Zhanbo Xia

2.7k citations

40 papers · 2.2k · h-index 23

Impact in

Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials
Renewable Energy, Sustainability and the Environment top 2%
- Advanced Photocatalysis Techniques

Papers in

Electronic, Optical and Magnetic Materials 33
- Ga2O3 and related materials 33
Materials Chemistry 33
- ZnO doping and properties 30
- Electronic and Structural Properties of Oxides 16

Co-authors: Siddharth Rajan (38 shared papers)Chandan Joishi (18 shared papers)Yuewei Zhang (12 shared papers)Mark Brenner (8 shared papers)Sriram Krishnamoorthy (7 shared papers)Saurabh Lodha (9 shared papers)Steven A. Ringel (9 shared papers)Aaron R. Arehart (9 shared papers)
Journals: Applied Physics Letters (9 papers)IEEE Electron Device Letters (7 papers)Journal of Applied Physics (3 papers)IEEE Transactions on Electron Devices (3 papers)Applied Physics Express (3 papers)
Partner nations: United States India Finland

In The Last Decade

Zhanbo Xia

39 papers receiving 2.2k citations

Peers

Countries citing papers authored by Zhanbo Xia

Since Specialization

Citations

This map shows the geographic impact of Zhanbo Xia's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zhanbo Xia with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zhanbo Xia more than expected).

Fields of papers citing papers by Zhanbo Xia

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Zhanbo Xia. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zhanbo Xia. The network helps show where Zhanbo Xia may publish in the future.

