Mark Brenner

2.3k total citations · 1 hit paper
21 papers, 1.9k citations indexed

About

Mark Brenner is a scholar working on Materials Chemistry, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Mark Brenner has authored 21 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Materials Chemistry, 11 papers in Electronic, Optical and Magnetic Materials and 10 papers in Electrical and Electronic Engineering. Recurrent topics in Mark Brenner's work include Ga2O3 and related materials (11 papers), ZnO doping and properties (10 papers) and Semiconductor Quantum Structures and Devices (6 papers). Mark Brenner is often cited by papers focused on Ga2O3 and related materials (11 papers), ZnO doping and properties (10 papers) and Semiconductor Quantum Structures and Devices (6 papers). Mark Brenner collaborates with scholars based in United States and India. Mark Brenner's co-authors include Siddharth Rajan, Zhanbo Xia, Chandan Joishi, Roland Kawakami, Dante J. O’Hara, Choong Hee Lee, Sanyam Bajaj, Yuewei Zhang, Tiancong Zhu and Yunqiu Kelly Luo and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Mark Brenner

20 papers receiving 1.9k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit

2018 606 citations Dante J. O’Hara, Tiancong Zhu et al. Nano Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Mark Brenner United States	13	1.5k	1.2k	646	449	381	21	1.9k
E. Amzallag France	15	1.1k 0.7×	721 0.6×	525 0.8×	305 0.7×	232 0.6×	38	1.4k
Horacio Coy Diaz United States	12	2.0k 1.3×	556 0.5×	710 1.1×	161 0.4×	466 1.2×	12	2.2k
Jinghua Liang China	23	1.3k 0.9×	551 0.5×	417 0.6×	54 0.1×	647 1.7×	43	1.7k
Lídia C. Gomes Singapore	16	1.6k 1.0×	231 0.2×	803 1.2×	65 0.1×	757 2.0×	24	2.0k
Guangbiao Zhang China	20	833 0.5×	472 0.4×	375 0.6×	50 0.1×	223 0.6×	57	1.0k
Subrina Rafique United States	15	1.1k 0.7×	1.2k 1.0×	397 0.6×	646 1.4×	141 0.4×	27	1.4k
Ivan Shchemerov Russia	24	1.4k 0.9×	1.5k 1.3×	460 0.7×	891 2.0×	89 0.2×	74	1.7k
P. Tenaud France	21	838 0.5×	1.6k 1.3×	217 0.3×	116 0.3×	691 1.8×	39	1.7k
Huaxing Jiang Hong Kong	21	533 0.3×	809 0.7×	709 1.1×	173 0.4×	177 0.5×	56	1.3k

Countries citing papers authored by Mark Brenner

Since Specialization

Citations

This map shows the geographic impact of Mark Brenner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mark Brenner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mark Brenner more than expected).

Fields of papers citing papers by Mark Brenner

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mark Brenner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mark Brenner. The network helps show where Mark Brenner may publish in the future.

Co-authorship network of co-authors of Mark Brenner

This figure shows the co-authorship network connecting the top 25 collaborators of Mark Brenner. A scholar is included among the top collaborators of Mark Brenner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Mark Brenner. Mark Brenner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Kalarickal, Nidhin Kurian, et al.. (2023). Demonstration of self-aligned β-Ga2O3 δ-doped MOSFETs with current density >550 mA/mm. Applied Physics Letters. 122(11). 9 indexed citations

McGlone, Joe F., Nidhin Kurian Kalarickal, Hsien‐Lien Huang, et al.. (2022). β -Ga2O3 MESFETs with insulating Mg-doped buffer grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 121(11). 11 indexed citations

Kalarickal, Nidhin Kurian, Andreas Fiedler, Hsien‐Lien Huang, et al.. (2021). Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux. Applied Physics Letters. 119(12). 38 indexed citations

Xia, Zhanbo, Hao Xue, Chandan Joishi, et al.. (2019). $\beta$ -Ga₂O₃ Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz. IEEE Electron Device Letters. 40(7). 1052–1055. 125 indexed citations

Kalarickal, Nidhin Kurian, Zhanbo Xia, Joe F. McGlone, et al.. (2019). Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3. Applied Physics Letters. 115(15). 46 indexed citations

Zhang, Yuewei, Chandan Joishi, Zhanbo Xia, et al.. (2018). Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors. Applied Physics Letters. 112(23). 138 indexed citations

Zhang, Yuewei, Adam T. Neal, Zhanbo Xia, et al.. (2018). Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures. Applied Physics Letters. 112(17). 281 indexed citations

O’Hara, Dante J., Tiancong Zhu, Amanda H. Trout, et al.. (2018). Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit. Nano Letters. 18(5). 3125–3131. 606 indexed citations breakdown →

Xia, Zhanbo, Chandan Joishi, Sriram Krishnamoorthy, et al.. (2018). Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts. IEEE Electron Device Letters. 39(4). 568–571. 113 indexed citations

10.

Lee, Choong Hee, Sriram Krishnamoorthy, Pran K. Paul, et al.. (2017). Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy. Applied Physics Letters. 111(20). 10 indexed citations

11.

Krishnamoorthy, Sriram, Zhanbo Xia, Sanyam Bajaj, Mark Brenner, & Siddharth Rajan. (2017). Delta-doped β-gallium oxide field-effect transistor. Applied Physics Express. 10(5). 51102–51102. 116 indexed citations

12.

Lee, Choong Hee, Sriram Krishnamoorthy, Dante J. O’Hara, et al.. (2017). Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates. Journal of Applied Physics. 121(9). 63 indexed citations

13.

Carlin, Andrew M., Tyler J. Grassman, Mark Brenner, et al.. (2012). Lattice-matched GaP/SiGe virtual substrates for low-dislocation density GaInP/GaAsP/Si solar cells. 918–921. 2 indexed citations

14.

Grandal, J., Tyler J. Grassman, Andrew M. Carlin, et al.. (2012). Growth and characterization of InGaAs quantum dots on metamorphic GaAsP templates by molecular beam epitaxy. 310. 1783–1787.

15.

Grassman, Tyler J., Mark Brenner, Andrew M. Carlin, et al.. (2010). Characterization of Metamorphic GaAsP/Si Materials and Devices for Photovoltaic Applications. IEEE Transactions on Electron Devices. 57(12). 3361–3369. 88 indexed citations

16.

Arehart, Aaron R., et al.. (2010). Traps in AlGaInP materials and devices lattice matched to GaAs for multi-junction solar cells. 1999–2001. 12 indexed citations

17.

Warner, Jeffrey H., Scott R. Messenger, Robert Walters, S. A. Ringel, & Mark Brenner. (2009). A deep level transient spectroscopy study of electron and proton irradiated p<sup>+</sup>n GaAs diodes. 282–285. 1 indexed citations

18.

Grassman, Tyler J., Mark Brenner, S. Rajagopalan, et al.. (2009). Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy. Applied Physics Letters. 94(23). 128 indexed citations

19.

Grassman, Tyler J., Mark Brenner, Andrew M. Carlin, et al.. (2009). Toward metamorphic multijunction GaAsP/Si photovoltaics grown on optimized GaP/Si virtual substrates using anion-graded GaAs<inf>y</inf>P<inf>1-y</inf> buffers. 2016–2021. 12 indexed citations

20.

Hudait, Mantu K., Mark Brenner, & Steven A. Ringel. (2008). Metamorphic In0.7Al0.3As/In0.69Ga0.31As thermophotovoltaic devices grown on graded InAsyP1−y buffers by molecular beam epitaxy. Solid-State Electronics. 53(1). 102–106. 17 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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