) and GaN-based semiconductor devices and materials (9 papers). R. M. Sieg is often cited by papers focused on Semiconductor Quantum Structures and Devices (20 papers), Semiconductor Lasers and Optical Devices (10 papers) and GaN-based semiconductor devices and materials (9 papers). R. M. Sieg collaborates with scholars based in United States. R. M. Sieg's co-authors include S. R. Kurtz, Andrew A. Allerman, Steven A. Ringel, E. D. Jones, Eugene A. Fitzgerald, S. M. Ting, C. H. Seager, John F. Klem, S. A. Ringel and R. N. Sacks and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Solar Energy Materials and Solar Cells.

In The Last Decade

R. M. Sieg

34 papers receiving 853 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. M. Sieg United States 13 787 780 265 189 90 35 903
Hideto Sugawara Japan 12 636 0.8× 646 0.8× 321 1.2× 61 0.3× 171 1.9× 25 787
D. Bernklau Germany 9 433 0.6× 403 0.5× 191 0.7× 90 0.5× 91 1.0× 17 503
H. Shen United States 12 552 0.7× 499 0.6× 93 0.4× 53 0.3× 110 1.2× 22 624
N. A. Maleev Russia 15 996 1.3× 993 1.3× 104 0.4× 79 0.4× 236 2.6× 83 1.1k
B. Kunert Germany 13 413 0.5× 422 0.5× 108 0.4× 100 0.5× 93 1.0× 30 514
J. Oshinowo Germany 11 768 1.0× 538 0.7× 102 0.4× 106 0.6× 324 3.6× 26 822
A. Lenz Germany 17 736 0.9× 573 0.7× 113 0.4× 196 1.0× 255 2.8× 41 834
H. Lage Germany 16 639 0.8× 347 0.4× 90 0.3× 74 0.4× 172 1.9× 36 701
A. Sacedón Spain 13 408 0.5× 324 0.4× 128 0.5× 69 0.4× 103 1.1× 38 450
R.L. Naone United States 15 530 0.7× 856 1.1× 86 0.3× 105 0.6× 265 2.9× 34 914

Countries citing papers authored by R. M. Sieg

Since Specialization
Citations

This map shows the geographic impact of R. M. Sieg's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. M. Sieg with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. M. Sieg more than expected).

Fields of papers citing papers by R. M. Sieg

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. M. Sieg. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. M. Sieg. The network helps show where R. M. Sieg may publish in the future.

Co-authorship network of co-authors of R. M. Sieg

This figure shows the co-authorship network connecting the top 25 collaborators of R. M. Sieg. A scholar is included among the top collaborators of R. M. Sieg based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. M. Sieg. R. M. Sieg is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lo, Yu‐Hwa, Yanyan Xiong, Yuanhao Zhou, et al.. (2003). Stress free wafer bonded GaAs-on-Si photonic devices and circuits. 2. 427–428. 1 indexed citations
2.
3.
Kaplar, Robert, Daewon Kwon, Steven A. Ringel, et al.. (2001). Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III–V solar cells. Solar Energy Materials and Solar Cells. 69(1). 85–91. 58 indexed citations
4.
Kurtz, S. R., R. M. Sieg, Andrew A. Allerman, Kent D. Choquette, & R.L. Naone. (2001). MOCVD-grown 1.3-μm InGaAsN multiple quantum well lasers incorporating GaAsP strain-compensation layers. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4287. 170–170. 2 indexed citations
5.
Klem, John F., A. J. Fischer, O. Blum, et al.. (2000). Room temperature continuous wave InGaAsN quantumwellvertical-cavity lasers emitting at 1.3 µm. Electronics Letters. 36(16). 1388–1390. 190 indexed citations
6.
Xiong, Yanyan, Yuanhao Zhou, Z.H. Zhu, et al.. (2000). Oxide-defined GaAs vertical-cavity surface-emitting lasers on Si substrates. IEEE Photonics Technology Letters. 12(2). 110–112. 8 indexed citations
7.
Ting, S. M., Eugene A. Fitzgerald, R. M. Sieg, & Steven A. Ringel. (1998). Range of defect morphologies on GaAs grown on offcut (001) Ge substrates. Journal of Electronic Materials. 27(5). 451–461. 18 indexed citations
8.
Sieg, R. M., John A. Carlin, John Boeckl, et al.. (1998). High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates. Applied Physics Letters. 73(21). 3111–3113. 62 indexed citations
9.
Sieg, R. M., Steven A. Ringel, S. M. Ting, Eugene A. Fitzgerald, & R. N. Sacks. (1998). Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion. Journal of Electronic Materials. 27(7). 900–907. 90 indexed citations
10.
Sieg, R. M., S. A. Ringel, S. M. Ting, et al.. (1998). Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si1−xGex/Si substrates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1471–1474. 53 indexed citations
11.
Sieg, R. M., R. N. Sacks, & Steven A. Ringel. (1997). Application of pyrometric interferometry to the in situ monitoring of In0.52Al0.48As, In0.53Ga0.47As, and quaternary alloy growth on InP substrates. Journal of Crystal Growth. 175-176. 256–261. 3 indexed citations
12.
Sieg, R. M. & S. A. Ringel. (1996). Reabsorption, band-gap narrowing, and the reconciliation of photoluminescence spectra with electrical measurements for epitaxial n-InP. Journal of Applied Physics. 80(1). 448–458. 33 indexed citations
13.
Sieg, R. M., R. N. Sacks, P. N. Grillot, & Steven A. Ringel. (1996). Improved substrate temperature stability during molecular beam epitaxy growth using indium free mounting of small substrates of various shapes. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 14(6). 3283–3287. 1 indexed citations
14.
Sieg, R. M., B. Chatterjee, & S. A. Ringel. (1995). Evidence for enhanced zinc interstitial concentration in strain-relaxed heteroepitaxial indium phosphide. Applied Physics Letters. 66(23). 3108–3110. 7 indexed citations
15.
Chatterjee, B., et al.. (1994). Hydrogen passivation of dislocations in InP on GaAs heterostructures. Applied Physics Letters. 65(1). 58–60. 30 indexed citations
16.
Sieg, R. M., et al.. (1993). Characterization of SixGe1−x/Si heterostructures for device applications using spectroscopic ellipsometry. Journal of Applied Physics. 74(1). 586–595. 9 indexed citations
17.
Sieg, R. M., et al.. (1993). Ellipsometric study of Si0.5Ge0.5/Si strained-layer superlattices. Applied Physics Letters. 62(14). 1626–1628. 8 indexed citations
18.
Alterovitz, Samuel A., et al.. (1992). Ellipsometric study of metal-organic chemically vapor deposited III–V semiconductor structures. Thin Solid Films. 220(1-2). 241–246. 3 indexed citations
19.
Alterovitz, Samuel A., et al.. (1992). New technique for oil backstreaming contamination measurements. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 10(4). 2099–2104. 1 indexed citations
20.
Alterovitz, Samuel A., et al.. (1989). Optical Dispersion Relations for “Diamondlike” Carbon Films. MRS Proceedings. 152. 21–245. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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