Zhanbo Xia

2.7k total citations
40 papers, 2.2k citations indexed

About

Zhanbo Xia is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, Zhanbo Xia has authored 40 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electronic, Optical and Magnetic Materials, 33 papers in Materials Chemistry and 10 papers in Electrical and Electronic Engineering. Recurrent topics in Zhanbo Xia's work include Ga2O3 and related materials (33 papers), ZnO doping and properties (30 papers) and Electronic and Structural Properties of Oxides (16 papers). Zhanbo Xia is often cited by papers focused on Ga2O3 and related materials (33 papers), ZnO doping and properties (30 papers) and Electronic and Structural Properties of Oxides (16 papers). Zhanbo Xia collaborates with scholars based in United States, India and Finland. Zhanbo Xia's co-authors include Siddharth Rajan, Chandan Joishi, Yuewei Zhang, Mark Brenner, Sriram Krishnamoorthy, Saurabh Lodha, Steven A. Ringel, Aaron R. Arehart, Joe F. McGlone and Sanyam Bajaj and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Zhanbo Xia

39 papers receiving 2.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Zhanbo Xia United States 23 2.1k 2.0k 949 502 380 40 2.2k
Hehe Gong China 22 1.7k 0.8× 1.5k 0.8× 874 0.9× 403 0.8× 263 0.7× 61 1.8k
Quang Tu Thieu Japan 18 1.7k 0.8× 1.6k 0.8× 836 0.9× 313 0.6× 221 0.6× 33 1.8k
Ivan Shchemerov Russia 24 1.5k 0.7× 1.4k 0.7× 891 0.9× 460 0.9× 265 0.7× 74 1.7k
Robert Schewski Germany 27 2.8k 1.3× 2.9k 1.4× 1.7k 1.7× 588 1.2× 143 0.4× 42 3.0k
Fikadu Alema United States 21 1.5k 0.7× 1.5k 0.7× 889 0.9× 305 0.6× 141 0.4× 52 1.6k
M. Baldini Germany 15 2.4k 1.2× 2.4k 1.2× 1.3k 1.4× 414 0.8× 182 0.5× 28 2.5k
Zhengwei Chen China 17 1.4k 0.7× 1.5k 0.7× 652 0.7× 533 1.1× 228 0.6× 39 1.7k
Shin Mou United States 19 1.4k 0.7× 1.6k 0.8× 804 0.8× 456 0.9× 149 0.4× 53 1.8k
Chandan Joishi United States 15 1.3k 0.6× 1.3k 0.6× 586 0.6× 309 0.6× 195 0.5× 45 1.4k
Zhaoqing Feng China 21 1.1k 0.5× 1.0k 0.5× 513 0.5× 280 0.6× 177 0.5× 36 1.2k

Countries citing papers authored by Zhanbo Xia

Since Specialization
Citations

This map shows the geographic impact of Zhanbo Xia's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zhanbo Xia with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zhanbo Xia more than expected).

Fields of papers citing papers by Zhanbo Xia

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Zhanbo Xia. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zhanbo Xia. The network helps show where Zhanbo Xia may publish in the future.

