Esmat Farzana

1.5k total citations
32 papers, 1.2k citations indexed

About

Esmat Farzana is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, Esmat Farzana has authored 32 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electronic, Optical and Magnetic Materials, 19 papers in Materials Chemistry and 12 papers in Electrical and Electronic Engineering. Recurrent topics in Esmat Farzana's work include Ga2O3 and related materials (23 papers), ZnO doping and properties (16 papers) and Advanced Photocatalysis Techniques (9 papers). Esmat Farzana is often cited by papers focused on Ga2O3 and related materials (23 papers), ZnO doping and properties (16 papers) and Advanced Photocatalysis Techniques (9 papers). Esmat Farzana collaborates with scholars based in United States, Bangladesh and Japan. Esmat Farzana's co-authors include Aaron R. Arehart, Steven A. Ringel, Z. Zhang, James S. Speck, Zeng Zhang, Pran K. Paul, Thomas E. Blue, Syed Moshfeq Salaken, Jiban Podder and Elaheh Ahmadi and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Esmat Farzana

30 papers receiving 1.2k citations

Peers

Countries citing papers authored by Esmat Farzana

Since Specialization

Citations

This map shows the geographic impact of Esmat Farzana's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Esmat Farzana with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Esmat Farzana more than expected).

Fields of papers citing papers by Esmat Farzana

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Esmat Farzana. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Esmat Farzana. The network helps show where Esmat Farzana may publish in the future.

Co-authorship network of co-authors of Esmat Farzana

This figure shows the co-authorship network connecting the top 25 collaborators of Esmat Farzana. A scholar is included among the top collaborators of Esmat Farzana based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Esmat Farzana. Esmat Farzana is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Effects of Epitaxial Layer Thickness on Heavy Ion-Induced Single-Event Burnout in Vertical β-Ga₂O₃ Schottky Barrier Diodes 2025 ·IEEE Transactions on Nuclear Science ·(unknown), (unknown), Esmat Farzana, Dennis R. Ball, (unknown), Andrew L. Sternberg, Robert A. Reed, Sokrates T. Pantelides, Arthur F. Witulski, James S. Speck, Daniel M. Fleetwood, Ronald D. Schrimpf	2
2	Electro-thermal co-design of vertical β-Ga2O3 Schottky diodes with high-permittivity BaTiO3 field-plate for high-field and thermal management 2025 ·SHILAP Revista de lepidopterología ·(unknown), (unknown), (unknown), Jingjing Shi, Esmat Farzana	0
3	Single-Event Burnout in Vertical β-Ga₂O₃ Diodes With Pt/PtOₓ Schottky Contacts and High-k Field-Plate Dielectrics 2024 ·IEEE Transactions on Nuclear Science ·(unknown), (unknown), Esmat Farzana, Dennis R. Ball, (unknown), Nolan S. Hendricks, Arkka Bhattacharyya, Robert A. Reed, En Xia Zhang, James S. Speck, Daniel M. Fleetwood, Ronald D. Schrimpf	19
4	Vertical metal–dielectric–semiconductor diode on (001) β-Ga₂O₃ with high-κ TiO₂ interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown 2023 ·Applied Physics Express ·Nolan S. Hendricks, Esmat Farzana, Ahmad E. Islam, Kevin Leedy, Kyle J. Liddy, (unknown), Daniel M. Dryden, (unknown), James S. Speck, Kelson D. Chabak, Andrew J. Green	17
5	Indium as a surfactant: Effects on growth morphology and background impurity in GaN films grown by ammonia-assisted molecular beam epitaxy 2022 ·APL Materials ·(unknown), Esmat Farzana, (unknown), Morteza Monavarian, Tom Mates, James S. Speck	4
6	Impact of growth parameters on the background doping of GaN films grown by ammonia and plasma-assisted molecular beam epitaxy for high-voltage vertical power switches 2021 ·APL Materials ·(unknown), (unknown), Esmat Farzana, (unknown), Morteza Monavarian, (unknown), Tom Mates, James S. Speck	3
7	Over 1 kV Vertical GaN-on-GaN p-n Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy 2020 ·IEEE Electron Device Letters ·Esmat Farzana, (unknown), Morteza Monavarian, Takeki Itoh, (unknown), (unknown), (unknown), James S. Speck	12
8	Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition 2020 ·APL Materials ·Hemant Ghadi, Joe F. McGlone, Christine M. Jackson, Esmat Farzana, Zixuan Feng, A F M Anhar Uddin Bhuiyan, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel	67
9	Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy 2019 ·APL Materials ·Esmat Farzana, Akhil Mauze, Joel B. Varley, Thomas E. Blue, James S. Speck, Aaron R. Arehart, Steven A. Ringel	44
10	Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β−Ga2O3 2019 ·Physical Review X ·Jared M. Johnson, Zhen Chen, Joel B. Varley, Christine M. Jackson, Esmat Farzana, Zeng Zhang, Aaron R. Arehart, Hsien‐Lien Huang, Arda Genç, Steven A. Ringel, Chris G. Van de Walle, David A. Muller, Jinwoo Hwang	85
11	Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy 2018 ·Journal of Applied Physics ·Esmat Farzana, Elaheh Ahmadi, James S. Speck, Aaron R. Arehart, Steven A. Ringel	108
12	Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3 2018 ·APL Materials ·Esmat Farzana, (unknown), Thomas E. Blue, Aaron R. Arehart, Steven A. Ringel	105
13	Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies 2018 ·Journal of Applied Physics ·Esmat Farzana, (unknown), Christine M. Jackson, Towhidur Razzak, Z. Zhang, James S. Speck, Aaron R. Arehart, Steven A. Ringel	3
14	Influence of metal choice on (010) β-Ga2O3 Schottky diode properties 2017 ·Applied Physics Letters ·Esmat Farzana, Zeng Zhang, Pran K. Paul, Aaron R. Arehart, Steven A. Ringel	172
15	Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy 2016 ·Applied Physics Letters ·Z. Zhang, Esmat Farzana, Aaron R. Arehart, Steven A. Ringel	250
16	Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN 2015 ·Journal of Applied Physics ·Z. Zhang, Esmat Farzana, (unknown), (unknown), En Xia Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf, Brian M. McSkimming, Erin C. H. Kyle, James S. Speck, Aaron R. Arehart, S. A. Ringel	25
17	Performance Analysis of Impurity Photovoltaic Effect in Solar Cells 2013 ·International Journal of Applied Physics and Mathematics ·(unknown), Esmat Farzana	1
18	Performance Analysis of Dg Mosfets With High-K Stack On Top & Bottom Gate 2012 ·International journal of scientific and technology research ·(unknown), (unknown), (unknown), Esmat Farzana	3
19	Analysis of temperature and wave function penetration effects in nanoscale double-gate MOSFETs 2012 ·Applied Nanoscience ·Esmat Farzana, Shihabur Rahman Chowdhury, (unknown), Md. Ziaur Rahman Khan	5
20	Adaptive bilateral filtering for despeckling of medical ultrasound images 2010 ·Esmat Farzana, (unknown), (unknown), M. I. H. Bhuiyan, Syed Md. Minhaz Hossain	20

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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