Co-authors

The 25 scholars most cited alongside Zhanbo Xia, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Zhanbo Xia Line = papers co-authored together Zhanbo Xia links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 40 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures Applied Physics Letters ·Yuewei Zhang, Adam T. Neal, Zhanbo Xia, Chandan Joishi, Jared M. Johnson, Yuanhua Zheng, Sanyam Bajaj, Mark Brenner, Donald L. Dorsey, Kelson D. Chabak, Gregg H. Jessen, Jinwoo Hwang, Shin Mou, Joseph P. Heremans, Siddharth Rajan	2018	281
2	High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector Applied Physics Letters ·Anamika Singh Pratiyush, Sriram Krishnamoorthy, Swanand V. Solanke, Zhanbo Xia, R. Muralidharan, Siddharth Rajan, Digbijoy N. Nath	2017	226
3	Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors Applied Physics Letters ·Yuewei Zhang, Chandan Joishi, Zhanbo Xia, Mark Brenner, Saurabh Lodha, Siddharth Rajan	2018	138
4	$\beta$ -Ga₂O₃ Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz IEEE Electron Device Letters ·Zhanbo Xia, Hao Xue, Chandan Joishi, Joe F. McGlone, Nidhin Kurian Kalarickal, Shahadat H. Sohel, Mark Brenner, Aaron R. Arehart, Steven A. Ringel, Saurabh Lodha, Wu Lu, Siddharth Rajan	2019	125
5	Low-pressure CVD-grown β-Ga₂O₃bevel-field-plated Schottky barrier diodes Applied Physics Express ·Chandan Joishi, Subrina Rafique, Zhanbo Xia, Lu Han, Sriram Krishnamoorthy, Yuewei Zhang, Saurabh Lodha, Hongping Zhao, Siddharth Rajan	2018	124
6	Delta-doped β-gallium oxide field-effect transistor Applied Physics Express ·Sriram Krishnamoorthy, Zhanbo Xia, Sanyam Bajaj, Mark Brenner, Siddharth Rajan	2017	116
7	Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts IEEE Electron Device Letters ·Zhanbo Xia, Chandan Joishi, Sriram Krishnamoorthy, Sanyam Bajaj, Yuewei Zhang, Mark Brenner, Saurabh Lodha, Siddharth Rajan	2018	113
8	Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga₂O₃ physica status solidi (RRL) - Rapid Research Letters ·Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia, Wyatt Moore, Zhaoying Chen, Joe F. McGlone, David R. Daughton, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan, Hongping Zhao	2020	102
9	Trapping Effects in Si -Doped -Ga₂O₃ MESFETs on an Fe-Doped -Ga₂O₃ Substrate IEEE Electron Device Letters ·Joe F. McGlone, Zhanbo Xia, Yuewei Zhang, Chandan Joishi, Saurabh Lodha, Siddharth Rajan, Steven A. Ringel, Aaron R. Arehart	2018	88
10	Breakdown Characteristics of $\beta$ -(Al_0.22Ga_0.78)₂O₃/Ga₂O₃ Field-Plated Modulation-Doped Field-Effect Transistors IEEE Electron Device Letters ·Chandan Joishi, Yuewei Zhang, Zhanbo Xia, Wenyuan Sun, Aaron R. Arehart, Steven A. Ringel, Saurabh Lodha, Siddharth Rajan	2019	86
11	High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer Journal of Applied Physics ·Nidhin Kurian Kalarickal, Zhanbo Xia, Joe F. McGlone, Yumo Liu, Wyatt Moore, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan	2020	79
12	Demonstration of zero bias responsivity in MBE grown β-Ga₂O₃ lateral deep-UV photodetector Japanese Journal of Applied Physics ·Anamika Singh Pratiyush, Sriram Krishnamoorthy, Sandeep Kumar, Zhanbo Xia, R. Muralidharan, Siddharth Rajan, Digbijoy N. Nath	2018	75
13	β-(Al_0.18Ga_0.82)₂O₃/Ga₂O₃ Double Heterojunction Transistor With Average Field of 5.5 MV/cm IEEE Electron Device Letters ·Nidhin Kurian Kalarickal, Zhanbo Xia, Hsien‐Lien Huang, Wyatt Moore, Yumo Liu, Mark Brenner, Jinwoo Hwang, Siddharth Rajan	2021	73
14	MBE-Grown <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math> </inline-formula>-Ga₂O₃-Based Schottky UV-C Photodetectors With Rectification Ratio ~10⁷ IEEE Photonics Technology Letters ·Anamika Singh Pratiyush, Zhanbo Xia, Sandeep Kumar, Yuewei Zhang, Chandan Joishi, R. Muralidharan, Siddharth Rajan, Digbijoy N. Nath	2018	71
15	Evaluation of Low-Temperature Saturation Velocity in <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math> </inline-formula>-(Al_xGa_1–x)₂O₃/Ga₂O₃ Modulation-Doped Field-Effect Transistors IEEE Transactions on Electron Devices ·Yuewei Zhang, Zhanbo Xia, Joe F. McGlone, Wenyuan Sun, Chandan Joishi, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan	2019	71
16	Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors Applied Physics Letters ·Chandan Joishi, Zhanbo Xia, Joe F. McGlone, Yuewei Zhang, Aaron R. Arehart, Steven A. Ringel, Saurabh Lodha, Siddharth Rajan	2018	50
17	Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs Applied Physics Letters ·Joe F. McGlone, Zhanbo Xia, Chandan Joishi, Saurabh Lodha, Siddharth Rajan, Steven A. Ringel, Aaron R. Arehart	2019	47
18	Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3 Applied Physics Letters ·Nidhin Kurian Kalarickal, Zhanbo Xia, Joe F. McGlone, Sriram Krishnamoorthy, Wyatt Moore, Mark Brenner, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan	2019	46
19	Electro-thermal co-design of β -(AlxGa1-x)2O3/Ga2O3 modulation doped field effect transistors Applied Physics Letters ·Bikramjit Chatterjee, Yiwen Song, James Spencer Lundh, Yuewei Zhang, Zhanbo Xia, Zahabul Islam, Jacob H. Leach, Craig D. McGray, Praneeth Ranga, Sriram Krishnamoorthy, Aman Haque, Siddharth Rajan, Sukwon Choi	2020	40
20	Design of Transistors Using High-Permittivity Materials IEEE Transactions on Electron Devices ·Zhanbo Xia, Caiyu Wang, Nidhin Kurian Kalarickal, Susanne Stemmer, Siddharth Rajan	2019	40

About Zhanbo Xia

Zhanbo Xia is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry, Electrical and Electronic Engineering, Renewable Energy, Sustainability and the Environment and Condensed Matter Physics, having authored 40 papers that have together received 2.2k indexed citations. Recurring topics across this work include Ga2O3 and related materials (33 papers), ZnO doping and properties (30 papers), Electronic and Structural Properties of Oxides (16 papers), Advanced Photocatalysis Techniques (10 papers), GaN-based semiconductor devices and materials (8 papers), Semiconductor materials and devices (7 papers), Silicon Carbide Semiconductor Technologies (3 papers) and Semiconductor Quantum Structures and Devices (2 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (2.1k citations), Renewable Energy, Sustainability and the Environment (949 citations), Materials Chemistry (2.0k citations), Condensed Matter Physics (380 citations) and Electrical and Electronic Engineering (502 citations). Zhanbo Xia has collaborated with scholars based in United States, India and Finland. Frequent co-authors include Siddharth Rajan, Chandan Joishi, Yuewei Zhang, Mark Brenner, Sriram Krishnamoorthy, Saurabh Lodha, Steven A. Ringel, Aaron R. Arehart, Joe F. McGlone and Sanyam Bajaj. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Journal of Applied Physics, IEEE Transactions on Electron Devices and Applied Physics Express.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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