Co-authorship network of co-authors of Zhanbo Xia

This figure shows the co-authorship network connecting the top 25 collaborators of Zhanbo Xia. A scholar is included among the top collaborators of Zhanbo Xia based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Zhanbo Xia. Zhanbo Xia is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Joishi, Chandan, Sheikh Ifatur Rahman, Zhanbo Xia, Shahadat H. Sohel, & Siddharth Rajan. (2025). Selective injection AlGaN/GaN heterojunction bipolar transistors with patterned regrown base contacts. SHILAP Revista de lepidopterología. 1(2).
2.
Joishi, Chandan, et al.. (2023). Demonstration of gallium oxide nano-pillar field emitter arrays. AIP Advances. 13(7). 1 indexed citations
3.
Kalarickal, Nidhin Kurian, Andreas Fiedler, Hsien‐Lien Huang, et al.. (2021). Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux. Applied Physics Letters. 119(12). 38 indexed citations
4.
Kalarickal, Nidhin Kurian, Zhanbo Xia, Joe F. McGlone, et al.. (2020). High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer. Journal of Applied Physics. 127(21). 79 indexed citations
5.
Wang, Caiyu, Omor Shoron, Hao Yang, et al.. (2020). High-Current Perovskite Oxide BaTiO3/BaSnO3 Heterostructure Field Effect Transistors. IEEE Electron Device Letters. 41(4). 621–624. 8 indexed citations
6.
Kalarickal, Nidhin Kurian, Mohammad Wahidur Rahman, Zhanbo Xia, et al.. (2020). High-permittivity dielectric edge termination for vertical high voltage devices. Journal of Computational Electronics. 19(4). 1538–1545. 10 indexed citations
7.
Joishi, Chandan, et al.. (2020). Ultrafast Thermoreflectance Imaging and Electrothermal Modeling of β-Ga2O3 MESFETs. IEEE Electron Device Letters. 41(4). 641–644. 13 indexed citations
8.
Zhang, Yuewei, Zhanbo Xia, Joe F. McGlone, et al.. (2019). Evaluation of Low-Temperature Saturation Velocity in <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math> </inline-formula>-(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors. IEEE Transactions on Electron Devices. 66(3). 1574–1578. 71 indexed citations
9.
Xia, Zhanbo, Hao Xue, Chandan Joishi, et al.. (2019). $\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz. IEEE Electron Device Letters. 40(7). 1052–1055. 125 indexed citations
10.
Kalarickal, Nidhin Kurian, Zhanbo Xia, Joe F. McGlone, et al.. (2019). Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3. Applied Physics Letters. 115(15). 46 indexed citations
11.
Joishi, Chandan, Yuewei Zhang, Zhanbo Xia, et al.. (2019). Breakdown Characteristics of $\beta$ -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors. IEEE Electron Device Letters. 40(8). 1241–1244. 86 indexed citations
12.
McGlone, Joe F., Zhanbo Xia, Chandan Joishi, et al.. (2019). Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs. Applied Physics Letters. 115(15). 47 indexed citations
13.
Xue, Hao, Towhidur Razzak, Zhanbo Xia, et al.. (2019). All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors. Solid-State Electronics. 164. 107696–107696. 22 indexed citations
14.
Joishi, Chandan, Zhanbo Xia, Joe F. McGlone, et al.. (2018). Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors. Applied Physics Letters. 113(12). 50 indexed citations
15.
McGlone, Joe F., Zhanbo Xia, Yuewei Zhang, et al.. (2018). Trapping Effects in Si -Doped -Ga2O3 MESFETs on an Fe-Doped -Ga2O3 Substrate. IEEE Electron Device Letters. 39(7). 1042–1045. 88 indexed citations
16.
Pratiyush, Anamika Singh, Zhanbo Xia, Sandeep Kumar, et al.. (2018). MBE-Grown <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math> </inline-formula>-Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio ~107. IEEE Photonics Technology Letters. 30(23). 2025–2028. 71 indexed citations
17.
Zhang, Yuewei, Zhanbo Xia, Chandan Joishi, & Siddharth Rajan. (2018). Design and Demonstration of (AlxGal-x)2O3/Ga2O3Double Heterostructure Field Effect Transistor (DHFET). 1–2. 4 indexed citations
18.
Pratiyush, Anamika Singh, Sriram Krishnamoorthy, Sandeep Kumar, et al.. (2018). Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector. Japanese Journal of Applied Physics. 57(6). 60313–60313. 75 indexed citations
19.
Zhang, Yuewei, Chandan Joishi, Zhanbo Xia, et al.. (2018). Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors. Applied Physics Letters. 112(23). 138 indexed citations
20.
Du, Yanhui, et al.. (2008). Influence of the oxidative annealing temperature on the magnetism of (Mn, N)-codoped ZnO thin films. Journal of Applied Physics. 104(3). 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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